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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4510PBF

Name: IRFR4510PBF
Brand: Infineon Technologies
SKU: IRFR4510PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4510PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4510PBF.pdf

Description:: MOSFET N CH 100V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4510PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in DPAK (TO-252) package, rated for 100 V V_DS, 11.1 mΩ R_DS(on) at V_GS = 10 V, and 56 A continuous drain current (package-limited). It features enhanced body diode dV/dt and dI/dt capability, fully characterized avalanche SOA, and improved gate ruggedness - deployed in high-frequency hard-switched SMPS synchronous rectifiers and UPS output stages.

For engineers reviewing the IRFR4510PBF datasheet, IRFR4510PBF pinout, IRFR4510PBF application, or IRFR4510PBF equivalent, key selection criteria include its 100 V breakdown voltage, 11.1 mΩ on-resistance at 10 V gate drive, 54 nC total gate charge, 7.0 V/ns diode recovery dv/dt rating, and DPAK thermal resistance of 1.05 °C/W junction-to-case - critical for high-efficiency, high-reliability power switching designs.

Technical Context

This MOSFET employs a planar silicon process optimized for low R_DS(on) and robust unclamped inductive switching (UIS) performance, with thermally limited single-pulse avalanche energy of 143 mJ at T_J = 25°C. Its body diode exhibits 34 ns reverse recovery time (T_J = 25°C, I_F = 38 A), enabling reliable operation in synchronous rectification where fast, soft recovery reduces switching losses and EMI.

The device's dynamic parameters - including 15 nC Q_gd, 3031 pF C_iss, and 42 ns t_d(off) - are fully characterized across temperature and bias conditions, supporting accurate SPICE modeling and layout-aware gate drive design for hard-switched topologies operating up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage before avalanche; defines use in ≤100 V bus applications like 48 V telecom PSUs and 36–72 V industrial DC systems.
R_DS(on) max	13.9 mΩ at V_GS = 10 V, T_J = 125°C - sets conduction loss floor under worst-case thermal conditions; enables <1.5 W conduction loss at 56 A.
I_D (pkg)	56 A continuous @ T_C = 25°C - package-limited current; requires heatsinking to sustain full rating in real PCB layouts.
Q_g	54 nC typ. - determines gate driver current requirement; 1 A peak drive supports ~50 ns turn-on with 7.5 Ω external gate resistor.
E_AS	143 mJ single-pulse avalanche energy - quantifies ruggedness against inductive switching faults; supports reliable operation without snubbers in flyback/LLC primary switches.
dv/dt (diode)	7.0 V/ns - maximum rate of voltage rise the body diode can withstand during commutation; prevents spurious turn-on in synchronous rectifiers.
R_θJC	1.05 °C/W - junction-to-case thermal resistance; enables direct thermal interface to heatsink for high-power density designs.

Pinout & Package

IRFR4510PBF is housed in a surface-mount DPAK (TO-252) package with three terminals: Gate (G), Drain (D), and Source (S). The package features a large exposed drain pad for low thermal resistance and high-current handling.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with standard 5 V/10 V controllers.
D	Drain terminal	High-side or low-side switch node; electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to same potential.
S	Source return path	Common reference for gate drive and load current; ties to PCB ground plane or source rail; body diode anode is internally connected here.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	7.0 V/ns - suppresses false triggering during high dv/dt commutation, critical for synchronous rectifier reliability.
Fully characterized avalanche SOA	143 mJ single-pulse E_AS - enables robust unclamped inductive switching without external protection components.
Low gate charge	54 nC total Q_g - reduces gate drive power and switching losses in high-frequency (>200 kHz) converters.
Improved dynamic dV/dt ruggedness	Tested per JEDEC JESD22-A114 - withstands rapid voltage transients across drain-source without latch-up or failure.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - suitable for standard reflow assembly without special baking.

Applications

Server PSU Synchronous Rectifier

UPS Output Inverter Stage

Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V output server power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diodes; conducts during freewheeling phase with precise gate timing synchronized to primary switch.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 92% to 94.5% and lowering MOSFET junction temperature by 18°C.

Use Scenario: High-current half-bridge leg in online double-conversion UPS inverters delivering 230 V AC from 384 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched N-channel switch in low-side position; handles 50 A RMS output current with 100 V blocking margin.

Use Value: 13.9 mΩ R_DS(on) limits conduction loss to <3.5 W per device at 50 A, enabling compact heatsink design and >96% inverter efficiency at rated load.

