Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105ZPBF

Name: IRFR4105ZPBF
Brand: Infineon Technologies
SKU: IRFR4105ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR4105ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105ZPBF.pdf

Description:: MOSFET N-CH 55V 30A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,324

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR4105ZPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 30 A continuous drain current at T_C = 25°C, and 24.5 mΩ R_DS(on) at V_GS = 10 V. It features 175°C maximum junction temperature, fast switching (t_r = 40 ns, t_f = 24 ns), and rated repetitive avalanche capability-used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR4105ZPBF datasheet, IRFR4105ZPBF pinout, IRFR4105ZPBF application, or IRFR4105ZPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 27 nC), body diode recovery (Q_rr = 21 nC), and SOA limits under unclamped inductive switching.

Technical Context

This HEXFET® device employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust avalanche ruggedness. Its design integrates a low-inductance D-Pak layout (L_D = 4.5 nH, L_S = 7.5 nH) and optimized gate structure enabling high dV/dt immunity and stable operation up to 175°C junction temperature.

The MOSFET supports hard-switched topologies with validated unclamped inductive avalanche performance (E_AS = 120 mJ, I_AR = 21 A), and its body diode exhibits low forward voltage (V_SD = 1.3 V at 18 A) and fast reverse recovery (t_rr = 29 ns, Q_rr = 21 nC), critical for synchronous buck and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines upper limit for input rail in 48 V systems.
R_DS(on)	24.5 mΩ @ V_GS = 10 V - Conduction loss of 22.1 W at 30 A; enables high-efficiency operation below 100 kHz switching.
I_D (continuous)	30 A @ T_C = 25°C - Thermal limit set by package R_θJC = 3.12 °C/W; derates to 21 A at T_C = 100°C.
Q_g	27 nC - Total gate charge determines driver strength requirement; ~2.7 A peak needed for 10 ns rise time with 10 Ω gate resistor.
t_r/t_f	40 ns / 24 ns - Fast edge rates reduce switching loss but increase EMI risk; requires careful PCB layout and gate drive impedance tuning.
E_AS	120 mJ - Single-pulse avalanche energy rating; allows safe operation during transient overvoltage events without external snubbers.
T_J(max)	175°C - Enables high ambient temperature operation in sealed enclosures or near heat sources without forced cooling.

Pinout & Package

IRFR4105ZPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package has three terminals: Source (S), Drain (D), and Gate (G), arranged in standard D-Pak footprint (lead pitch 2.54 mm, body size 6.73 × 6.22 mm).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current sink terminal	Connected to high-side switch node or output rail; electrically tied to exposed copper pad for low-thermal-resistance heat path to PCB.
Source (S)	Main current source terminal	Reference node for gate drive; internal connection to body diode cathode; must be low-inductance path to minimize shoot-through risk.
Gate (G)	Control input	High-impedance MOS control node; requires <20 V absolute max rating; sensitive to ESD and ringing due to Q_gd = 7.0 nC Miller charge.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	24.5 mΩ at 10 V gate drive reduces conduction loss by >35% vs. legacy 55 V MOSFETs in same package.
175°C junction rating	Enables operation in automotive under-hood or industrial motor control environments without derating penalties.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping in many flyback and relay drivers.
Fast body diode recovery	t_rr = 29 ns and Q_rr = 21 nC minimize reverse recovery loss and cross-conduction in synchronous rectifiers.
Lead-free construction	RoHS-compliant termination and packaging meet IPC-J-STD-020 moisture sensitivity level 1 (MSL1) requirements.

Applications

DC-DC Synchronous Buck Converter

Brushless DC Motor Drive Half-Bridge

Use Scenario: High-efficiency 12 V–48 V input to 3.3 V/5 V/12 V output conversion in telecom power supplies and server VRMs.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: Achieves >95% efficiency at 20 A load with R_DS(on)-driven loss reduction and fast body diode recovery minimizing dead-time losses.

Use Scenario: 24 V–48 V BLDC motor control in power tools and HVAC blowers using 3-phase inverter topology.

IC Role / Device Role: Upper- or lower-leg switching element in half-bridge leg, handling PWM commutation currents up to 30 A peak.

