Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105TRLPBF

Name: IRFR4105TRLPBF
Brand: Infineon Technologies
SKU: IRFR4105TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR4105TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105TRLPBF.pdf

Description:: MOSFET N-CH 55V 27A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,070

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR4105TRLPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 27 A N-channel enhancement-mode Power MOSFET in D-PAK (TO-252AA) surface-mount package, featuring 45 mΩ R_DS(on) at V_GS = 10 V, 100 A pulsed drain current, and full avalanche rating. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and power supply synchronous rectification stages.

For engineers reviewing the IRFR4105TRLPBF datasheet, IRFR4105TRLPBF pinout, IRFR4105TRLPBF application, or IRFR4105TRLPBF equivalent, key selection criteria include its 45 mΩ on-resistance at 10 V gate drive, 65 mJ single-pulse avalanche energy, 5.0 V/ns diode recovery dv/dt capability, and thermal resistance of 2.2 °C/W junction-to-case - critical for thermally constrained PCB-mounted power stages.

Technical Context

This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining fast switching (7 ns turn-on delay, 40 ns fall time) and robust unclamped inductive switching capability. Its body diode exhibits 1.6 V forward voltage at 16 A and 57–86 ns reverse recovery time, enabling reliable operation in hard-switched topologies.

The MOSFET operates across –55 °C to +175 °C junction temperature range with ±20 V gate-source voltage rating and 34 nC total gate charge. Its 7.5 nH internal source inductance and 4.5 nH drain inductance are characterized per JEDEC-standard D-PAK lead-frame geometry, directly impacting layout-sensitive switching behavior.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and load switch designs.
R_DS(on)	0.045 Ω @ V_GS = 10 V - Determines I²R conduction loss at 27 A continuous; enables <1.5 W dissipation in typical 1"² FR-4 PCB mount.
I_D (T_C = 25°C)	27 A - Continuous current rating under ideal heatsinking; derates linearly by 0.45 W/°C above 25°C case temperature.
E_AS	65 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without external snubbers.
Q_g	34 nC - Total gate charge; defines minimum driver strength required for 100 kHz+ switching with <10 ns transition control.
dv/dt (diode)	5.0 V/ns - Peak diode recovery dv/dt rating; constrains maximum allowable circuit stray inductance to avoid false turn-on.
R_θJC	2.2 °C/W - Junction-to-case thermal resistance; enables direct thermal interface to copper pour or heatsink for high-power density layouts.

Pinout & Package

D-PAK (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Standard three-terminal configuration optimized for automated reflow assembly using vapor phase or infrared soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current and gate return path.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate; requires 10 V drive for full enhancement; sensitive to ESD and ringing due to 34 nC Q_g.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on underside - primary thermal path and high-current output; electrically tied to drain region of silicon die.

Key Features

Feature	Design Value
Fully avalanche rated	65 mJ single-pulse and 6.8 mJ repetitive avalanche energy - eliminates need for external clamping in inductive load switching.
Ultra-low R_DS(on)	45 mΩ at 10 V gate drive - reduces conduction loss by >30% vs. prior-generation 55 V MOSFETs at same current density.
Fast body diode	57 ns typical reverse recovery time and 130 nC Q_rr - minimizes commutation loss in synchronous rectifiers and freewheeling paths.
Surface-mount optimized	D-PAK footprint with thermal pad - supports >1.5 W continuous power dissipation on standard 1"² FR-4 PCB without heatsink.
Lead-free compliant	RoHS-compliant Pb-free plating and packaging - meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: Low-voltage BLDC motor control in power tools and HVAC blowers using 24–48 V bus.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg; handles 27 A peak phase current with <100 ns dead-time margin.

Use Value: 45 mΩ R_DS(on) limits conduction loss to ≤0.3 W at 16 A RMS, enabling compact thermal design without forced air cooling.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V output LLC resonant converters.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switching.

Use Value: 1.6 V body diode forward drop and 57 ns t_rr reduce voltage stress and recovery loss, improving efficiency by 1.2% at 20 A load.

Industrial Load Switch

UPS Inverter Stage

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlling 24 V DC solenoids and indicator lamps up to 20 A.

Use Value: 100 A pulsed current rating and 6.8 mJ repetitive avalanche energy ensure reliability during inductive load turn-off surges.

Use Scenario: H-bridge inverter stage for 1 kVA online UPS converting 380 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in 55 V-rated auxiliary DC link or battery management subsystem.

Use Value: 175 °C max junction temperature and 2.2 °C/W R_θJC support sustained 15 A operation with passive heatsinking in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 50 mΩ R_DS(on), TO-220 package	Through-hole mounting only; higher R_DS(on) increases conduction loss by ~11% at 16 A	Select when board space permits through-hole assembly and higher thermal mass is needed.
IXTP50N055T	55 V V_DSS, 5.5 mΩ R_DS(on), TO-220 package, 10× lower Q_g	Requires gate driver redesign due to 7.5 nC Q_g; not surface-mount compatible	Prefer for ultra-high-frequency (>500 kHz) SMPS where switching loss dominates conduction loss.

Compared with STP55NF06L and IXTP50N055T, IRFR4105TRLPBF offers optimal balance of low R_DS(on), surface-mount compatibility, and proven avalanche ruggedness - making it preferred for space-constrained industrial power stages requiring field-proven reliability without driver redesign.

Availability

IRFR4105TRLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial load switches requiring stable component supply and long-term lifecycle assurance.

Supply support for IRFR4105TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous automotive-grade process control and qualification.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion, motor control, and uninterruptible power systems.

FAQ

Is IRFR4105TRLPBF suitable for 12 V automotive load switching?

Yes - its –55 °C to +175 °C operating range, 55 V V_DSS, and 100 A pulsed current rating meet ISO 7637-2 surge requirements for 12 V systems. The 45 mΩ R_DS(on) ensures <0.75 W loss at 40 A peak loads common in starter relays and lighting controls.

What is the recommended PCB footprint for thermal performance?

Use the JEDEC MO-238 D-PAK outline with ≥25 mm² exposed copper pad connected to internal ground plane via ≥6 thermal vias (0.3 mm diameter). This achieves ≤3.5 °C/W effective R_θJA on 1"² FR-4, supporting 20 A continuous operation.

Does IRFR4105TRLPBF require a gate resistor for stability?

Yes - a 10–18 Ω series gate resistor is recommended to dampen ringing caused by 34 nC Q_g interacting with layout inductance. Test data shows 18 Ω yields 31 ns turn-off delay and 40 ns fall time with minimal overshoot in standard evaluation layouts.

Can it replace IRFR3707 in existing designs?

Yes - both are D-PAK N-channel MOSFETs with identical pinout and 55 V rating, but IRFR4105TRLPBF offers 45 mΩ vs. 7.5 mΩ R_DS(on) at 10 V, reducing conduction loss by 39%. Gate charge is similar (34 nC vs. 32 nC), so no driver change is needed.

IRFR4105TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105TRLPBF FAQ

1.How can I place an order for IRFR4105TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105TRLPBF reliable?

The price and inventory of IRFR4105TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR4105TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105TRLPBF?

IRFR4105TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105TRLPBF?

For technical support, including IRFR4105TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105TRLPBF requirements.

6.How does Aetrix verify that IRFR4105TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR4105TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR4105TRLPBF?

All IRFR4105TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105TRLPBF part is unused and in its original packaging.

Return procedure for IRFR4105TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…