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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105ZTRPBF

Name: IRFR4105ZTRPBF
Brand: Infineon Technologies
SKU: IRFR4105ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4105ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105ZTRPBF.pdf

Description:: MOSFET N-CH 55V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4105ZTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DS, 24.5 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 40 ns, t_f = 24 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the IRFR4105ZTRPBF datasheet, IRFR4105ZTRPBF pinout, IRFR4105ZTRPBF application, or IRFR4105ZTRPBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, body diode recovery performance (t_rr = 19–29 ns, Q_rr = 14–21 nC), thermal robustness (R_θJC = 3.12°C/W), and D-Pak mounting compatibility with PCB heatsinking.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining rugged unclamped inductive switching behavior. Its gate charge profile (Q_g = 18–27 nC, Q_gd = 7.0 nC) supports efficient hard-switching up to several hundred kHz in synchronous buck topologies.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at 18 A) and controlled reverse recovery, enabling reliable operation in freewheeling paths without external Schottky supplementation in medium-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on)	24.5 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1 W conduction loss at 20 A, critical for thermal management
I_D (cont)	30 A @ T_C = 25°C - Supports high-current load switching with standard D-Pak heatsinking
Q_g	27 nC max - Determines gate driver power requirement and switching loss trade-off
t_r/t_f	40 ns / 24 ns - Enables clean edge transitions in 200–500 kHz SMPS designs
E_AS	120 mJ (tested) - Allows safe energy absorption during inductive turn-off transients
T_J max	175°C - Permits operation in thermally constrained industrial environments

Pinout & Package

IRFR4105ZTRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal conduction to PCB copper. The package has three terminals: Source (S), Drain (D), and Gate (G).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current output terminal	Internally connected to exposed metal pad; must be soldered to large copper pour for thermal dissipation
Source (S)	Reference node for gate drive and current return	Common connection point for gate driver ground and load return path
Gate (G)	Control input for channel modulation	High-impedance node requiring low-inductance gate loop; sensitive to ringing due to Q_gd = 7.0 nC

Key Features

Feature	Design Value
Ultra-low R_DS(on)	24.5 mΩ enables <0.5 W conduction loss at 15 A, reducing heatsink requirements
175°C junction rating	Supports sustained operation in sealed enclosures or high-ambient industrial settings
Repetitive avalanche rated	Validated E_AS = 120 mJ allows repeated inductive switching without derating
Fast body diode recovery	t_rr = 19 ns and Q_rr = 14 nC minimize cross-conduction loss in synchronous rectification
Lead-free construction	RoHS-compliant D-Pak package meets IPC/JEDEC J-STD-020 reflow profiles

Applications

Motor Drive H-Bridge Leg

DC-DC Synchronous Buck Converter

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controllers driving 10–20 A loads.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheel current during PWM off-time.

Use Value: 24.5 mΩ R_DS(on) limits I²R loss to ≤1 W at 20 A, while 175°C rating ensures reliability under stall conditions.

Use Scenario: High-efficiency 12 V → 3.3 V/5 V point-of-load converter in industrial PLC modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Body diode V_SD ≤ 1.3 V and Q_rr = 14 nC enable >92% efficiency at 15 A output with minimal shoot-through risk.

Uninterruptible Power Supply (UPS) Inverter Stage

Automotive HVAC Blower Control

Use Scenario: Low-side switch in half-bridge inverter converting 48 V battery to 120 VAC for backup lighting systems.

IC Role / Device Role / Timing Role: Fast-switching power stage handling 55 V bus with repetitive unclamped inductive energy during fault events.

Use Value: Rated E_AS = 120 mJ and validated avalanche capability eliminate need for external snubbers in cost-sensitive UPS designs.

Use Scenario: PWM-controlled blower fan driver in 12 V automotive cabin systems with peak currents up to 30 A.

IC Role / Device Role / Timing Role: High-current N-channel switch interfacing microcontroller GPIO via gate driver IC.

Use Value: D-Pak thermal resistance (R_θJC = 3.12°C/W) allows direct PCB copper cooling, eliminating discrete heatsinks in space-constrained dash modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR4105PbF	Same die, but in smaller I-Pak (TO-220AB) package; R_θJC = 2.5°C/W, higher thermal mass	Better suited for through-hole prototyping or lower-frequency (<100 kHz) applications where PCB area is less constrained	Select when mechanical mounting flexibility or legacy footprint compatibility outweighs surface-mount density needs
STP55NF06L	60 V V_DS, 11 mΩ R_DS(on), but slower switching (t_r = 80 ns) and no rated avalanche energy	Higher conduction efficiency at low frequency, but unsuitable for high-dV/dt or inductive fault scenarios	Prefer only in fixed-frequency, non-avalanche-prone applications where lowest R_DS(on) dominates

Compared with IRFR4105ZTRPBF, IRFR4105ZTRPBF offers superior thermal interface via D-Pak and guaranteed avalanche robustness, while IRLR4105PbF trades packaging convenience for slightly better thermal resistance, and STP55NF06L sacrifices switching speed and fault tolerance for lower on-resistance.

Availability

IRFR4105ZTRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across extended production lifecycles.

Supply support for IRFR4105ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to develop, manufacture, and support the HEXFET® portfolio of power MOSFETs for industrial and automotive markets.

The HEXFET® Power MOSFET product line targets high-efficiency power conversion systems demanding low conduction loss, fast switching, and rugged transient handling-especially in motor control, power supplies, and battery-powered equipment.

FAQ

What is the maximum gate-source voltage rating for IRFR4105ZTRPBF?

The absolute maximum V_GS is ±20 V. Operation beyond this risks irreversible gate oxide damage. Recommended gate drive is +10 V to fully enhance the channel while maintaining margin against overshoot; gate drivers with clamping or active Miller control are advised in high-dV/dt environments.

Does IRFR4105ZTRPBF have a specified avalanche energy rating for repetitive operation?

Yes-repetitive avalanche energy (E_AR) is characterized in Figure 16 of the datasheet, showing 25 mJ at 1% duty cycle and 25°C starting junction temperature. Safe repetitive avalanche requires limiting average power dissipation using Z_thJC curves and ensuring T_J does not exceed 175°C.

Can IRFR4105ZTRPBF be used in parallel configurations?

Yes, but with careful layout: matched gate resistors (≤1 Ω), symmetrical source inductance, and shared thermal plane are required. The positive R_DS(on) temperature coefficient (Fig. 10) provides inherent current sharing above ~100°C, but initial imbalance at room temperature must be mitigated by gate drive tuning.

Is the body diode in IRFR4105ZTRPBF suitable for synchronous rectification?

Yes-the body diode is optimized for fast recovery (t_rr = 19–29 ns, Q_rr = 14–21 nC) and low forward drop (V_SD ≤ 1.3 V at 18 A). It performs reliably in synchronous buck topologies up to ~300 kHz, though external Schottky may still be preferred in ultra-high-efficiency or high-frequency (>1 MHz) designs.

IRFR4105ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105ZTRPBF FAQ

1.How can I place an order for IRFR4105ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105ZTRPBF reliable?

The price and inventory of IRFR4105ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR4105ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105ZTRPBF?

IRFR4105ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105ZTRPBF?

For technical support, including IRFR4105ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105ZTRPBF requirements.

6.How does Aetrix verify that IRFR4105ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR4105ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR4105ZTRPBF?

All IRFR4105ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105ZTRPBF part is unused and in its original packaging.

Return procedure for IRFR4105ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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