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Infineon Technologies IRFR4105ZTRR
- Part No.:
- IRFR4105ZTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR4105ZTRR.pdf
- Description:
- MOSFET N-CH 55V 30A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,185
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Product details
Overview
IRFR4105ZTRR from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V VDSS, 30 A continuous drain current at TC = 25°C, and 24.5 mΩ RDS(on) at VGS = 10 V. It features 175°C maximum junction temperature, fast switching (tr = 40 ns, tf = 24 ns), and rated repetitive avalanche capability - deployed in engine control units, DC-DC converters, and motor drivers where high reliability under thermal stress is critical.
For engineers reviewing the IRFR4105ZTRR datasheet, IRFR4105ZTRR pinout, IRFR4105ZTRR application, or IRFR4105ZTRR equivalent, key selection criteria include its 24.5 mΩ on-resistance at 10 V gate drive, 175°C thermal rating, body diode reverse recovery charge (Qrr = 14–21 nC), unclamped inductive switching robustness, and D-Pak thermal performance (RθJC = 3.12°C/W).
Technical Context
This MOSFET employs advanced silicon processing to minimize RDS(on) per unit die area while maintaining ruggedness against repetitive avalanche events up to TJmax. Its gate threshold voltage (VGS(th) = 2.0–4.0 V) supports standard 10 V logic-level drive, and its low Qgd/Qgs ratio (7.0/5.3 nC) enables fast, controllable turn-on/turn-off transitions.
The integrated body diode exhibits VSD = 1.3 V at IS = 18 A and trr = 19–29 ns, enabling efficient freewheeling in synchronous buck and half-bridge topologies. Thermal design is supported by validated transient impedance curves (Fig. 11) and linear derating (0.32 W/°C above 25°C case temperature).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V automotive bus and 36 V industrial power rails. |
| RDS(on) @ VGS = 10 V | 24.5 mΩ max - Determines conduction loss: ~22 W dissipation at 30 A, requiring heatsinking or PCB copper area for thermal management. |
| ID @ TC = 25°C | 30 A continuous - Validated silicon-limited current with 10 V gate drive; derates to 21 A at TC = 100°C. |
| TJ max | 175°C - Enables operation in under-hood environments without thermal shutdown; supports extended lifetime at elevated ambient temperatures. |
| Qg | 27 nC max - Gate charge defining driver strength requirement; 24.5 Ω gate resistor yields ~10 ns turn-on delay (td(on)) in typical test circuit. |
| EAS (tested) | 120 mJ - Single-pulse avalanche energy rating confirms robustness during inductive load switching faults without device failure. |
| trr / Qrr | 29 ns / 21 nC - Body diode recovery metrics critical for minimizing switching loss and voltage overshoot in hard-switched converters. |
Pinout & Package
IRFR4105ZTRR uses the D-Pak (TO-252) surface-mount package with exposed drain pad for enhanced thermal conduction. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is optimized for PCB copper thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or low-side switch node; carries full load current and body diode return path. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate; requires <200 nA leakage current handling and controlled slew rate to avoid ringing. |
| Pin 3 (Drain) | Power output (D) | High-current drain connection tied to exposed copper pad; primary heat path to PCB; electrically connected to source via body diode. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 24.5 mΩ @ 10 V ensures <0.75 W conduction loss at 5 A, reducing thermal burden in compact automotive modules. |
| 175°C junction rating | Enables sustained operation in engine bay environments (e.g., >125°C ambient) without derating or forced cooling. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to TJmax, eliminating need for external snubbers in solenoid drivers. |
| Fast body diode | trr = 19–29 ns and Qrr = 14–21 nC reduce cross-conduction loss and EMI in synchronous rectification applications. |
| Thermally enhanced D-Pak | RθJC = 3.12°C/W allows >20 W power dissipation with minimal ΔT between junction and PCB copper plane. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-speed, high-reliability switching of 12 V fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current; operates at 1–10 Hz pulse frequency with <100 µs on-time. Use Value: 175°C rating prevents thermal shutdown during prolonged idling; 24.5 mΩ RDS(on) minimizes coil heating and improves duty cycle accuracy. |
Use Scenario: Primary-side switch in 48 V-to-12 V bidirectional DC-DC converter for 48 V mild hybrid vehicles. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: Low Qgd/Qgs ratio enables clean zero-voltage switching transition; fast trr reduces dead-time losses and improves efficiency >95%. |
| Electric Power Steering (EPS) Motor Phase Leg | Industrial BLDC Motor Inverter Half-Bridge |
|
