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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105TRL

Name: IRFR4105TRL
Brand: Infineon Technologies
SKU: IRFR4105TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4105TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105TRL.pdf

Description:: MOSFET N-CH 55V 27A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4105TRL from Infineon Technologies (formerly International Rectifier) is a 55 V, 27 A N-channel surface-mount Power MOSFET in D-PAK (TO-252AA) package, featuring 45 mΩ R_DS(on) at V_GS = 10 V, fully avalanche-rated, and optimized for DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR4105TRL datasheet, IRFR4105TRL pinout, IRFR4105TRL application, or IRFR4105TRL equivalent, key selection criteria include its 55 V V_BR(DSS), 45 mΩ on-resistance, 100 A pulsed drain current capability, fast 49 ns rise time, and rugged unclamped inductive switching performance up to 65 mJ single-pulse avalanche energy.

Technical Context

This HEXFET® device belongs to International Rectifier's fifth-generation silicon process, delivering ultra-low on-resistance per die area while maintaining high dv/dt immunity (5.0 V/ns) and robust body diode recovery (t_rr = 57–86 ns, Q_rr = 130–200 nC). Its gate charge profile (Q_g = 34 nC, Q_gd = 14 nC) supports efficient high-frequency switching above 100 kHz.

The device integrates a co-packaged p-n junction body diode with V_SD = 1.6 V at I_S = 16 A and exhibits linear thermal derating (0.45 W/°C) from 68 W P_D at T_C = 25°C, enabling stable operation up to T_J = 175°C in compact PCB-mounted designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	55 V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 48 V bus systems.
R_DS(on)	45 mΩ @ V_GS = 10 V - Low conduction loss enabling <1.2 W I²R dissipation at 16 A continuous current.
I_D (T_C = 25°C)	27 A - Continuous drain current rating under ideal heatsinking; limited to 19 A at 100°C case temperature.
E_AS	65 mJ - Single-pulse avalanche energy tolerance; allows reliable operation under inductive turn-off stress without external snubbers.
t_r/t_f	49 ns / 40 ns - Fast switching transitions reduce switching losses in hard-switched topologies like buck converters.
Q_g	34 nC - Total gate charge determines driver strength requirement; compatible with standard 1-A peak gate drivers.
C_iss/C_oss	700 pF / 240 pF - Input/output capacitance values directly impact zero-voltage switching feasibility and EMI behavior.

Pinout & Package

D-PAK (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement; requires FR-4 PCB mounting with recommended footprint per AN-994.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and gate reference	Connected to power ground plane; serves as common reference for gate drive and current sensing.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring low-inductance routing to minimize ringing during fast switching.
Pin 3 (Drain)	Main power output node	Internally connected to exposed copper pad; must be soldered to large copper area for thermal conduction.

Key Features

Feature	Design Value
Fully avalanche-rated	Guarantees survivability under unclamped inductive switching events up to 65 mJ without degradation.
Ultra-low R_DS(on)	45 mΩ enables >95% efficiency in 12–48 V synchronous rectifiers at 10–20 A load currents.
Fast body diode recovery	t_rr = 57 ns (typ.) reduces reverse recovery losses and EMI in freewheeling paths of buck and half-bridge circuits.
Lead-free and RoHS-compliant	Pb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1).

Applications

DC-DC Buck Converter

Brushless DC Motor Driver

Use Scenario: High-efficiency 12 V to 3.3 V point-of-load conversion in server VRMs and telecom power modules.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: Achieves >94% efficiency at 15 A output by cutting I²R loss vs. 0.45 V Schottky, reducing thermal stress on adjacent controllers.

Use Scenario: Low-side switching in 24 V BLDC inverter stages for industrial pumps and HVAC blowers.

IC Role / Device Role / Timing Role: N-channel power switch in 3-phase bridge leg, driven by gate driver IC with bootstrap supply.

Use Value: Withstands repetitive 16 A phase current and 5.0 V/ns dv/dt during commutation, eliminating need for external clamping.

