Infineon Technologies IRFR3910PBF
- Part No.:
- IRFR3910PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR3910PBF.pdf
- Description:
- MOSFET N-CH 100V 16A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,468
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR3910PBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 48 A N-channel enhancement-mode MOSFET in DPAK package, optimized for high-efficiency DC-DC conversion and motor control with RDS(on) = 15 mΩ at VGS = 10 V. It operates with 10 V gate drive and supports continuous drain current up to 48 A at TC = 25 °C.
For engineers reviewing the IRFR3910PBF datasheet, IRFR3910PBF pinout, IRFR3910PBF application, or IRFR3910PBF equivalent, key selection criteria include its low RDS(on), fast switching speed (trise = 25 ns, tfall = 15 ns), SOA-rated avalanche capability, and suitability for synchronous rectification and half-bridge topologies.
Technical Context
This MOSFET employs planar stripe silicon technology with optimized channel geometry for reduced conduction and switching losses. Its gate charge Qg = 42 nC and input capacitance Ciss = 1725 pF enable efficient 10 V gate driving in high-frequency power stages.
The device features 100% UIS-tested avalanche ruggedness (EAS = 140 mJ), integral body diode with trr = 55 ns and Qrr = 55 nC, and is qualified per JEDEC JESD47 for industrial temperature operation (–55 °C to +175 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage in high-side switch or freewheeling position |
| RDS(on) @ VGS = 10 V | 15 mΩ - enables <1.5 W conduction loss at 40 A in TO-252 layout |
| ID (continuous) | 48 A @ TC = 25 °C - supports high-current motor phase legs and DC-DC primary switches |
| Qg | 42 nC - determines gate driver power requirement and switching transition time |
| EAS | 140 mJ - ensures reliable operation under inductive load turn-off stress without external snubbers |
| trr | 55 ns - limits reverse recovery loss in synchronous rectifier applications |
Pinout & Package
IRFR3910PBF uses the surface-mount DPAK (TO-252AA) package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives 10 V logic-level signal to fully enhance channel; requires <42 nC charge for full turn-on |
| Drain (D) | High-side or output node | Connected to PCB copper pour for heat dissipation; electrically tied to exposed metal tab |
| Source (S) | Reference/return path | Serves as local ground reference for gate drive; routed with low-inductance trace in half-bridge layout |
Key Features
| Feature | Design Value |
|---|---|
| Lead-free (Pb-free) construction | Complies with RoHS Directive 2011/65/EU; no lead in die attach, plating, or molding compound |
| 100% avalanche rated | Guarantees single-pulse energy handling up to 140 mJ without failure under inductive switching |
| Fast body diode | Reverse recovery time 55 ns and Qrr = 55 nC reduce switching loss in synchronous rectification |
| Low gate charge | 42 nC total gate charge minimizes driver IC loading and improves efficiency above 100 kHz |
Applications
| Brushless DC Motor Drive | Server VRM High-Side Switch |
|---|---|
Use Scenario: Three-phase inverter stage powering 24–48 V BLDC fans and pumps in data center cooling systems. IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation; conducts 30–45 A peak current with <15 mΩ on-resistance. Use Value: Enables >96% efficiency at 30 A due to low RDS(on) and fast tfall = 15 ns, reducing thermal derating needs. | Use Scenario: High-side synchronous rectifier in multiphase buck converters delivering 12 V → 1.2 V at >200 A for CPU/GPU VRMs. IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz with 10 V gate drive from integrated controller. Use Value: Low Qg and Ciss allow clean 10 V gate transitions, minimizing shoot-through risk and improving transient response. |
| Industrial PLC Output Stage | Automotive Body Control Module |
Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules driving solenoids and valves. IC Role / Device Role / Timing Role: Load switch with integrated avalanche protection; handles 60 V inductive kickback without external clamping. Use Value: Eliminates need for external TVS or flyback diode, reducing BOM count and PCB area by 30%. | Use Scenario: Window lift, seat actuator, and mirror control circuits in 12 V automotive body electronics. IC Role / Device Role / Timing Role: Half-bridge leg switch rated for 175 °C junction temperature and AEC-Q101 stress testing. Use Value: Supports extended ambient temperatures up to 125 °C without derating, meeting OEM thermal requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3910PBF | Same die, but in smaller I-Pak (TO-220AB) package; higher RDS(on) = 18 mΩ at 10 V | Limited to lower-power applications due to reduced thermal mass and higher junction-to-case resistance | Select when board space allows TO-220 mounting and thermal design accommodates +20% conduction loss |
