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Infineon Technologies IRFR4105TRR
- Part No.:
- IRFR4105TRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR4105TRR.pdf
- Description:
- MOSFET N-CH 55V 27A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,278
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Product details
Overview
IRFR4105TRR from Infineon Technologies (formerly International Rectifier) is a 55 V, 27 A N-channel enhancement-mode power MOSFET in D-PAK (TO-252AA) surface-mount package, featuring 45 mΩ RDS(on) at VGS = 10 V, fully avalanche-rated, and optimized for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR4105TRR datasheet, IRFR4105TRR pinout, IRFR4105TRR application, or IRFR4105TRR equivalent, key selection criteria include its 55 V VDS, 45 mΩ on-resistance, 100 A pulsed drain rating, fast 49 ns rise time, and rugged unclamped inductive switching capability up to 65 mJ single-pulse avalanche energy.
Technical Context
This HEXFET® device uses fifth-generation silicon processing to minimize conduction loss while maintaining fast switching (tr = 49 ns, tf = 40 ns) and robust safe operating area (SOA) across temperature. Its gate charge profile (Qg = 34 nC, Qgd = 14 nC) supports efficient hard-switching in synchronous buck stages.
The integrated body diode exhibits 1.6 V forward voltage at 16 A and 57–86 ns reverse recovery time with 130–200 nC Qrr, enabling moderate-frequency freewheeling in non-isolated topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 48 V nominal bus systems with 20 % margin |
| RDS(on) | 45 mΩ @ VGS = 10 V - Enables ≤1.2 W conduction loss at 16 A continuous current |
| ID (TC = 25°C) | 27 A - Sustains full-load current in compact heatsinked PCB layouts |
| EAS | 65 mJ - Withstands unclamped inductive turn-off transients in motor drive H-bridges |
| Qg | 34 nC - Determines gate driver power requirement (~340 µC total per 10 kHz switching cycle) |
| tr/tf | 49/40 ns - Supports >200 kHz PWM operation with low switching loss in buck regulators |
| RθJC | 2.2 °C/W - Enables direct thermal pad mounting to copper pour for <10 °C junction rise at 20 W dissipation |
Pinout & Package
D-PAK (TO-252AA) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for load current | Connected to ground plane or low-impedance source node; carries full load current and body diode conduction |
| Pin 2 (Gate) | Control input for channel modulation | High-impedance node requiring low-inductance gate loop; driven by dedicated MOSFET driver IC or microcontroller GPIO with series resistor |
| Pin 3 (Drain) | Main power output terminal | Exposed metal tab electrically tied to drain; must be soldered to large copper area for thermal management and EMI reduction |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 65 mJ single-pulse and 6.8 mJ repetitive avalanche energy - eliminates need for external snubbers in inductive load switching |
| Ultra-low RDS(on) | 45 mΩ at 10 V gate drive - reduces conduction loss by >30 % vs. legacy 55 V MOSFETs in same package |
| Fast switching speed | 7 ns turn-on delay + 49 ns rise time - enables high-frequency operation with minimal overlap loss |
| Surface-mount D-PAK | TO-252AA footprint - supports automated placement and reflow, with thermal pad for 2.2 °C/W junction-to-case resistance |
| Lead-free and RoHS compliant | PbF suffix - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), suitable for standard reflow profiles |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load regulator in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous high-side switch in fixed-frequency 500 kHz buck stage, controlled by PWM controller. Use Value: 45 mΩ RDS(on) limits conduction loss to <1.2 W at 16 A, enabling >94 % efficiency without forced air cooling. | Use Scenario: Half-bridge H-bridge for bidirectional 24 V brushed motor control in HVAC damper actuators. IC Role / Device Role / Timing Role: Low-side switching element with fast 40 ns fall time to minimize shoot-through risk during direction reversal. Use Value: 100 A pulsed rating and 65 mJ avalanche energy tolerate back-EMF spikes during abrupt motor stop commands. |
| AC-DC Secondary-Side Sync Rectifier | Hot-Swap ORing Controller |
Use Scenario: Replacement for Schottky diode in 48 V telecom rectifier secondary side. IC Role / Device Role / Timing Role: Synchronously rectified output switch, driven by transformer-coupled gate signal referenced to output rail. Use Value: 1.6 V body diode VSD and 57 ns trr reduce forward drop and recovery loss versus 45 V Schottky alternatives. | Use Scenario: Redundant 28 V power supply ORing in avionics subsystems with strict fault containment. IC Role / Device Role / Timing Role: Load switch configured as ideal diode with external gate control for reverse-current blocking. Use Value: 2.0–4.0 V gate threshold ensures reliable turn-on with ±10 % supply tolerance and fast 7 ns turn-on delay for sub-µs fault response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L-1 | 60 V VDS, 50 mΩ RDS(on), TO-220 package | Through-hole mounting; higher RDS(on) increases conduction loss by ~11 % at 16 A | Select when board space allows through-hole and higher voltage margin is required over 55 V |
| IXTP50N055T | 55 V VDS, 5.5 mΩ RDS(on), TO-220 package, logic-level gate | Lower on-resistance but larger footprint and no surface-mount thermal pad; requires 4.5 V min gate drive | Select for ultra-low-loss 5 V logic-driven designs where thermal pad mounting is not feasible |
Compared with STP55NF06L-1 and IXTP50N055T, IRFR4105TRR offers optimal balance of low RDS(on), surface-mount thermal performance, and proven avalanche ruggedness in compact D-PAK - making it preferred for space-constrained, high-reliability industrial power stages.
Availability
IRFR4105TRR is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and embedded DC-DC converters requiring stable component supply and long-term lifecycle support.
Supply support for IRFR4105TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.
The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion - targeting applications demanding low conduction loss, fast switching, and rugged unclamped inductive switching capability.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFR4105TRR supports 19 A continuous drain current at TC = 100°C, derated linearly from 27 A at 25°C using the 0.45 W/°C thermal derating factor - confirming thermal design margins for sealed enclosures with limited airflow.
Is IRFR4105TRR suitable for logic-level gate drive?
No - IRFR4105TRR has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V for full RDS(on) specification; it is not a logic-level MOSFET. For 3.3 V or 5 V microcontroller drive, use IRFR3708 or similar logic-compatible variants.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 1.6 V at 16 A and trr = 57–86 ns, which is slower and higher-drop than most 45 V Schottkys (e.g., 0.55 V, <10 ns). It is adequate for freewheeling in <100 kHz applications but not recommended for high-frequency synchronous rectification without external optimization.
What is the recommended PCB layout for thermal management?
Use ≥1 in² (6.5 cm²) of 2 oz copper connected directly to the exposed drain tab via multiple thermal vias (≥6 × 0.3 mm) to inner ground/power planes. Maintain minimum 0.5 mm clearance from gate trace to prevent coupling, and route source current return under the device to minimize loop inductance.
IRFR4105TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR4105TRR FAQ
1.How can I place an order for IRFR4105TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR4105TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR4105TRR reliable?
The price and inventory of IRFR4105TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105TRR is usually 5 days.
3.What payment methods are accepted for IRFR4105TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR4105TRR?
IRFR4105TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR4105TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR4105TRR?
For technical support, including IRFR4105TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105TRR requirements.
6.How does Aetrix verify that IRFR4105TRR is sourced from the original manufacturer or authorized distributors?
All IRFR4105TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105TRR meets industry standards.
7.What is the process for return or replacement of IRFR4105TRR?
All IRFR4105TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR4105TRR part is unused and in its original packaging.
Return procedure for IRFR4105TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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