Industrial Motor Drive Half-Bridge

DC-DC Boost Converter Switch

Use Scenario: 24–48 V DC-fed brushless motor drive half-bridge operating at 20 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: High-side or low-side switching element; body diode conducts reverse current during PWM dead-time and regeneration.

Use Value: 34 ns t_rr and 7.0 V/ns dv/dt rating prevent shoot-through and reduce diode recovery losses by 30% compared to standard MOSFETs.

Use Scenario: Main switching transistor in 24 V to 400 V boost converter for solar microinverters and battery energy storage systems.

IC Role / Device Role / Timing Role: High-voltage, high-current switch in discontinuous conduction mode (DCM) with 100 V V_DS rating providing 2× safety margin over 400 V bus.

Use Value: 100 V rating and 143 mJ E_AS ensure safe operation during transient overvoltage events and inductive kickback without clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR4510PbF	Same die, but in smaller IPAK (TO-251) package; R_θJA = 110 °C/W vs. 50 °C/W for DPAK; 45 A package-limited current.	Lower power density; unsuitable for >40 A continuous applications without aggressive cooling.	Select when board space is constrained and thermal budget allows higher junction temperature rise.
STP110N10F7	100 V, 110 A, 7.5 mΩ R_DS(on); SuperFET III technology; lower Q_g (42 nC) but higher C_oss (450 pF).	Better conduction efficiency at high current, but slower turn-off due to higher C_oss - may increase switching loss above 300 kHz.	Select for high-current, lower-frequency (<150 kHz) applications where conduction loss dominates.

Compared with IRLR4510PbF, IRFR4510PBF offers 25% higher current rating and superior thermal performance via DPAK; versus STP110N10F7, it trades lower gate charge for higher output capacitance - making it preferable in medium-frequency, thermally constrained synchronous rectifiers.

Availability

IRFR4510PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in server PSUs, uninterruptible power supply inverters, and industrial motor drives requiring stable component supply and long-term manufacturability.

Supply support for IRFR4510PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFR4510PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability, high-efficiency power conversion in hard-switched and synchronous rectifier applications up to 500 kHz.

FAQ

Is IRFR4510PBF suitable for logic-level gate drive?

No - IRFR4510PBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it requires ≥10 V V_GS to achieve specified R_DS(on) of 11.1 mΩ. Driving it with 5 V logic will result in significantly higher on-resistance (>50 mΩ) and excessive conduction loss. A dedicated 10–12 V gate driver is required.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100°C, as defined by the derating curve in Figure 9. At T_C = 100°C, the package-limited continuous drain current drops to 45 A. Operation beyond this requires verification of junction temperature using R_θJC = 1.05 °C/W and ambient thermal conditions to ensure T_J ≤ 175°C.

Does IRFR4510PBF have avalanche rating for repetitive operation?

Yes - repetitive avalanche energy (E_AR) is specified in Figure 15: 125 mJ at T_J = 25°C for 1.0% duty cycle. Repetitive avalanche is thermally limited; safe operation requires that average power dissipation (E_AR × f) stays within the device's thermal limits, verified using Z_thJC curves in Figure 13.

Can IRFR4510PBF replace IRFU4510PbF in existing designs?

Yes - IRFR4510PbF and IRFU4510PbF share identical silicon die and electrical specifications. The only difference is package: IRFR4510PbF uses DPAK (TO-252) with better thermal performance (R_θJC = 1.05 °C/W), while IRFU4510PbF uses IPAK (TO-251) with R_θJC = 1.3 °C/W. Layout and thermal design must accommodate the larger DPAK footprint and exposed drain pad.

IRFR4510PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3031 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 143W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4510PBF FAQ

1.How can I place an order for IRFR4510PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4510PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4510PBF reliable?

The price and inventory of IRFR4510PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4510PBF is usually 5 days.

3.What payment methods are accepted for IRFR4510PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4510PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4510PBF?

IRFR4510PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4510PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4510PBF?

For technical support, including IRFR4510PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4510PBF requirements.

6.How does Aetrix verify that IRFR4510PBF is sourced from the original manufacturer or authorized distributors?

All IRFR4510PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4510PBF meets industry standards.

7.What is the process for return or replacement of IRFR4510PBF?

All IRFR4510PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4510PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4510PBF part is unused and in its original packaging.

Return procedure for IRFR4510PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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