| STP36NF06L | 60 V, 36 A, RDS(on) = 18 mΩ; logic-level gate (2.5 V threshold), higher Qg = 65 nC | Better low-voltage drive compatibility but slower switching and higher driver power demand | Prefer where microcontroller GPIO directly drives gate without level-shifting, and switching frequency <100 kHz |
Compared with IRLR3910PBF and STP36NF06L, IRFR3910PBF delivers the lowest RDS(on) in DPAK form factor and optimal Qg/RDS(on) ratio for high-frequency, high-current industrial switching-making it preferred for space-constrained, thermally demanding designs.
Availability
IRFR3910PBF is available at Aetrix Electronics and suitable for brushless DC motor drives, server VRM power stages, and industrial PLC output modules requiring stable component supply across multi-year production cycles.
Supply support for IRFR3910PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and maintains its power MOSFET product lines with full technical documentation and qualification compliance.
The StrongIRFET™ family-including IRFR3910PBF-is engineered for high-reliability industrial and computing power conversion, emphasizing low RDS(on), robust avalanche rating, and surface-mount thermal performance.
FAQ
Is IRFR3910PBF suitable for 5 V gate drive applications?
No. IRFR3910PBF has a gate threshold voltage VGS(th) of 2.0–4.0 V and is specified for full enhancement at VGS = 10 V. At 5 V, RDS(on) rises significantly (>60 mΩ), increasing conduction loss and thermal stress. Use logic-level alternatives like IRLR3910PBF only if gate drive voltage is constrained.
What is the maximum allowable PCB copper area for the drain pad in DPAK layout?
The recommended minimum copper area for the exposed drain pad is 100 mm² (10 mm × 10 mm) with ≥2 oz copper and 4 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) to inner ground plane. This achieves θJA ≈ 50 °C/W in standard 4-layer board conditions.
Does IRFR3910PBF have integrated ESD protection on the gate?
No. IRFR3910PBF does not include on-die ESD protection structures. Gate oxide is rated for ±30 V HBM per JEDEC JESD22-A114. External gate resistors (≥10 Ω) and transient suppression (e.g., 12 V Zener to source) are required during handling and in-circuit operation.
Can IRFR3910PBF replace IRFR3710 in an existing design?
Yes, with verification. IRFR3710 is a 100 V, 57 A MOSFET with RDS(on) = 23 mΩ. IRFR3910PBF offers lower RDS(on) and faster switching but reduced VDS rating. Replacement is valid only if system max VDS stays below 60 V and peak current remains ≤48 A; layout thermal validation is mandatory.
IRFR3910PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR3910PBF FAQ
1.How can I place an order for IRFR3910PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR3910PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR3910PBF reliable?
The price and inventory of IRFR3910PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3910PBF is usually 5 days.
3.What payment methods are accepted for IRFR3910PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3910PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR3910PBF?
IRFR3910PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR3910PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR3910PBF?
For technical support, including IRFR3910PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3910PBF requirements.
6.How does Aetrix verify that IRFR3910PBF is sourced from the original manufacturer or authorized distributors?
All IRFR3910PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3910PBF meets industry standards.
7.What is the process for return or replacement of IRFR3910PBF?
All IRFR3910PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3910PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR3910PBF part is unused and in its original packaging.
Return procedure for IRFR3910PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR3910PBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