AC-DC Secondary-Side Sync Rect

Hot-Swap ORing Circuit

Use Scenario: Secondary-side synchronous rectification in 55 V-output LLC resonant adapters for laptops and monitors.

IC Role / Device Role / Timing Role: Controlled rectifier activated only during forward conduction, synchronized to primary-side timing.

Use Value: Reduces secondary-side loss by 40% vs. Si diode, lowering transformer temperature rise and improving no-load regulation.

Use Scenario: Redundant 48 V power feed ORing in telecom shelf systems with automatic fault isolation.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass element controlled by dedicated ORing controller to minimize forward drop.

Use Value: 45 mΩ on-resistance limits voltage drop to <0.7 V at 15 A, preserving system voltage margin and simplifying thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_BR(DSS), 50 mΩ R_DS(on), TO-220 package	Through-hole mounting; higher R_DS(on) increases conduction loss by ~11% at 16 A	Select when board space permits through-hole assembly and 60 V margin is required over 55 V.
ON Semiconductor NTMFS4C09NT1G	40 V V_BR(DSS), 3.2 mΩ R_DS(on), PowerTrench® SO-8FL	Lower voltage rating; unsuitable for 48 V bus; superior R_DS(on) only valid below 40 V operation	Choose only for ≤36 V systems where ultra-low on-resistance justifies reduced voltage headroom.

Compared with STP55NF06L and NTMFS4C09NT1G, IRFR4105TRL uniquely balances 55 V rating, 45 mΩ on-resistance, D-PAK thermal performance, and proven avalanche ruggedness-making it optimal for 48 V industrial and telecom power stages where reliability and surface-mount compatibility are critical.

Availability

IRFR4105TRL is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, AC-DC synchronous rectifiers, and hot-swap ORing circuits requiring stable component supply across production lifecycles.

Supply support for IRFR4105TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFR/U4105 series belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in surface-mount and through-hole power conversion systems.

FAQ

What is the maximum junction temperature and thermal resistance of IRFR4105TRL?

The absolute maximum junction temperature is +175°C. Junction-to-case thermal resistance (R_θJC) is 2.2°C/W, and junction-to-ambient (R_θJA) is 50°C/W on a 1-inch square FR-4 PCB. These values define thermal design boundaries for continuous operation under specified ambient and heatsink conditions.

Does IRFR4105TRL have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic p-n junction body diode with V_SD = 1.6 V at I_S = 16 A and T_J = 25°C, reverse recovery time t_rr = 57–86 ns, and Q_rr = 130–200 nC. These characteristics enable use in freewheeling and synchronous rectification without external diodes.

Can IRFR4105TRL be used in avalanche mode, and what energy level is rated?

Yes, it is fully avalanche-rated with single-pulse avalanche energy E_AS = 65 mJ and repetitive avalanche energy E_AR = 6.8 mJ. This rating is validated per JEDEC JESD24-11 and supports reliable operation during unclamped inductive switching transients.

What is the gate threshold voltage range, and how does it affect logic-level drive compatibility?

V_GS(th) ranges from 2.0 V to 4.0 V at I_D = 250 µA. While not a logic-level MOSFET (which typically specifies V_GS(th) ≤ 2.5 V), it achieves full enhancement at V_GS = 10 V and remains compatible with standard 5 V or 3.3 V gate drivers when operated in linear or PWM modes with sufficient gate drive margin.

IRFR4105TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105TRL FAQ

1.How can I place an order for IRFR4105TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105TRL reliable?

The price and inventory of IRFR4105TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105TRL is usually 5 days.

3.What payment methods are accepted for IRFR4105TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105TRL?

IRFR4105TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105TRL?

For technical support, including IRFR4105TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105TRL requirements.

6.How does Aetrix verify that IRFR4105TRL is sourced from the original manufacturer or authorized distributors?

All IRFR4105TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105TRL meets industry standards.

7.What is the process for return or replacement of IRFR4105TRL?

All IRFR4105TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105TRL part is unused and in its original packaging.

Return procedure for IRFR4105TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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