My Inquiry
My Account
Infineon Technologies IRFR4104TRRPBF
- Part No.:
- IRFR4104TRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR4104TRRPBF.pdf
- Description:
- MOSFET N-CH 40V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,541
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR4104TRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 40V VDSS, 42A continuous drain current at TC = 25°C, and 5.5mΩ RDS(on) at VGS = 10V. It features 175°C maximum junction temperature, fast switching (tr = 69ns, tf = 36ns), and rated repetitive avalanche capability-used in DC-DC converters, motor drives, and high-efficiency power supplies.
For engineers reviewing the IRFR4104TRRPBF datasheet, IRFR4104TRRPBF pinout, IRFR4104TRRPBF application, or IRFR4104TRRPBF equivalent, key selection criteria include its low on-resistance at 10V gate drive, body diode recovery performance (trr = 28–42ns, Qrr = 24–36nC), thermal resistance (RθJC = 1.05°C/W), and D-Pak mounting compatibility with standard PCB layouts.
Technical Context
This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust unclamped inductive switching capability. Its gate charge profile (Qg = 59–89nC, Qgd = 24nC) supports efficient high-frequency operation up to several hundred kHz in synchronous buck topologies.
The integrated body diode exhibits low forward voltage (VSD ≤ 1.3V at 42A) and controlled reverse recovery behavior, enabling reliable operation in hard-switched freewheeling paths without external Schottky supplementation in many 12V/24V systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage before avalanche; defines use in ≤36V nominal input systems. |
| RDS(on) | 5.5mΩ max @ VGS = 10V - Enables <1.5W conduction loss at 42A, critical for thermally constrained PCB-mount designs. |
| ID (continuous) | 42A @ TC = 25°C - Sustained current capability when mounted on ≥1in² 2oz copper with thermal via array. |
| tr/tf | 69ns / 36ns - Fast edge rates reduce switching losses in 200–500kHz SMPS designs. |
| EAS | 480mJ (tested) - Confirmed single-pulse avalanche energy rating supports robustness against inductive load transients. |
| RθJC | 1.05°C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density applications. |
| Qg | 89nC max - Total gate charge determines required driver peak current (e.g., >1.3A for 60ns turn-on with 6.8Ω gate resistor). |
Pinout & Package
IRFR4104TRRPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (tab and pin 2), Source (pin 1), Gate (pin 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of N-channel MOSFET | Low-side return path; connects directly to power ground plane; carries full load current and body diode conduction. |
| Pin 2 (Drain) | Drain terminal (also metal tab) | High-current output node; electrically and thermally connected to exposed copper tab-must be soldered to large copper pour or heatsink. |
| Pin 3 (Gate) | Control electrode | High-impedance input requiring low-inductance routing; sensitive to ringing-requires local gate resistor (6.8Ω typical) and optional gate-to-source capacitor. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 5.5mΩ max at 10V drive reduces I²R losses in high-current 12V/24V bus applications. |
| 175°C junction rating | Enables operation in sealed enclosures or high-ambient environments without derating below 42A at TC = 100°C. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to Tjmax, eliminating need for external clamping in motor control H-bridges. |
| Fast body diode recovery | trr = 28–42ns and Qrr = 24–36nC minimize shoot-through risk and EMI in synchronous rectification. |
| Lead-free construction | RoHS-compliant packaging meets IPC/JEDEC J-STD-020 reflow profiles for automated assembly. |
Applications
| DC-DC Buck Converter | Brushless DC Motor Inverter |
|---|---|
Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load converter in industrial PLCs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300kHz with 10V gate drive. Use Value: 5.5mΩ RDS(on) limits conduction loss to <1.0W at 30A, reducing thermal footprint versus higher-RDS(on) alternatives. | Use Scenario: Half-bridge leg in 24V BLDC fan controller with PWM commutation. IC Role / Device Role / Timing Role: High-current, low-loss switching element handling 42A peak phase current. Use Value: Rated repetitive avalanche allows safe operation during back-EMF transients without snubber networks. |
| Automotive LED Driver | Hot-Swap Power Controller |
Use Scenario: Constant-current LED string driver in commercial vehicle lighting modules. IC Role / Device Role / Timing Role: PWM-controlled high-side or low-side current switch with analog dimming interface. Use Value: 175°C Tj rating ensures reliability under hood temperatures up to 125°C ambient with margin. | Use Scenario: Inrush current limiter and fault protection switch in 48V telecom power distribution. IC Role / Device Role / Timing Role: Hot-swap FET controlling power ramp-up and overcurrent shutdown. Use Value: Low Qg (59nC typ.) enables precise gate timing for soft-start control with minimal external components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N4LH5 | RDS(on) = 3.1mΩ @ 10V; smaller H2PAK-2 package; lower Qg (52nC); no specified avalanche rating. | Better conduction efficiency in space-constrained designs; unsuitable where unclamped inductive stress is expected. | Prefer for compact, high-frequency DC-DC where thermal headroom exists and avalanche events are absent. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 4.0mΩ @ 10V; SO-8FL package; RθJA = 50°C/W (PCB mount); not rated for repetitive avalanche. | Higher thermal resistance limits continuous current to ~25A on standard FR4; lacks avalanche validation for motor drive use. | Select only for low-power, low-duty-cycle switching where board-level thermal design precludes D-Pak mounting. |
Compared with STL130N4LH5 and NTMFS4C09NT1G, IRFR4104TRRPBF trades slightly higher RDS(on) for proven repetitive avalanche capability and superior thermal management via D-Pak's low RθJC, making it preferred for ruggedized industrial and automotive power stages.
Availability
IRFR4104TRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, and automotive LED drivers requiring stable component supply across extended production lifecycles.
Supply support for IRFR4104TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions.
The IRFR4104TRRPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial power conversion and motor control systems.
FAQ
What is the maximum recommended gate drive voltage for IRFR4104TRRPBF?
The absolute maximum VGS is ±20V, but the device is characterized and optimized for 10V gate drive. Operating above 12V provides negligible RDS(on) improvement while increasing gate oxide stress and ESD sensitivity. For robust long-term reliability, 10V is the recommended nominal drive level per Infineon's application guidance.
Can IRFR4104TRRPBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (normalized to 2.0× at 175°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal mass. Derate total current by 15% versus sum of individual ratings to account for layout-induced imbalances.
Does IRFR4104TRRPBF require a gate resistor, and what value is typical?
Yes-a series gate resistor is mandatory to dampen oscillation and limit peak gate current. A 6.8Ω resistor is specified in the datasheet for 10V drive with 42A load. Lower values (e.g., 2.2Ω) may be used for faster switching if driver capability and EMI allow; higher values (>15Ω) reduce EMI but increase switching losses.
Is the D-Pak tab of IRFR4104TRRPBF electrically isolated?
No-the metal tab is internally connected to the Drain terminal. It must be electrically isolated from other circuit nodes using insulating thermal pads or sil-pad materials if mounted to a common heatsink. Failure to isolate risks short-circuiting the drain to adjacent grounded structures.
IRFR4104TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 89 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2950 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR4104TRRPBF FAQ
1.How can I place an order for IRFR4104TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR4104TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR4104TRRPBF reliable?
The price and inventory of IRFR4104TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4104TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR4104TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4104TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR4104TRRPBF?
IRFR4104TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR4104TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR4104TRRPBF?
For technical support, including IRFR4104TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4104TRRPBF requirements.
6.How does Aetrix verify that IRFR4104TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR4104TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4104TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR4104TRRPBF?
All IRFR4104TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4104TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR4104TRRPBF part is unused and in its original packaging.
Return procedure for IRFR4104TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR4104TRRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
