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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3911TRPBF

Name: IRFR3911TRPBF
Brand: Infineon Technologies
SKU: IRFR3911TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3911TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3911TRPBF.pdf

Description:: MOSFET N-CH 100V 14A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3911TRPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 14A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, featuring 0.115Ω R_DS(on) at V_GS = 10V, 7.1 V/ns dv/dt rating, and 68 mJ single-pulse avalanche energy - optimized for high-frequency DC-DC converters and SMPS primary-side switching.

For engineers reviewing the IRFR3911TRPBF datasheet, IRFR3911TRPBF pinout, IRFR3911TRPBF application, or IRFR3911TRPBF equivalent, key selection criteria include its low gate charge (21–32 nC), fully characterized C_oss (110–700 pF across voltage range), body diode reverse recovery time (86 ns), and thermal resistance (R_θJC = 2.7°C/W), critical for hard-switched flyback and synchronous rectification designs.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted edge termination to achieve stable 100V breakdown (V_(BR)DSS) and low temperature coefficient (0.11 V/°C). Its gate threshold voltage (2.0–4.0 V) ensures robust noise immunity in industrial control environments.

The MOSFET integrates a co-packaged body diode with V_SD = 1.3 V at 8.4 A and Q_rr = 290 nC, enabling predictable snubberless operation in discontinuous conduction mode (DCM) topologies. Dynamic parameters - including t_d(on) = 7.9 ns, t_f = 25 ns, and C_iss = 740 pF - are fully characterized per AN1001 for accurate loss modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; supports 48V input systems with 2× safety margin.
R_DS(on) max	0.115 Ω @ V_GS = 10V, I_D = 8.4A - Determines conduction loss in continuous current paths; enables <1.3 W dissipation at 14A.
Q_g	21–32 nC - Total gate charge defining driver strength requirement; impacts switching speed and gate drive loss.
E_AS	68 mJ - Single-pulse avalanche energy rating; allows safe operation under inductive turn-off stress without external clamping.
C_oss eff.	130 pF - Effective output capacitance from 0–80V; used directly in resonant timing and soft-switching design calculations.
t_rr	86 ns - Body diode reverse recovery time; constrains maximum operating frequency in synchronous rectifier configurations.
R_θJC	2.7 °C/W - Junction-to-case thermal resistance; defines heatsink interface requirement for 56 W power dissipation at T_C = 25°C.

Pinout & Package

IRFR3911TRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement and mechanical stability. The package features gull-wing leads compatible with standard reflow profiles and IPC-7351B land patterns.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±20 V bias; Miller charge (Q_gd = 6.6–9.9 nC) dominates switching transitions.
2 (S)	Source	Reference node for gate drive and current sensing; connects to power ground plane with low-inductance layout.
3 (D)	Drain	Main power terminal; electrically tied to exposed copper pad on bottom; carries full load current and dissipates heat into PCB copper.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	6.6–9.9 nC - Reduces Miller-induced switching delay and improves controllability during hard commutation.
Fully characterized C_oss vs. V_DS	110–700 pF range - Enables precise calculation of resonant tank behavior and ZVS boundary conditions.
Avalanche-rated construction	68 mJ E_AS, 8.4 A I_AR - Eliminates need for external RCD snubbers in flyback and forward converter primary switches.
Lead-free (PbF) compliant	RoHS-compliant finish with soldering tolerance up to 300°C for 10 s - Supports lead-free manufacturing without derating.
High dv/dt immunity	7.1 V/ns - Withstands rapid voltage transients in high-side switching and half-bridge configurations without false turn-on.

Applications

Server PSU Primary Switch

Industrial DC-DC Converter

Use Scenario: High-efficiency 48V-to-12V isolated DC-DC module in rack-mounted server power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology operating at 250 kHz.

Use Value: Low R_DS(on) minimizes conduction loss at 14A peak; 68 mJ E_AS absorbs clamp energy without failure.

Use Scenario: 24V input, 5V/20A output industrial buck-derived isolated converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant stage.

Use Value: 86 ns t_rr and 290 nC Q_rr enable clean zero-current switching at 300 kHz, reducing body diode losses by >40% vs. generic MOSFETs.

Telecom Power Brick

Motor Drive Half-Bridge

Use Scenario: Compact 48V telecom power brick delivering 3.3V/30A for base station RF amplifiers.

IC Role / Device Role / Timing Role: High-side switch in two-switch forward configuration with 100 kHz switching frequency.

Use Value: 7.1 V/ns dv/dt rating prevents spurious turn-on during fast V_DS transitions across transformer leakage inductance.

Use Scenario: 24V BLDC motor driver for HVAC fan control with integrated gate driver.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge driving 10A phase current.

Use Value: 2.7°C/W R_θJC allows direct mounting to aluminum heatsink, maintaining T_J < 125°C at full load without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK100ZFP	100V, 14A, R_DS(on) = 0.12Ω, Q_g = 38 nC, no specified E_AS rating	Lacks documented avalanche capability; higher gate charge increases driver loss	Preferred only where cost sensitivity outweighs reliability requirements in non-inductive loads
IXTP14N10P	100V, 14A, R_DS(on) = 0.11Ω, Q_g = 25 nC, E_AS = 50 mJ	Lower E_AS than IRFR3911TRPBF; slightly faster switching due to lower Q_g	Suitable for medium-duty SMPS where 68 mJ margin is not required; verified compatibility with same PCB footprint

Compared with STP14NK100ZFP and IXTP14N10P, IRFR3911TRPBF delivers superior avalanche ruggedness and tighter C_oss characterization - critical for unclamped inductive switching - while maintaining identical D-Pak footprint and gate drive compatibility.

Availability

IRFR3911TRPBF is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom power bricks requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFR3911TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® power MOSFET portfolio with full backward compatibility and extended product lifetime commitments.

The IRFR3911TRPBF belongs to the HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-reliability switching applications in server, telecom, and industrial power conversion systems.

FAQ

Is IRFR3911TRPBF suitable for synchronous rectification?

Yes. Its body diode has V_SD = 1.3 V at 8.4 A and t_rr = 86 ns, enabling efficient synchronous rectification in LLC and forward converters up to 300 kHz. Layout must minimize source inductance to avoid shoot-through during dead-time transitions.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 9.5 A, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area (≥10 cm² 2-oz copper) and ambient airflow ≥200 LFM for thermal management.

Does IRFR3911TRPBF require a gate resistor for EMI suppression?

A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's Q_gd/Q_gs ratio (≈1.5–1.6) makes it moderately sensitive to Miller effect; 10 Ω provides optimal trade-off between switching speed and EMI.

Can IRFR3911TRPBF be used in linear regulator applications?

No. It is not characterized for linear-mode operation. The Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤100 µs at high V_DS; sustained linear conduction risks thermal runaway due to positive R_DS(on) temperature coefficient above 100°C.

IRFR3911TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3911TRPBF FAQ

1.How can I place an order for IRFR3911TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3911TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3911TRPBF reliable?

The price and inventory of IRFR3911TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3911TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR3911TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3911TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3911TRPBF?

IRFR3911TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3911TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3911TRPBF?

For technical support, including IRFR3911TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3911TRPBF requirements.

6.How does Aetrix verify that IRFR3911TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3911TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3911TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR3911TRPBF?

All IRFR3911TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3911TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3911TRPBF part is unused and in its original packaging.

Return procedure for IRFR3911TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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