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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105ZTR

Name: IRFR4105ZTR
Brand: Infineon Technologies
SKU: IRFR4105ZTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4105ZTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105ZTR.pdf

Description:: MOSFET N-CH 55V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4105ZTR from Infineon Technologies is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 24.5 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 40 ns, t_f = 24 ns), and rated repetitive avalanche capability - deployed in engine control units, DC-DC converters, and high-side load switches.

For engineers reviewing the IRFR4105ZTR datasheet, IRFR4105ZTR pinout, IRFR4105ZTR application, or IRFR4105ZTR equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust thermal performance (R_θJC = 3.12°C/W), body diode recovery (Q_rr = 14–21 nC), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize conduction loss per die area while maintaining ruggedness against unclamped inductive switching. Its gate charge profile (Q_g = 18–27 nC, Q_gd = 7.0 nC) supports efficient high-frequency PWM operation up to several hundred kHz in synchronous buck stages.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 18 A and fast reverse recovery (t_rr = 19–29 ns, Q_rr = 14–21 nC), enabling reliable freewheeling in automotive motor drives and bidirectional power conversion topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Withstands transient overvoltage up to 55 V in 12 V/24 V automotive systems without breakdown.
R_DS(on)	24.5 mΩ max @ V_GS = 10 V - Enables ≤0.74 W conduction loss at 30 A, critical for thermally constrained ECUs.
I_D (continuous)	30 A @ T_C = 25°C - Supports high-current loads such as fuel injectors, radiator fans, and solenoid drivers.
T_J max	175°C - Allows operation in under-hood environments where ambient exceeds 125°C with margin.
E_AS	120 mJ (tested) - Sustains single-pulse inductive energy during load dump or relay de-energization events.
Q_g	27 nC max - Determines gate driver strength requirement; compatible with standard 1–2 A peak gate drivers.
t_r/t_f	40 ns / 24 ns - Enables <500 kHz switching in DC-DC converters while limiting EMI generation.

Pinout & Package

IRFR4105ZTR uses the surface-mount D-Pak (TO-252) package with exposed drain pad for enhanced thermal dissipation. The three-terminal configuration supports high-current PCB routing and direct heatsinking via the drain tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Internally connected to metal tab; must be soldered to large copper pour or heatsink for R_θJC = 3.12°C/W performance.
Source (S)	Reference node for gate drive and current return	Low-inductance connection required; internal source inductance L_S = 7.5 nH affects switching ringing.
Gate (G)	Control input for channel modulation	High-impedance CMOS-compatible input; total gate charge Q_g = 27 nC defines driver sizing and rise time.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - Validated for temperature cycling, humidity, and mechanical shock per automotive reliability standards.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_Jmax - Eliminates need for external snubbers in solenoid and relay drive circuits.
Ultra-low on-resistance	24.5 mΩ R_DS(on) at 10 V - Reduces conduction loss by >35% vs. legacy 55 V MOSFETs in same package, improving system efficiency.
Fast body diode recovery	Q_rr = 14–21 nC, t_rr = 19–29 ns - Minimizes reverse recovery loss and voltage overshoot in synchronous rectification and H-bridge motor control.
Thermal robustness	175°C T_J max + R_θJC = 3.12°C/W - Enables compact layout in space-constrained modules without forced air cooling.

Applications

Engine Control Unit (ECU) High-Side Switch

Automotive DC-DC Converter Primary Switch

Use Scenario: Controlling 12 V fuel injector or ignition coil with microsecond-level timing precision in gasoline/diesel engines.

IC Role / Device Role / Timing Role: High-side N-channel switch driven by isolated gate driver; handles 30 A pulsed loads with <100 ns turn-off delay.

Use Value: 24.5 mΩ R_DS(on) limits self-heating during 10 ms pulses, while 175°C rating ensures reliability across -40°C to +150°C ambient.

Use Scenario: Primary-side switching element in 12 V → 5 V/3.3 V buck converter powering ADAS sensors and infotainment SoCs.

IC Role / Device Role / Timing Role: Fast-switching power stage operating at 300–500 kHz; synchronized with controller IC via gate driver.

Use Value: Low Q_g (27 nC) and Q_gd (7.0 nC) reduce switching loss; C_oss = 140 pF enables zero-voltage switching (ZVS) assist in resonant designs.

