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Infineon Technologies IRFR4105PBF
- Part No.:
- IRFR4105PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR4105PBF.pdf
- Description:
- MOSFET N-CH 55V 27A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,986
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Product details
Overview
IRFR4105PBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 27 A N-channel enhancement-mode power MOSFET in D-PAK (TO-252AA) surface-mount package, featuring 45 mΩ RDS(on) at VGS = 10 V, fully avalanche-rated operation, and fast switching with 34 nC total gate charge. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFR4105PBF datasheet, IRFR4105PBF pinout, IRFR4105PBF application, or IRFR4105PBF equivalent, key selection criteria include its 55 V VDS, 45 mΩ on-resistance at 10 V gate drive, 100 A pulsed drain rating, -55°C to +175°C operating range, and D-PAK thermal performance with 2.2°C/W junction-to-case resistance.
Technical Context
This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining rugged unclamped inductive switching capability. Its 6.5 S forward transconductance and low 100 pF reverse transfer capacitance (Crss) support stable high-frequency PWM control up to several hundred kHz.
The integrated body diode exhibits 1.6 V forward voltage at 16 A and 57–86 ns reverse recovery time, enabling use in freewheeling paths without external Schottky supplementation in moderate-speed applications. Avalanche energy rating of 65 mJ (single-pulse) confirms robustness under transient overvoltage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 12/24/48 V bus systems with margin |
| RDS(on) | 45 mΩ @ VGS = 10 V - Enables ≤1.2 W conduction loss at 16 A continuous current |
| ID (TC = 25°C) | 27 A - Continuous current rating with heatsink or PCB copper area |
| Qg | 34 nC - Gate drive energy requirement for 100 kHz switching at 10 V gate voltage |
| EAS | 65 mJ - Single-pulse avalanche energy tolerance without failure |
| RθJC | 2.2 °C/W - Thermal resistance enabling 30.9 W dissipation before reaching 175°C junction limit |
| tr / tf | 49 ns / 40 ns - Rise/fall times supporting <500 kHz hard-switched topologies |
Pinout & Package
IRFR4105PBF is housed in a D-PAK (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-S-D order (Gate–Source–Drain) when viewed from the top with marking side up and leads pointing downward.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives 10 V logic-level gate drive; threshold voltage 2.0–4.0 V enables compatibility with microcontroller GPIO |
| Source (S) | Reference node | Common return path for load current; ties to ground or low-side shunt in half-bridge configurations |
| Drain (D) | Power output terminal | Connected to high-side rail or inductive load; electrically and thermally tied to exposed copper pad on bottom of package |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 65 mJ single-pulse and 6.8 mJ repetitive avalanche energy withstand without degradation |
| Ultra-low RDS(on) | 45 mΩ at 10 V gate drive reduces I²R losses by >30% vs. legacy 55 V MOSFETs in same package |
| Fast switching | 7 ns turn-on delay + 49 ns rise time supports high-frequency SMPS designs with minimal switching loss |
| Surface-mount optimized | D-PAK footprint allows automated placement and vapor-phase reflow; 2.2°C/W RθJC enables direct thermal coupling to PCB copper |
| High-temperature operation | Rated for continuous operation from –55°C to +175°C junction temperature |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V input to 3.3/5 V output step-down converter in industrial PLC modules. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, replacing Schottky diode to reduce conduction loss. Use Value: 45 mΩ RDS(on) cuts rectifier loss by ~65% vs. 0.4 V Schottky at 10 A, improving full-load efficiency from 88% to 93%. | Use Scenario: H-bridge driver for 24 V brushed motors in warehouse automation conveyors. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation. Use Value: 100 A pulsed drain rating handles 5× stall current surges; 175°C max junction temperature sustains operation in enclosed enclosures. |
| LED Constant-Current Driver | Hot-Swap Controller |
Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in outdoor signage. IC Role / Device Role / Timing Role: Precision current-sink switch modulated via analog or PWM input. Use Value: 27 A continuous rating supports multi-string parallel drive; low gate charge enables smooth 1–10 kHz dimming without audible noise. | Use Scenario: Inrush current limiter for 48 V backplane hot-swap cards in telecom equipment. IC Role / Device Role / Timing Role: Linear pass element controlled by dedicated hot-swap IC to ramp supply voltage. Use Value: 55 V VDS provides 20% margin above 48 V nominal; 2.2°C/W RθJC allows safe linear-mode operation during 500 ms soft-start. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N5LF6AG | 60 V VDS, 4.5 mΩ RDS(on) @ 10 V, PowerFLAT 5x6 package | Lower on-resistance but higher gate charge (52 nC); requires larger PCB area for thermal relief | Select for ultra-low-loss 48 V systems where gate drive strength permits higher Qg |
| ON Semiconductor NTMFS4C09NT1G | 40 V VDS, 3.8 mΩ RDS(on) @ 10 V, SO-8FL package | Lower voltage rating limits to ≤36 V buses; smaller footprint but 3.5× lower avalanche energy (18 mJ) | Select only for compact 24 V designs with tightly clamped transients and no unclamped inductive loads |
Compared with STL100N5LF6AG and NTMFS4C09NT1G, IRFR4105PBF offers balanced trade-offs: sufficient 55 V rating for 48 V systems, proven avalanche ruggedness for motor and relay loads, and D-PAK manufacturability-making it preferred for industrial motion and power conversion where reliability outweighs marginal RDS(on) gains.
Availability
IRFR4105PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and hot-swap controllers requiring stable component supply across extended product lifecycles.
Supply support for IRFR4105PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's pioneering HEXFET technology.
The IRFR/U4105 series belongs to Infineon's industrial-grade power MOSFET portfolio, designed specifically for ruggedized, high-reliability switching in harsh-environment power conversion and motor control applications.
FAQ
Is IRFR4105PBF compatible with 3.3 V microcontroller GPIO for direct gate driving?
No. With a gate threshold voltage range of 2.0–4.0 V and 34 nC total gate charge, reliable enhancement-mode switching requires ≥10 V gate drive. Using 3.3 V risks incomplete turn-on, excessive RDS(on), and thermal runaway. A gate driver IC such as TC4427 or MIC4422 is required for logic-level control.
What is the maximum continuous current achievable with IRFR4105PBF on a standard 1" × 1" FR-4 PCB?
At TC = 100°C, the datasheet specifies 19 A continuous drain current. On a 1" square FR-4 board per AN-994, thermal resistance RθJA is 50°C/W. With 2.2°C/W RθJC, maximum power dissipation is limited to ~30.9 W, supporting ~17.5 A continuous at 45 mΩ-consistent with derated 19 A rating including safety margin.
Does IRFR4105PBF have a built-in ESD protection diode on the gate?
No. The device lacks integrated gate protection circuitry. Per datasheet Absolute Maximum Ratings, gate-to-source voltage must remain within ±20 V. External Zener clamps (e.g., 12 V TVS between G and S) are recommended in environments with routing near noisy traces or connectors to prevent gate oxide damage from electrostatic discharge.
Can IRFR4105PBF replace IRFU4105PBF in through-hole designs?
No. IRFR4105PBF uses D-PAK (TO-252AA) surface-mount packaging, while IRFU4105PBF uses I-PAK (TO-251AA) through-hole packaging. Footprints, soldering methods, and mechanical mounting are incompatible. Though electrically identical, substitution requires PCB redesign and requalification of thermal and mechanical performance.
IRFR4105PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR4105PBF FAQ
1.How can I place an order for IRFR4105PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR4105PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR4105PBF reliable?
The price and inventory of IRFR4105PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105PBF is usually 5 days.
3.What payment methods are accepted for IRFR4105PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR4105PBF?
IRFR4105PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR4105PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR4105PBF?
For technical support, including IRFR4105PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105PBF requirements.
6.How does Aetrix verify that IRFR4105PBF is sourced from the original manufacturer or authorized distributors?
All IRFR4105PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105PBF meets industry standards.
7.What is the process for return or replacement of IRFR4105PBF?
All IRFR4105PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR4105PBF part is unused and in its original packaging.
Return procedure for IRFR4105PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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