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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4104PBF

Name: IRFR4104PBF
Brand: Infineon Technologies
SKU: IRFR4104PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4104PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4104PBF.pdf

Description:: MOSFET N-CH 40V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4104PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak package, rated for 40V V_DSS, 5.5mΩ R_DS(on) at V_GS = 10V, and 42A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_d(on) = 17ns, t_f = 36ns), and rated repetitive avalanche energy up to 480mJ - optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR4104PBF datasheet, IRFR4104PBF pinout, IRFR4104PBF application, or IRFR4104PBF equivalent, key selection criteria include its low R_DS(on) at 10V gate drive, body diode reverse recovery charge (Q_rr = 24–36nC), thermal resistance (R_θJC = 1.05°C/W), and avalanche ruggedness under unclamped inductive switching.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust safe operating area (SOA) up to 100µs pulse width at 42A. Its gate charge profile (Q_g = 59–89nC, Q_gd = 24nC) supports efficient hard-switching in synchronous buck topologies with 6.8Ω gate resistor.

The integrated body diode exhibits V_SD = 1.3V at 42A and trr = 28–42ns, enabling moderate-frequency freewheeling in brushed DC motor drives. Thermal design is anchored by a low R_θJC of 1.05°C/W and validated repetitive avalanche capability up to T_jmax = 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage before avalanche; defines use in ≤36V nominal bus systems (e.g., 24V industrial power rails).
R_DS(on)	5.5mΩ max @ V_GS = 10V - Enables <1.0W conduction loss at 42A, critical for thermally constrained PCB-mount applications.
I_D (cont)	42A @ T_C = 25°C - Continuous current rating limited by package thermal capacity, not silicon die.
Q_g	89nC max - Total gate charge determines driver strength requirement; 6.8Ω gate resistor yields ~100ns effective turn-on time.
E_AS	480mJ (tested) - Single-pulse avalanche energy rating enables reliable operation during inductive load turn-off transients.
T_jmax	175°C - Junction temperature limit allows sustained operation in sealed enclosures or high ambient environments.
Q_rr	36nC max - Reverse recovery charge of internal body diode impacts switching loss and EMI in non-synchronous rectification.

Pinout & Package

IRFR4104PBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement. The three-terminal configuration supports high-current PCB routing with low-inductance source and drain paths.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed copper tab electrically connected to drain; must be soldered to large copper pour for thermal management and low R_θJC.
Source	Return path for load current / reference node for gate drive	Low-inductance connection essential for stable gate control; shared with body diode cathode.
Gate	Control terminal for channel modulation	High-impedance input requiring clean, low-ESR gate drive; Miller charge (Q_gd) dominates switching transition timing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.5mΩ max at 10V gate drive reduces I²R losses in high-current 24V/48V power stages.
175°C junction rating	Enables operation in sealed industrial enclosures without forced air cooling.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in motor drive H-bridges.
Fast switching speed	36ns fall time and 28–42ns reverse recovery support >200kHz PWM in DC-DC converters.
Lead-free construction	RoHS-compliant D-Pak package meets IPC-J-STD-020 reflow profile requirements.

Applications

Brushed DC Motor Drive

24V Synchronous Buck Converter

Use Scenario: Half-bridge control of 24V brushed DC motors in automated guided vehicles (AGVs) with peak currents up to 42A.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; body diode provides freewheeling path during PWM off-time.

Use Value: Low R_DS(on) minimizes heat generation during 100% duty cycle stall conditions; avalanche rating handles back-EMF spikes during abrupt stop commands.

Use Scenario: High-efficiency 24V-to-5V/12V point-of-load converter in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter secondary side; driven complementary to high-side FET.

Use Value: 5.5mΩ R_DS(on) cuts conduction loss by >40% vs. Schottky diode solution; Q_rr < 36nC limits shoot-through risk during dead-time transitions.

Industrial LED Driver

Overcurrent Protection Switch

Use Scenario: Constant-current switching stage for high-brightness LED arrays in factory lighting fixtures (24V input, 3–5A per string).