Electric Power Steering (EPS) Motor Phase Leg

Body Control Module (BCM) Load Driver

Use Scenario: Half-bridge phase leg in 24 V EPS motor inverter, delivering up to 40 A peak current with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter; conducts body-diode freewheeling current during dead-time.

Use Value: Fast t_rr (19–29 ns) and low Q_rr (14–21 nC) suppress voltage spikes during commutation, reducing EMI filter size.

Use Scenario: Driving high-current loads such as HVAC blower motors, headlight relays, and window lift actuators in BCM subassemblies.

IC Role / Device Role / Timing Role: Robust high-side load switch with integrated protection; controlled via CAN/LIN interface through local microcontroller.

Use Value: Rated repetitive avalanche withstands inductive kickback from 200 W motors; 175°C rating prevents thermal shutdown during sustained 30 A operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N5LF6AG	55 V, 1.8 mΩ R_DS(on), 100 A I_D, PowerFLAT 5x6 package, R_θJA = 25°C/W	Higher current capacity but larger footprint; requires more PCB area and higher gate drive current (Q_g = 72 nC)	Preferred for new designs needing lower R_DS(on) and higher I_D, provided layout accommodates larger package and gate driver can supply 2.5 A peak.
ON Semiconductor NTMFS5C670NL	60 V, 3.2 mΩ R_DS(on), 60 A I_D, SO-8FL package, R_θJC = 2.5°C/W	Lower R_DS(on) and better thermal resistance, but not AEC-Q101 qualified; limited to non-safety-critical subsystems	Acceptable for cabin electronics or infotainment power rails where automotive qualification is not mandated.

Compared with STL100N5LF6AG and NTMFS5C670NL, IRFR4105ZTR offers optimal balance of AEC-Q101 compliance, proven D-Pak thermal reliability, and gate drive compatibility with legacy automotive gate drivers - making it ideal for cost-sensitive, volume-production ECU and BCM modules.

Availability

IRFR4105ZTR is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, and body control modules requiring stable component supply across extended production lifecycles.

Supply support for IRFR4105ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

The HEXFET® Power MOSFET product line delivers rugged, high-efficiency silicon solutions for automotive powertrain, chassis, and body electronics - engineered specifically for harsh-environment reliability and AEC-Q101 compliance.

FAQ

Is IRFR4105ZTR AEC-Q101 qualified?

Yes. IRFR4105ZTR is explicitly qualified to AEC-Q101 Rev D for stress testing including temperature cycling, highly accelerated life testing (HALT), and mechanical shock. This qualification is documented in Infineon's official automotive qualification report for the IRFR4105Z family, confirming suitability for engine bay and transmission control applications.

What is the maximum allowable gate-source voltage for IRFR4105ZTR?

The absolute maximum V_GS rating is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable 10 V logic-level drive, a gate resistor of 10–24 Ω and clamping zener (e.g., 15 V) are recommended to suppress ringing-induced overshoot during fast switching in noisy automotive environments.

Can IRFR4105ZTR replace IRFR3710 in existing designs?

No - IRFR3710 is a 100 V, 55 mΩ device with different R_DS(on), gate charge, and safe operating area. While both are D-Pak N-channel MOSFETs, substituting IRFR4105ZTR (55 V, 24.5 mΩ) risks overvoltage failure in 100 V circuits. Cross-replacement requires full revalidation of SOA, avalanche capability, and thermal margins.

Does IRFR4105ZTR include an integrated ESD protection diode on the gate?

No. IRFR4105ZTR does not integrate gate ESD protection. Its gate oxide is rated for human-body-model (HBM) ESD up to 2 kV per JEDEC JESD22-A114, but external gate protection (e.g., 10 kΩ series resistor + 15 V zener clamp) is required in automated assembly and field-replaceable modules to prevent electrostatic damage during handling or board insertion.

IRFR4105ZTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105ZTR FAQ

1.How can I place an order for IRFR4105ZTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105ZTR reliable?

The price and inventory of IRFR4105ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105ZTR is usually 5 days.

3.What payment methods are accepted for IRFR4105ZTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105ZTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105ZTR?

IRFR4105ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105ZTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105ZTR?

For technical support, including IRFR4105ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105ZTR requirements.

6.How does Aetrix verify that IRFR4105ZTR is sourced from the original manufacturer or authorized distributors?

All IRFR4105ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105ZTR meets industry standards.

7.What is the process for return or replacement of IRFR4105ZTR?

All IRFR4105ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105ZTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105ZTR part is unused and in its original packaging.

Return procedure for IRFR4105ZTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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