Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR48ZPBF

Name: IRFR48ZPBF
Brand: Infineon Technologies
SKU: IRFR48ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR48ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR48ZPBF.pdf

Description:: MOSFET N-CH 55V 42A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,983

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR48ZPBF from Infineon Technologies is a 55V, 42A N-channel DPAK-packaged Power MOSFET with 11 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 250 mJ - designed for high-efficiency DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR48ZPBF datasheet, IRFR48ZPBF pinout, IRFR48ZPBF application, or IRFR48ZPBF equivalent, key selection criteria include its low conduction loss (8.86–11 mΩ), fast switching (t_d(on) = 15 ns, t_f = 35 ns), body diode recovery (t_rr = 20–40 ns), and thermal robustness (R_θJC = 1.64°C/W) in high-current industrial power stages.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per unit area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 40–60 nC, Q_gd = 15 nC) supports efficient high-frequency operation above 100 kHz in hard-switched topologies.

The integrated body diode exhibits V_SD = 1.3 V at 37 A and reverse recovery charge Q_rr = 14–28 nC, enabling reliable freewheeling in buck and half-bridge configurations without external Schottky supplementation under moderate di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Withstands up to 55 V drain-source voltage before breakdown; suitable for 48 V nominal bus systems with transient margin.
R_DS(on)	8.86–11 mΩ @ V_GS = 10 V - Enables ≤0.5 W conduction loss at 37 A continuous current, reducing heatsink requirements.
I_D (T_C = 25°C)	42 A - Continuous drain current rating at case temperature 25°C; limited by silicon, not package.
T_J(max)	175°C - Maximum junction temperature allows sustained operation in thermally constrained enclosures or high ambient environments.
E_AS	250 mJ - Single-pulse avalanche energy rating confirms robustness against inductive switching transients without snubbers.
Q_g	40–60 nC - Total gate charge determines driver strength requirement; compatible with standard 1-A peak gate drivers at ≤500 kHz.
t_r/t_f	61 ns / 35 ns - Fast rise/fall times reduce switching losses and EMI generation in high-frequency SMPS designs.

Pinout & Package

IRFR48ZPBF is housed in a surface-mount DPAK (TO-252AA) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low thermal resistance (R_θJC = 1.64°C/W) and must be soldered to a PCB copper pour for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal connected to internal die substrate	Electrically and thermally coupled to PCB copper; requires full-surface solder mask opening and thermal via array.
Source (Pin 1)	Reference node for gate drive and current return path	Low-inductance connection critical for stable gate control; LS = 7.5 nH limits high-di/dt noise coupling.
Gate (Pin 2)	Control electrode modulating channel conductivity	High-impedance input requiring <200 nA leakage handling; Q_gs = 11 nC defines Miller plateau duration.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.86 mΩ typical enables >96% efficiency in 48 V/30 A DC-DC stages at 100 kHz.
Repetitive avalanche rated	Rated for unlimited repetitive avalanche events as long as T_J ≤ 175°C - eliminates need for overvoltage clamping in inductive loads.
Fast body diode recovery	t_rr = 20–40 ns and Q_rr = 14–28 nC reduce cross-conduction loss and EMI in synchronous rectifiers.
High-temperature operation	Guaranteed R_DS(on) stability up to 175°C junction temperature - supports compact thermal design in sealed enclosures.
Lead-free and RoHS compliant	Meets IPC/JEDEC J-STD-020D reflow profile; qualified for 260°C peak temperature, 10-second soldering.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 37 A continuous phase current with 100 kHz PWM.

Use Value: Low R_DS(on) minimizes I²R losses during conduction; fast t_f reduces shoot-through risk during dead-time transitions.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V telecom or server PSU with >94% efficiency target.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes; driven by transformer-coupled gate signal.

Use Value: Body diode V_SD = 1.3 V and Q_rr = 28 nC enable clean commutation without voltage spikes or ringing.

Uninterruptible Power Supply (UPS)

Automotive DC Power Distribution

Use Scenario: Bidirectional battery interface in line-interactive UPS supporting 3 kVA output.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair for AC/DC and DC/AC inversion with reverse polarity protection.

Use Value: Repetitive avalanche rating (250 mJ) absorbs inductive kickback from transformer leakage during transfer switching.

Use Scenario: Load switch in 24 V commercial vehicle power distribution module controlling HVAC or lighting subsystems.

IC Role / Device Role / Timing Role: High-side power switch with integrated current sensing and fault reporting via source degeneration.

Use Value: 175°C T_J(max) ensures reliability in engine bay environments where ambient exceeds 105°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10L	R_DS(on) = 22 mΩ @ 10 V; V_DSS = 100 V; TO-220 package	Higher voltage rating but double R_DS(on); unsuitable for high-current 48 V systems due to higher conduction loss	Select only if 100 V blocking is required and thermal budget allows 2× conduction loss.
IXTP44N10P	R_DS(on) = 18 mΩ @ 10 V; V_DSS = 100 V; TO-220FP package	Higher R_DS(on) and lower I_D (44 A vs. 42 A); no avalanche rating specified	Use only in non-inductive, low-di/dt applications where avalanche stress is absent.

Compared with STP40NF10L and IXTP44N10P, IRFR48ZPBF delivers superior conduction efficiency at 48 V, verified avalanche robustness for motor and transformer loads, and DPAK thermal performance - making it optimal for space-constrained, high-reliability industrial power stages.

Availability

IRFR48ZPBF is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, uninterruptible power supplies, and automotive power distribution modules requiring stable component supply across multi-year production cycles.

Supply support for IRFR48ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and industrial reliability requirements.

IRFR48ZPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in industrial motor control, renewable energy inverters, and server power supplies where thermal resilience and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRFR48ZPBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 25 A (derated from 42 A at 25°C), as specified in the Absolute Maximum Ratings table. This derating follows the linear thermal limit defined by R_θJC = 1.64°C/W and P_D = 91 W at T_C = 25°C.

Does IRFR48ZPBF have a specified gate threshold voltage range?

Yes - V_GS(th) is specified from 2.0 V to 4.0 V at T_J = 25°C and I_D = 1 mA. The threshold decreases with rising temperature, ranging from ~3.5 V at 25°C to ~2.2 V at 175°C, as shown in Figure 14 of the datasheet.

Can IRFR48ZPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized to 2.5× at 175°C) enables inherent current sharing when paralleled. Layout symmetry, matched gate drive impedance, and shared source inductance (LS = 7.5 nH) are essential to avoid dynamic imbalance.

Is the body diode in IRFR48ZPBF optimized for high-frequency recovery?

Yes - the body diode has t_rr = 20–40 ns and Q_rr = 14–28 nC at T_J = 25°C, ID = 37 A, and di/dt = 100 A/µs. These values are measured under standardized unclamped inductive test conditions and support operation up to 300 kHz in synchronous rectification.

IRFR48ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1720 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR48ZPBF FAQ

1.How can I place an order for IRFR48ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR48ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR48ZPBF reliable?

The price and inventory of IRFR48ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR48ZPBF is usually 5 days.

3.What payment methods are accepted for IRFR48ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR48ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR48ZPBF?

IRFR48ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR48ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR48ZPBF?

For technical support, including IRFR48ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR48ZPBF requirements.

6.How does Aetrix verify that IRFR48ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFR48ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR48ZPBF meets industry standards.

7.What is the process for return or replacement of IRFR48ZPBF?

All IRFR48ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR48ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR48ZPBF part is unused and in its original packaging.

Return procedure for IRFR48ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…