Use Scenario: High-current phase leg switch in 3-phase inverter driving EPS assist motor (up to 30 A peak). IC Role / Device Role / Timing Role: N-channel high-side/low-side switch in 60–100 kHz PWM-driven inverter with bootstrap gate drive. Use Value: Repetitive avalanche rating absorbs inductive kickback during fault conditions; RθJC = 3.12°C/W enables direct mounting to aluminum heatsink. |
Use Scenario: Half-bridge switch in 24 V industrial BLDC motor controller for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter with gate drive referenced to source; handles 30 A continuous with 100% duty cycle. Use Value: 24.5 mΩ RDS(on) limits conduction loss to <2.2 W at 30 A, enabling fanless enclosure design in IP54-rated enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N5LF8AG | RDS(on) = 2.8 mΩ @ 10 V (lower), but VDSS = 50 V (lower margin); TJmax = 175°C; Qg = 42 nC (higher). | Better conduction efficiency below 40 V, but reduced voltage safety margin in 48 V transients; higher gate charge increases driver complexity. | Select when lowest RDS(on) dominates and system clamping ensures VDS ≤ 45 V. |
| ON Semiconductor NTMFS5C673NL | RDS(on) = 23.5 mΩ @ 10 V (slightly lower), VDSS = 60 V (higher), TJmax = 175°C, Qg = 22 nC (lower). | Higher voltage headroom improves surge immunity; lower Qg eases gate drive design; same thermal rating and package footprint. | Preferred for new designs needing improved 60 V transient tolerance and faster switching with reduced driver loading. |
Compared with IRFR4105ZTRR, STL120N5LF8AG trades voltage margin for ultra-low on-resistance, while NTMFS5C673NL offers superior 60 V rating and lower gate charge - both retain 175°C operation but differ in thermal layout sensitivity and driver requirements.
Availability
IRFR4105ZTRR is available at Aetrix Electronics and suitable for automotive engine control units, 48 V DC-DC converters, electric power steering inverters, and industrial BLDC motor drives requiring stable component supply across extended product lifecycles.
Supply support for IRFR4105ZTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon-based power devices.
IRFR4105ZTRR belongs to the legacy HEXFET® automotive MOSFET product line, engineered specifically for high-reliability, thermally demanding automotive subsystems including engine management, chassis control, and electrified powertrain interfaces.
FAQ
Is IRFR4105ZTRR suitable for 48 V automotive battery systems?
Yes. With a 55 V VDSS rating and 175°C junction temperature capability, IRFR4105ZTRR supports nominal 48 V systems including load dump transients up to 60 V when used with appropriate clamping. Its RDS(on) remains stable across temperature, ensuring predictable conduction loss in under-hood environments.
What is the recommended gate resistor value for switching at 100 kHz?
A 10–24.5 Ω non-inductive gate resistor is recommended to balance switching speed and EMI. At 24.5 Ω, td(on) ≈ 10 ns and tr ≈ 40 ns per datasheet Fig. 18b, yielding total switching time <100 ns - sufficient for 100 kHz operation with >50% minimum off-time and controlled dv/dt.
Does IRFR4105ZTRR require a heatsink in a 30 A continuous application?
Yes. At 30 A and 24.5 mΩ, conduction loss is ~22 W. With RθJC = 3.12°C/W and typical PCB thermal resistance of ~25°C/W, junction temperature exceeds 175°C without supplemental heatsinking. A 10 cm² copper pour plus 10 K/W heatsink keeps TJ < 150°C at 25°C ambient.
Can IRFR4105ZTRR replace IRFR3710Z in existing designs?
No. IRFR3710Z has VDSS = 100 V and RDS(on) = 23 mΩ, but differs in gate charge (Qg = 120 nC vs. 27 nC) and SOA curve. Substituting IRFR4105ZTRR risks overvoltage failure in 100 V circuits and alters gate drive timing - redesign validation is required.
IRFR4105ZTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 24.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR4105ZTRR FAQ
1.How can I place an order for IRFR4105ZTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR4105ZTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR4105ZTRR reliable?
The price and inventory of IRFR4105ZTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105ZTRR is usually 5 days.
3.What payment methods are accepted for IRFR4105ZTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105ZTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR4105ZTRR?
IRFR4105ZTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR4105ZTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR4105ZTRR?
For technical support, including IRFR4105ZTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105ZTRR requirements.
6.How does Aetrix verify that IRFR4105ZTRR is sourced from the original manufacturer or authorized distributors?
All IRFR4105ZTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105ZTRR meets industry standards.
7.What is the process for return or replacement of IRFR4105ZTRR?
All IRFR4105ZTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105ZTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR4105ZTRR part is unused and in its original packaging.
Return procedure for IRFR4105ZTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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