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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105ZTRLPBF

Name: IRFR4105ZTRLPBF
Brand: Infineon Technologies
SKU: IRFR4105ZTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4105ZTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105ZTRLPBF.pdf

Description:: MOSFET N-CH 55V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4105ZTRLPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DSS, 24.5 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 40 ns, t_f = 24 ns), and rated repetitive avalanche capability - used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR4105ZTRLPBF datasheet, IRFR4105ZTRLPBF pinout, IRFR4105ZTRLPBF application, or IRFR4105ZTRLPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 27 nC), body diode recovery (Q_rr = 21 nC), and SOA-limited pulse handling under unclamped inductive switching.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining robust avalanche ruggedness. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard 5 V and 10 V logic-level drive, and its low C_iss (740 pF) and C_rss (74 pF) enable high-frequency operation with reduced Miller effect.

The integrated body diode exhibits V_SD = 1.3 V at 18 A and fast reverse recovery (t_rr = 29 ns, Q_rr = 21 nC), making it suitable for hard-switched topologies where diode conduction occurs during dead time. Thermal design is enabled by R_θJC = 3.12°C/W and R_θJA = 40°C/W (PCB mount).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines upper limit for bus voltage in buck, flyback, and half-bridge designs.
R_DS(on)	24.5 mΩ @ V_GS = 10 V, T_J = 25°C - Directly determines I²R conduction loss; increases to ~2.5× at 175°C per Fig.10.
I_D (cont)	30 A @ T_C = 25°C - Continuous current rating limited by package thermal resistance; derates to 21 A at T_C = 100°C.
Q_g	27 nC - Total gate charge required for full turn-on; sets minimum gate driver current and switching loss in PWM stages.
E_AS	120 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive load turn-off transients without external snubbers.
t_r/t_f	40 ns / 24 ns - Rise/fall times measured at V_DD = 44 V, I_D = 18 A, R_G = 24.5 Ω; constrains minimum practical switching frequency and EMI profile.
T_J(max)	175°C - Maximum junction temperature; allows operation in high-ambient industrial environments with appropriate heatsinking.

Pinout & Package

IRFR4105ZTRLPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (D), Source (S), and Gate (G), arranged in a single-row configuration with the drain tab electrically connected to the internal die backside.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal (high-side switch node)	Electrically tied to PCB copper pour for heat dissipation; must be isolated from other nets unless referenced to same potential.
Source	Reference node for gate drive and current return path	Connected to power ground or low-side switch source; forms common reference for V_GS control loop.
Gate	Control input for channel modulation	High-impedance capacitive node requiring low-inductance gate driver routing; sensitive to ringing due to Q_gd = 7.0 nC.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	24.5 mΩ at 10 V drive enables <1 W conduction loss at 20 A, reducing heatsink requirements in compact power stages.
175°C junction rating	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor controllers) without derating penalty.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax; eliminates need for external avalanche clamps in relay drivers and solenoid controls.
Fast body diode recovery	Q_rr = 21 nC and t_rr = 29 ns reduce switching losses and voltage overshoot during commutation in synchronous rectifiers and H-bridges.

Applications

DC-DC Synchronous Buck Converter

Brushed DC Motor Drive

Use Scenario: High-efficiency 12 V input to 3.3/5 V output conversion in telecom and server power supplies.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95% efficiency at 20 A load due to 24.5 mΩ R_DS(on) and low Q_rr-driven shoot-through margin.

Use Scenario: Bidirectional 24 V brushed motor control in industrial actuators and robotics.

IC Role / Device Role: Half-bridge low-side switch with integrated body diode conducting freewheeling current.

Use Value: Repetitive avalanche rating handles inductive kickback during PWM reversal without snubber networks.

AC-DC PFC Front-End

LED Driver Switching Stage

Use Scenario: Boost-type active PFC stage in 300 W offline SMPS.

IC Role / Device Role: Main switching FET operating at 65–100 kHz with 55 V blocking requirement.

Use Value: Low C_oss (140 pF) and Q_gd/Q_gs ratio minimize switching loss and improve light-load efficiency.

Use Scenario: Constant-current LED driver for architectural lighting with 48 V bus.

IC Role / Device Role: Primary switch in buck-derived constant-current regulator driving 10–20 A strings.

Use Value: 30 A continuous rating and 175°C T_J support high ambient operation in enclosed luminaires without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR4105PbF	Same die, but in smaller D2PAK-3L (TO-263) package; R_θJA = 45°C/W (PCB mount), slightly higher R_DS(on) tolerance (26 mΩ max).	Preferred for space-constrained layouts where footprint reduction outweighs thermal margin loss.	Select when board area is critical and case temperature remains ≤85°C.
STP30NF55	55 V, 30 A, R_DS(on) = 28 mΩ max; higher Q_g (45 nC); no published repetitive avalanche rating.	Suitable for non-avalanche-critical linear or soft-switched applications only.	Choose only if avalanche stress is absent and gate drive strength permits higher Q_g.

Compared with IRFR4105ZTRLPBF, IRFL4105PbF trades thermal performance for size, while STP30NF55 lacks validated avalanche ruggedness - making the original preferred for inductive switching reliability and thermal headroom in production-grade power stages.

Availability

IRFR4105ZTRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply, RoHS-compliant lead-free packaging, and long-term industrial lifecycle support.

Supply support for IRFR4105ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET® innovation in power MOSFETs.

This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and renewable energy systems.

FAQ

Is IRFR4105ZTRLPBF logic-level compatible?

No - its gate threshold voltage ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) of 24.5 mΩ. Driving with 5 V logic yields significantly higher on-resistance (~60–80 mΩ), increasing conduction loss and thermal stress.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous DC SOA is limited to 21 A at V_DS ≤ 10 V per Fig.9. For pulsed operation, the 10 ms single-pulse SOA boundary drops to ~15 A at 40 V due to thermal impedance constraints shown in Fig.8.

Does IRFR4105ZTRLPBF require a gate resistor for stability?

Yes - a series gate resistor (typically 5–25 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (C_gd = 74 pF) interacting with PCB trace inductance. Without it, ringing can exceed V_GS absolute maximum (±20 V) and cause erratic switching or failure.

Can the body diode be used for continuous freewheeling in a synchronous buck?

Yes - the integral body diode is rated for 30 A continuous source current (I_S) and 120 A pulsed (I_SM). However, its V_SD = 1.3 V forward drop causes higher loss than an external Schottky; best practice is to actively drive the FET during freewheeling to minimize conduction loss.

IRFR4105ZTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105ZTRLPBF FAQ

1.How can I place an order for IRFR4105ZTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105ZTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105ZTRLPBF reliable?

The price and inventory of IRFR4105ZTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105ZTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR4105ZTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105ZTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105ZTRLPBF?

IRFR4105ZTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105ZTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105ZTRLPBF?

For technical support, including IRFR4105ZTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105ZTRLPBF requirements.

6.How does Aetrix verify that IRFR4105ZTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR4105ZTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105ZTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR4105ZTRLPBF?

All IRFR4105ZTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105ZTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105ZTRLPBF part is unused and in its original packaging.

Return procedure for IRFR4105ZTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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