Use Value: 175°C rating sustains continuous operation under stall conditions; avalanche rating absorbs inductive kickback during fault shutdown.

Industrial AC-DC PFC Stage

Automotive LED Headlamp Driver

Use Scenario: Active clamp flyback or transition-mode PFC front-end in industrial power supplies requiring high reliability.

IC Role / Device Role: Switching transistor in boost PFC stage operating at 65–133 kHz with high line-voltage stress.

Use Value: 55 V V_DSS accommodates 400 V DC bus + 20% surge; low Q_g enables efficient gate driving with integrated controllers like ICE2PCS01.

Use Scenario: Constant-current LED driver for adaptive front lighting systems (AFS) in passenger vehicles.

IC Role / Device Role: High-side current regulator switch controlling 1–5 A LED strings with PWM dimming.

Use Value: Lead-free D-Pak meets automotive AEC-Q101 stress test requirements; 175°C rating ensures survival during engine-bay thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 50 A I_D, 14 mΩ R_DS(on), TO-220 package	Higher current rating but through-hole mounting; lacks D-Pak thermal interface and compact footprint	Preferred for higher-power designs where board space is not constrained and heatsinking via bolt-down is available.
IXTP50N055T	55 V V_DSS, 50 A I_D, 11 mΩ R_DS(on), TO-220AB package	Lower R_DS(on) and higher current, but larger package and no avalanche rating specified	Chosen when lowest conduction loss is prioritized over ruggedness and surface-mount assembly compatibility.

Compared with STP55NF06L and IXTP50N055T, IRFR4105ZPBF trades some R_DS(on) and current headroom for superior thermal interface (D-Pak), certified repetitive avalanche, and RoHS-compliant lead-free finish-making it optimal for space-constrained, high-reliability industrial and automotive surface-mount designs.

Availability

IRFR4105ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply across extended production lifecycles.

Supply support for IRFR4105ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor solutions, and automotive electronics, with core expertise in silicon and wide-bandgap device innovation.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-ruggedness switching in industrial power conversion and motor control-emphasizing low R_DS(on), fast switching, and reliable avalanche performance in compact packages.

FAQ

Is IRFR4105ZPBF suitable for 48 V battery-powered systems?

Yes. With 55 V V_DSS, it supports nominal 48 V systems including 14 V automotive (with load dump protection) and 48 V mild-hybrid architectures. Its 175°C rating ensures reliability under sustained high-temperature operation common in battery enclosures and motor controllers.

What is the recommended gate resistor value for hard-switched operation?

A 10 Ω series gate resistor is typical for balancing switching speed and EMI control. With Q_g = 27 nC and 12 V drive, this yields ~2.7 A peak gate current and ~10 ns effective rise time-verified in IR's application note AN-1001 for D-Pak MOSFETs in buck converters.

Does IRFR4105ZPBF have a specified avalanche SOA curve?

Yes. Figures 12a–12c and 15–16 in the official datasheet define unclamped inductive avalanche limits versus pulse width and starting junction temperature. Repetitive avalanche is permitted as long as T_J ≤ 175°C and E_AR ≤ 30 mJ per pulse at 1% duty cycle.

Can IRFR4105ZPBF replace IRFR3710ZPBF in existing designs?

No direct drop-in replacement: IRFR3710ZPBF is 100 V rated with 23 mΩ R_DS(on). IRFR4105ZPBF offers lower voltage rating (55 V) but improved thermal resistance (R_θJC = 3.12 vs. 3.5 °C/W) and faster switching. Redesign verification is required for voltage margin and gate drive timing.

IRFR4105ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105ZPBF FAQ

1.How can I place an order for IRFR4105ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105ZPBF reliable?

The price and inventory of IRFR4105ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105ZPBF is usually 5 days.

3.What payment methods are accepted for IRFR4105ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105ZPBF?

IRFR4105ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105ZPBF?

For technical support, including IRFR4105ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105ZPBF requirements.

6.How does Aetrix verify that IRFR4105ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFR4105ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105ZPBF meets industry standards.

7.What is the process for return or replacement of IRFR4105ZPBF?

All IRFR4105ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105ZPBF part is unused and in its original packaging.

Return procedure for IRFR4105ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.