IC Role / Device Role / Timing Role: PWM-controlled current regulator switch; operates at 1–5kHz to avoid audible noise.

Use Value: 175°C T_jmax sustains reliability in thermally isolated fixture housings; low gate charge enables simple microcontroller GPIO drive.

Use Scenario: Solid-state replacement for electromechanical circuit breakers in 24V battery backup systems.

IC Role / Device Role / Timing Role: Load switch with integrated overcurrent detection via sense-FET monitoring or external shunt.

Use Value: Rated repetitive avalanche withstand allows safe interruption of inductive loads (e.g., solenoids) without destructive failure; R_DS(on) stability over temperature ensures predictable trip thresholds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N4LF6	R_DS(on) = 3.8mΩ @ 10V; smaller PowerFLAT 5x6 package; lower Q_g (52nC); no avalanche rating specified.	Better conduction efficiency in space-constrained designs; unsuitable where unclamped inductive switching occurs.	Select when PCB area is critical and avalanche stress is absent; verify thermal performance with R_θJA = 45°C/W (vs. IRFR4104PBF's 40°C/W).
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 4.0mΩ @ 10V; SO-8FL package; Q_rr = 22nC; avalanche rated to 320mJ.	Lower Q_rr improves light-load efficiency in buck converters; reduced avalanche margin requires careful SOA analysis.	Prefer for high-frequency (>500kHz) synchronous rectification where body diode recovery dominates loss; confirm layout supports SO-8FL thermal pad soldering.

Compared with STL100N4LF6 and NTMFS4C09NT1G, IRFR4104PBF trades slightly higher R_DS(on) for proven 480mJ avalanche ruggedness and D-Pak thermal robustness - making it the preferred choice for industrial motor drives and protection switches where transient overvoltage immunity is non-negotiable.

Availability

IRFR4104PBF is available at Aetrix Electronics and suitable for brushed DC motor drives, 24V synchronous buck converters, industrial LED drivers, and overcurrent protection switches requiring stable component supply across multi-year production cycles.

Supply support for IRFR4104PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability industrial power conversion where thermal resilience, avalanche tolerance, and long-term parametric stability are mandatory.

FAQ

What is the maximum continuous drain current for IRFR4104PBF at 100°C case temperature?

The maximum continuous drain current is 25A at T_C = 100°C and V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package rather than silicon capability, and operation above this current requires active heatsinking or forced airflow to maintain T_C ≤ 100°C.

Does IRFR4104PBF have a specified gate threshold voltage range?

Yes - V_GS(th) is specified from 2.0V to 4.0V at T_J = 25°C and I_D = 250µA. This range indicates consistent turn-on behavior across production lots, supporting reliable 3.3V or 5V logic-level gate drive in microcontroller-based systems without level-shifting.

Can IRFR4104PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Fig.10) ensures inherent current sharing when paralleled. Designers must match gate drive impedance and layout symmetry, and limit total parallel count to ≤4 devices to avoid oscillation risks from combined gate capacitance exceeding driver capability.

Is the body diode in IRFR4104PBF optimized for fast recovery?

The body diode has t_rr = 28–42ns and Q_rr = 24–36nC at I_F = 42A, which qualifies it for moderate-speed freewheeling in motor drives and non-synchronous SMPS. However, it is not a dedicated ultrafast or SiC Schottky-replacement diode; for >500kHz operation, a discrete ultrafast diode is recommended.

IRFR4104PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4104PBF FAQ

1.How can I place an order for IRFR4104PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4104PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4104PBF reliable?

The price and inventory of IRFR4104PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4104PBF is usually 5 days.

3.What payment methods are accepted for IRFR4104PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4104PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4104PBF?

IRFR4104PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4104PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4104PBF?

For technical support, including IRFR4104PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4104PBF requirements.

6.How does Aetrix verify that IRFR4104PBF is sourced from the original manufacturer or authorized distributors?

All IRFR4104PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4104PBF meets industry standards.

7.What is the process for return or replacement of IRFR4104PBF?

All IRFR4104PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4104PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4104PBF part is unused and in its original packaging.

Return procedure for IRFR4104PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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