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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4105ZTRRPBF

Name: IRFR4105ZTRRPBF
Brand: Infineon Technologies
SKU: IRFR4105ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4105ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4105ZTRRPBF.pdf

Description:: MOSFET N-CH 55V 30A DPAK

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Product details

Overview

IRFR4105ZTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55 V V_DS, 24.5 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 40 ns, t_f = 24 ns), and rated repetitive avalanche capability - used in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR4105ZTRRPBF datasheet, IRFR4105ZTRRPBF pinout, IRFR4105ZTRRPBF application, or IRFR4105ZTRRPBF equivalent, key selection criteria include on-resistance vs. thermal derating, gate charge (Q_g = 27 nC), body diode recovery (Q_rr = 21 nC), and SOA limits under unclamped inductive switching.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining robust avalanche performance. Its 175°C T_J(max) enables high-power density designs without forced cooling in ambient-limited environments.

Designed for hard-switched topologies, it delivers low conduction loss (R_DS(on) = 19–24.5 mΩ) and controlled switching transitions (Q_gd/Q_gs = 7.0/5.3 nC), reducing EMI and improving efficiency in 12–48 V input systems such as industrial SMPS and BLDC gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports 48 V nominal bus systems with 15% margin for transients
R_DS(on)	24.5 mΩ max @ V_GS = 10 V, T_J = 25°C - enables ≤0.75 W conduction loss at 30 A
I_D (cont)	30 A @ T_C = 25°C - requires heatsinking above ~15 A in PCB-mount configuration
Q_g	27 nC max - determines gate driver current requirement (~1.35 A peak for 20 ns rise)
E_AS	120 mJ (tested) - allows safe operation under unclamped inductive turn-off up to I_AS = 18 A
T_J(max)	175°C - extends usable thermal headroom beyond standard 150°C MOSFETs
Q_rr	21 nC max - critical for minimizing shoot-through risk in synchronous buck output stages

Pinout & Package

IRFR4105ZTRRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (D), Source (S), and Gate (G), with Drain electrically connected to the tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal (high-side or low-side switch node)	Electrically tied to copper tab - must be soldered to large PCB copper pour for thermal management
Source	Reference node for gate drive and current return path	Connected to power ground or low-side switch source; defines V_GS reference
Gate	Control terminal for channel modulation	High-impedance input requiring <200 nA leakage control; sensitive to ESD and ringing

Key Features

Feature	Design Value
Ultra-low R_DS(on)	24.5 mΩ max enables <1 W conduction loss at 30 A, reducing heatsink size in 48 V systems
175°C T_J(max)	Allows sustained operation at elevated ambient temperatures where standard MOSFETs derate severely
Fast switching	t_r/t_f = 40/24 ns minimizes transition losses in 100–500 kHz SMPS designs
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to E_AR = 30 mJ at 1% duty cycle
Lead-free construction	RoHS-compliant packaging with matte tin plating, compatible with Pb-free reflow profiles

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: Low-voltage BLDC motor phase leg in e-bike controller with 24–48 V battery input.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology, commutated at 10–20 kHz with PWM dead-time control.

Use Value: 24.5 mΩ R_DS(on) reduces I²R loss during high-current torque pulses; 175°C rating prevents thermal shutdown during hill-climb overload.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter.

IC Role / Device Role / Timing Role: Actively clamped rectifying switch, driven by transformer-coupled gate signal synchronized to primary switches.

Use Value: Low Q_rr (21 nC) and fast t_f (24 ns) minimize reverse recovery loss and voltage overshoot during zero-voltage switching transitions.

Industrial UPS Inverter

Hot-Swap OR-ing FET

Use Scenario: Output inverter stage in 1 kVA online UPS converting 380 V DC bus to 230 V AC.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch in full-bridge output stage operating at 4–8 kHz with sinusoidal PWM.

Use Value: Repetitive avalanche rating (E_AR = 30 mJ) absorbs energy from inductive load disconnection events without external snubbers.

Use Scenario: OR-ing FET in redundant 48 V telecom power shelf with automatic fault isolation.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing forward conduction and reverse blocking with ideal diode controller.

Use Value: Low V_SD (1.3 V) and fast trr (29 ns) of integrated body diode reduce forward drop and reverse recovery loss during switchover transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N5LF6AG	R_DS(on) = 10.5 mΩ @ 10 V, but 60 V V_DS; higher gate charge (Q_g = 45 nC)	Better conduction efficiency at lower currents; slower switching increases EMI risk in high-frequency designs	Prefer when thermal budget is tight and switching frequency ≤100 kHz
ON Semiconductor NTMFS5C673NL	R_DS(on) = 22 mΩ @ 10 V, 60 V V_DS, smaller PowerSO-8 package (lower R_θJA)	Higher power density but limited to 20 A continuous due to package thermal limits	Choose for space-constrained PCBs where peak current ≤20 A and case temperature <100°C

Compared with STL100N5LF6AG and NTMFS5C673NL, IRFR4105ZTRRPBF offers balanced trade-offs: moderate R_DS(on) and Q_g, proven avalanche ruggedness, and D-Pak manufacturability - making it optimal for cost-sensitive, medium-power industrial converters requiring reliability over raw efficiency.

Availability

IRFR4105ZTRRPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IRFR4105ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, thermally robust switching in industrial and telecom power systems - emphasizing ruggedness, repeatable avalanche performance, and manufacturable surface-mount packaging.

FAQ

What is the maximum allowable gate-source voltage for IRFR4105ZTRRPBF?

The absolute maximum V_GS is ±20 V. Operation beyond this risks irreversible gate oxide breakdown. Recommended gate drive is +10 V to fully enhance the channel while maintaining margin against transient overshoot; negative bias down to –5 V may be used for faster turn-off but must not exceed –20 V.

Does IRFR4105ZTRRPBF have a built-in body diode, and what are its key parameters?

Yes - it integrates a monolithic N-channel MOSFET body diode with V_SD = 1.3 V max at I_S = 18 A and T_J = 25°C, t_rr = 29 ns max, and Q_rr = 21 nC max. These values are measured under specified conditions (V_DD = 28 V, di/dt = 100 A/µs) and define its suitability for synchronous rectification and freewheeling.

Can IRFR4105ZTRRPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with junction temperature) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink or copper pour to ensure uniform T_J across devices.

What is the thermal resistance from junction to case (R_θJC) for IRFR4105ZTRRPBF?

R_θJC is 3.12°C/W, measured from die junction to the drain tab surface. This value assumes full-solder coverage of the exposed drain pad to a 1-in² 2-oz copper area. Actual thermal performance depends on PCB copper thickness, area, and interface material - typical R_θJA is 40°C/W for standard 1-in² mounting.

IRFR4105ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 24.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4105ZTRRPBF FAQ

1.How can I place an order for IRFR4105ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4105ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4105ZTRRPBF reliable?

The price and inventory of IRFR4105ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4105ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR4105ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4105ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4105ZTRRPBF?

IRFR4105ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4105ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4105ZTRRPBF?

For technical support, including IRFR4105ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4105ZTRRPBF requirements.

6.How does Aetrix verify that IRFR4105ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR4105ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4105ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR4105ZTRRPBF?

All IRFR4105ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4105ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4105ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR4105ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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