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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105Z

Name: IRFR4105Z
Brand: Infineon Technologies
SKU: IRFR4105Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4105Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105Z.pdf

Description:: MOSFET N-CH 55V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4105Z from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade Power MOSFET in D-Pak (TO-252) package, rated for 55V V_DSS, 24.5mΩ R_DS(on) at V_GS = 10V, and 30A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 40ns, t_f = 24ns), and rated repetitive avalanche capability - deployed in engine control units, DC-DC converters, and motor drivers.

For engineers reviewing the IRFR4105Z datasheet, IRFR4105Z pinout, IRFR4105Z application, or IRFR4105Z equivalent, key selection criteria include its low R_DS(on) at 10V gate drive, robust thermal performance (R_θJC = 3.12°C/W), body diode recovery (t_rr = 19–29ns), and AEC-Q101 qualification for under-hood automotive power stages.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining high avalanche ruggedness. Its gate threshold voltage (2.0–4.0V) and low total gate charge (18–27nC) support efficient 10V logic-level drive in high-frequency switching topologies.

The integrated body diode exhibits V_SD ≤ 1.3V at 18A and reverse recovery charge Q_rr of 14–21nC, enabling reliable operation in synchronous rectification and inductive load switching where diode conduction and recovery are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche onset; suitable for 48V automotive systems with transient margin.
R_DS(on)	24.5mΩ max @ V_GS = 10V, T_J = 25°C - Enables <1W conduction loss at 20A, reducing heatsink requirements.
I_D (cont)	30A @ T_C = 25°C - Sustains high-current loads in engine management and battery disconnect circuits.
T_J max	175°C - Supports operation in high-ambient under-hood environments without derating penalties.
E_AS	120mJ (tested) - Confirmed single-pulse avalanche energy rating enables unclamped inductive switching safety.
Q_g	27nC max - Determines gate driver power requirement; compatible with standard 1A peak gate drivers.
t_r/t_f	40ns/24ns - Enables >200kHz PWM operation with minimal switching loss in DC-DC converters.

Pinout & Package

IRFR4105Z is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package measures 6.73 × 6.22 × 2.39 mm and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side return path; electrically tied to PCB ground plane; carries full load current in high-side switch configurations via bootstrap.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <27nC charge for full turn-on; sensitive to ESD (±20V max V_GS).
Pin 3 (Drain)	Power output (D)	Connected to exposed copper pad; primary heat transfer path to PCB; must be routed with minimum trace inductance for switching stability.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - validated for temperature cycling, humidity, and mechanical shock in automotive power modules.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_Jmax - eliminates need for external snubbers in solenoid drivers.
Thermal resistance	R_θJC = 3.12°C/W - enables >25W dissipation with modest PCB copper area, reducing thermal interface complexity.
Body diode performance	t_rr = 19–29ns, Q_rr = 14–21nC - minimizes shoot-through risk and recovery loss in half-bridge motor control.
Low gate charge	Q_gs = 5.3nC, Q_gd = 7.0nC - reduces Miller-induced switching delay and improves gate drive efficiency.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48V Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of fuel injectors in gasoline direct injection systems with 12–48V supply rails and 1–5ms pulse widths.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current; operates in hard-switched mode with <100ns dead-time tolerance.

Use Value: 24.5mΩ R_DS(on) limits conduction loss to <15W at peak 30A, while 175°C rating ensures reliability across under-hood temperature swings.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V buck-boost converter for ADAS power domains.

IC Role / Device Role / Timing Role: High-frequency (200–300kHz) power switch handling bidirectional current during ZVS transitions.

Use Value: Fast t_r/t_f (40ns/24ns) and low C_oss (140pF) reduce switching loss; body diode Q_rr <21nC prevents cross-conduction in phase-shifted topologies.

Electric Power Steering (EPS) Motor Phase Leg

12V Battery Disconnect Load Switch

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor with peak currents up to 25A per phase.

