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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4104TRLPBF

Name: IRFR4104TRLPBF
Brand: Infineon Technologies
SKU: IRFR4104TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4104TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4104TRLPBF.pdf

Description:: MOSFET N-CH 40V 42A DPAK

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Product details

Overview

IRFR4104TRLPBF from Infineon Technologies (formerly International Rectifier) is a 40V N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 5.5 mΩ R_DS(on) at V_GS = 10 V, 42 A continuous drain current at T_C = 25°C, 175°C maximum junction temperature, and rated for repetitive avalanche energy up to 119 mJ - used in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR4104TRLPBF datasheet, IRFR4104TRLPBF pinout, IRFR4104TRLPBF application, or IRFR4104TRLPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (59–89 nC), body diode recovery (Q_rr = 24–36 nC, t_rr = 28–42 ns), and safe operating area under unclamped inductive switching.

Technical Context

This HEXFET® device employs advanced silicon processing to minimize conduction loss per unit area while maintaining robustness against transient overloads. Its design integrates a low-inductance internal structure (L_D = 4.5 nH, L_S = 7.5 nH) and supports fast switching with t_d(on) = 17 ns, t_r = 69 ns, t_d(off) = 37 ns, and t_f = 36 ns under standardized test conditions (V_DD = 20 V, I_D = 42 A, R_G = 6.8 Ω).

The MOSFET includes an integral body diode with V_SD ≤ 1.3 V at I_S = 42 A and exhibits thermally limited single-pulse avalanche energy (E_AS) of 119 mJ, validated up to T_jmax = 175°C. Repetitive avalanche operation is permitted within defined pulse width and duty cycle limits per Figures 15–16 in the official datasheet.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters and H-bridge legs.
R_DS(on)	5.5 mΩ max @ V_GS = 10 V - Determines conduction loss (P_cond ≈ I_D² × R_DS(on)) at full load in high-current power stages.
I_D (continuous)	42 A @ T_C = 25°C - Sustained current capability with heatsink; derates to ~14 A at T_C = 100°C per linear derating factor of 0.95 W/°C.
Q_g	59–89 nC - Total gate charge defining driver strength requirement; impacts switching loss and gate drive loop stability.
t_rr / Q_rr	28–42 ns / 24–36 nC - Body diode reverse recovery metrics critical for synchronous rectification efficiency and EMI in hard-switched topologies.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance enabling direct heatsink mounting; allows ~95 W power dissipation at ΔT = 100°C.

Pinout & Package

IRFR4104TRLPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to high-side switch node or bus rail	Exposed copper pad on bottom side - must be soldered to large PCB copper pour for thermal management and low-inductance return path.
Source (S)	Reference node for gate drive and current sensing; connects to power ground or low-side switch	Internally bonded to substrate; forms common reference for V_GS control and enables Kelvin source sensing in precision applications.
Gate (G)	Control input regulating channel conductivity via electric field	High-impedance MOS gate requiring controlled slew rate; sensitive to ESD and ringing - needs local RC snubber or gate resistor for reliable turn-on/turn-off.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.5 mΩ max at 10 V drive enables <1 W conduction loss at 42 A - reduces heatsink size and improves system efficiency in 12–24 V industrial supplies.
175°C junction rating	Extended thermal margin allows operation in sealed enclosures or high-ambient environments without forced air cooling.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching events up to 119 mJ - eliminates need for external clamping in motor drive flyback paths.
Fast body diode recovery	t_rr ≤ 42 ns and Q_rr ≤ 36 nC reduce cross-conduction losses and voltage overshoot during commutation in half-bridge configurations.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: Driving brushed DC or stepper motor phases in industrial automation controllers with PWM frequencies up to 100 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles bidirectional current during PWM dead-time and regenerative braking.

Use Value: Low R_DS(on) minimizes I²R heating during continuous conduction mode; fast body diode recovery prevents shoot-through during polarity reversal.

