Infineon Technologies IRFR4104TRR

Overview

IRFR4104TRR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 40 V V_DS, 58 A I_D (T_C = 100°C), and 12.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR4104TRR datasheet, IRFR4104TRR pinout, IRFR4104TRR application, or IRFR4104TRR equivalent, key selection criteria include its 40 V blocking voltage, 12.5 mΩ on-resistance at 10 V gate drive, D-Pak thermal performance, and suitability for 12 V/24 V automotive and industrial switching loads.

Technical Context

This MOSFET uses planar silicon process with optimized cell pitch and trench-assisted channel design to achieve low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th)) is 2.0–4.0 V, enabling compatibility with standard 5 V and 3.3 V logic-level drivers.

The device features fully avalanche-rated operation (E_AS = 170 mJ at T_J = 25°C), integrated body diode with soft recovery (t_rr ≈ 55 ns), and specified SOA for repetitive pulse operation up to 100 µs.

Key Specifications

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, single-ended heat sink interface via exposed drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with STP40NF10L and NTMFS4C029N, IRFR4104TRR delivers optimal balance of 40 V rating, D-Pak thermal performance, and gate drive compatibility-making it preferred for 12–24 V industrial and automotive switching where reliability and layout density matter.

Availability

IRFR4104TRR is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, server power OR-ing, and telecom DC-DC conversion requiring stable component supply across multi-year production cycles.

Supply support for IRFR4104TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® product line-originally developed by International Rectifier and now part of Infineon-targets high-efficiency, high-reliability power switching in automotive, industrial, and computing infrastructure applications.

FAQ

What is the maximum junction temperature for IRFR4104TRR?

The absolute maximum junction temperature is 175°C. Derating begins at 100°C case temperature per the Safe Operating Area curve; sustained operation above 150°C requires active thermal management and reduced current derating per the datasheet SOA graph.

Is IRFR4104TRR suitable for use with 3.3 V microcontroller GPIO?

Yes-its V_GS(th) range (2.0–4.0 V) ensures turn-on with 3.3 V logic, but full R_DS(on) specification (12.5 mΩ) requires V_GS ≥ 10 V. For 3.3 V drive, expect ~25–35 mΩ R_DS(on); use gate driver ICs like TC4427 for full performance.

Does IRFR4104TRR have integrated ESD protection?

No-this discrete MOSFET lacks on-chip ESD protection structures. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp to source) is required in handling and PCB layout to prevent gate oxide damage during assembly or system operation.

Can IRFR4104TRR replace IRFZ44N in existing designs?

Not directly-IRFZ44N is TO-220 packaged (higher R_DS(on) = 28 mΩ, same 55 V rating). While both are N-channel, IRFR4104TRR's D-Pak footprint, lower R_DS(on), and different thermal profile require PCB layout revision and thermal validation before substitution.