IC Role / Device Role / Timing Role: N-channel high-side/low-side switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: Repetitive avalanche rating allows safe operation during motor regeneration spikes; 175°C T_J supports continuous duty in sealed EPS housings.

Use Scenario: Solid-state replacement for mechanical relay in battery management system (BMS) main contactor circuit.

IC Role / Device Role / Timing Role: Single-pole, normally-open electronic switch isolating 12V starter battery from chassis loads during sleep mode.

Use Value: 55V V_DSS withstands load-dump transients (ISO 7637-2 Pulse 5a); R_DS(on) <25mΩ ensures <0.5V drop at 20A, minimizing standby power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55V, 2.2mΩ R_DS(on) @ 10V, 220A pulsed - lower on-resistance but larger H2PAK-6 package.	Targeted at higher-current traction inverters; not pin-compatible with D-Pak layout.	Select when >50A peak current and ultra-low conduction loss dominate over board space and cost.
ON Semiconductor NTMFS5C670NL	60V, 3.2mΩ R_DS(on) @ 10V, SO-8FL package - higher voltage rating, smaller footprint, higher gate charge (33nC).	Optimized for compact DC-DC modules; lacks AEC-Q101 certification for critical automotive functions.	Prefer for non-safety-critical 12V subsystems where size and cost outweigh qualification requirements.

Compared with STL220N5LF8AG and NTMFS5C670NL, IRFR4105Z delivers balanced trade-offs: D-Pak manufacturability, AEC-Q101 compliance, and proven 30A/55V performance in production ECUs - making it optimal for mid-power automotive switching where qualification, thermal reliability, and layout compatibility are jointly prioritized.

Availability

IRFR4105Z is available at Aetrix Electronics and suitable for engine control units, 48V DC-DC converters, and electric power steering systems requiring stable component supply and long-term automotive-grade availability.

Supply support for IRFR4105Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap device design.

The IRFR4105Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine, transmission, and chassis control systems.

FAQ

Is IRFR4105Z AEC-Q101 qualified?

Yes. IRFR4105Z is explicitly qualified to AEC-Q101 Rev D for stress testing including temperature cycling, humidity bias, and mechanical shock. This qualification is documented in Infineon's official automotive qualification report for the IRFR4105Z, confirming suitability for front-end and under-hood automotive applications.

What is the maximum allowable gate-to-source voltage?

The absolute maximum V_GS is ±20V. Operation beyond this range risks permanent gate oxide damage. For reliable 10V logic-level drive, a gate resistor of 10–24Ω and clamping with a 15V Zener diode is recommended to suppress ringing and overshoot during fast switching.

Can IRFR4105Z be used in parallel configurations?

Yes, but with strict layout and gate drive matching. The device's positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with T_J) enables inherent current sharing. However, matched gate resistors, symmetrical PCB traces, and shared thermal vias beneath drain pads are mandatory to prevent thermal runaway.

Does IRFR4105Z include an integrated Schottky diode?

No. IRFR4105Z incorporates a monolithic body diode formed by the MOSFET's p-n junction, not a discrete Schottky. Its forward voltage is ≤1.3V at 18A, with reverse recovery time of 19–29ns - typical of planar silicon MOSFETs. For Schottky-like performance, a separate co-packaged Schottky or SiC diode is required.

IRFR4105Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105Z FAQ

1.How can I place an order for IRFR4105Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105Z reliable?

The price and inventory of IRFR4105Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105Z is usually 5 days.

3.What payment methods are accepted for IRFR4105Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105Z?

IRFR4105Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105Z?

For technical support, including IRFR4105Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105Z requirements.

6.How does Aetrix verify that IRFR4105Z is sourced from the original manufacturer or authorized distributors?

All IRFR4105Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105Z meets industry standards.

7.What is the process for return or replacement of IRFR4105Z?

All IRFR4105Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105Z part is unused and in its original packaging.

Return procedure for IRFR4105Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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