Use Scenario: High-current step-down conversion from 12 V or 24 V input to 3.3 V or 5 V for FPGA or microcontroller power rails.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage; replaces Schottky diode to improve efficiency at >10 A loads.

Use Value: 5.5 mΩ R_DS(on) cuts conduction loss by >60% vs. typical 40 V Schottky; Q_rr < 36 nC suppresses voltage spikes during freewheeling transitions.

Automotive HVAC Blower Control

Industrial LED Driver Switch

Use Scenario: PWM-controlled blower fan in automotive cabin climate systems with load currents up to 35 A and ambient temperatures up to 105°C.

IC Role / Device Role / Timing Role: High-current switching transistor interfacing MCU PWM output to brushless fan motor via external gate driver.

Use Value: 175°C T_jmax ensures reliability under hood temperature cycling; repetitive avalanche rating absorbs inductive kickback from motor windings.

Use Scenario: Constant-current switching regulator for high-brightness LED arrays in street lighting or signage, operating at 20–100 kHz.

IC Role / Device Role / Timing Role: Primary switching FET in buck-based constant-current LED driver; modulates average LED current via duty cycle control.

Use Value: Fast switching (t_f = 36 ns) enables high-frequency operation to shrink magnetics; low Q_g reduces gate drive power consumption in isolated gate driver designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10L	R_DS(on) = 10 mΩ @ 10 V; higher on-resistance, lower ID (40 A); TO-220 package	Requires larger heatsink and cannot match thermal performance in D-Pak footprint	Prefer when through-hole assembly or legacy board layout mandates TO-220
IXTP40N10P	R_DS(on) = 12.5 mΩ @ 10 V; TO-220FP package; no avalanche rating specified	Lacks documented repetitive avalanche capability - unsuitable for inductive load switching without external protection	Select only for resistive or capacitive loads where avalanche stress is absent

Compared with STP40NF10L and IXTP40N10P, IRFR4104TRLPBF delivers superior conduction efficiency and integrated avalanche ruggedness in a compact surface-mount package - making it optimal for space-constrained, high-reliability motor and power supply designs where thermal and transient robustness are critical.

Availability

IRFR4104TRLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and LED drivers requiring stable component supply across industrial, automotive, and embedded OEM programs.

Supply support for IRFR4104TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding power conversion and motor control applications - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRFR4104TRLPBF lead-free and RoHS compliant?

Yes, IRFR4104TRLPBF is lead-free and RoHS compliant, as indicated by the "PbF" suffix in its full part number and confirmed in Infineon's official product documentation and material declarations. It meets EU Directive 2011/65/EU requirements and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE).

What is the maximum gate-source voltage rating for safe operation?

The absolute maximum V_GS rating is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10–15 V for full enhancement, with transient overshoot suppressed using gate clamping or Zener diodes to avoid exceeding ±20 V.

Can IRFR4104TRLPBF be used in parallel configurations?

Yes, IRFR4104TRLPBF supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as junction temperature rises. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling - verified in application note AN-1001. Derating total current by 15% is recommended for long-term reliability.

Does the device include integrated ESD protection on the gate?

No, IRFR4104TRLPBF does not incorporate built-in gate ESD protection circuitry. Its gate oxide is susceptible to electrostatic discharge; handling requires strict adherence to Class 1A ESD control (≤250 V HBM). Recommended practices include using grounded wrist straps, conductive foam storage, and series gate resistors (≥10 Ω) to dampen fast transients during PCB assembly and testing.

IRFR4104TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4104TRLPBF FAQ

1.How can I place an order for IRFR4104TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4104TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4104TRLPBF reliable?

The price and inventory of IRFR4104TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4104TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR4104TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4104TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4104TRLPBF?

IRFR4104TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4104TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4104TRLPBF?

For technical support, including IRFR4104TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4104TRLPBF requirements.

6.How does Aetrix verify that IRFR4104TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR4104TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4104TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR4104TRLPBF?

All IRFR4104TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4104TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4104TRLPBF part is unused and in its original packaging.

Return procedure for IRFR4104TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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