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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5305PBF

Name: IRFR5305PBF
Brand: Infineon Technologies
SKU: IRFR5305PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR5305PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5305PBF.pdf

Description:: MOSFET P-CH 55V 31A DPAK

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Product details

Overview

IRFR5305PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in D-Pak surface-mount package, rated for -55 V V_DS, 0.065 Ω R_DS(on) at V_GS = -10 V, and -31 A continuous drain current at T_C = 25 °C. It features fully avalanche-rated ruggedness, fast switching (t_r = 66 ns, t_f = 63 ns), and integrated body diode with 71–110 ns reverse recovery time - used in DC-DC synchronous rectification, high-side load switching, and motor control H-bridge legs.

For engineers reviewing the IRFR5305PBF datasheet, IRFR5305PBF pinout, IRFR5305PBF application, or IRFR5305PBF equivalent, key selection criteria include verified -55 V breakdown voltage, gate threshold range (-2.0 to -4.0 V), total gate charge (63 nC), junction-to-case thermal resistance (1.4 °C/W), and D-Pak leadframe compatibility with vapor-phase reflow.

Technical Context

This P-channel MOSFET operates as a high-side switch or synchronous rectifier where gate drive is referenced to the source. Its negative V_GS(th) enables direct logic-level compatibility with microcontroller GPIOs when driven via level-shifting or complementary driver stages.

The device integrates a robust body diode with -1.3 V forward voltage at -16 A and supports unclamped inductive switching up to 280 mJ single-pulse avalanche energy. Thermal design relies on low R_θJC (1.4 °C/W) and PCB-mounted R_θJA of 50 °C/W on 1" FR-4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-55 V - Maximum blocking voltage in high-side configuration before avalanche onset
R_DS(on)	0.065 Ω @ V_GS = -10 V - Enables <1 W conduction loss at -16 A, critical for thermal management in compact layouts
I_D (continuous)	-31 A @ T_C = 25 °C - Supports high-current loads such as solenoid drivers and battery disconnect circuits
Q_g	63 nC - Determines gate drive power requirement; impacts switching loss in PWM applications above 50 kHz
E_AS	280 mJ - Confirmed single-pulse avalanche capability allows safe operation under inductive turn-off stress without snubbers
t_r/t_f	66 ns / 63 ns - Fast edge rates reduce transition losses but require careful PCB layout to suppress ringing
R_θJC	1.4 °C/W - Enables direct heatsinking to copper pour or metal-core PCB for >10 W dissipation without external heatsink

Pinout & Package

D-Pak (TO-252AA) surface-mount package with gull-wing leads; designed for vapor-phase, infrared, or wave soldering. Thermal pad on underside provides primary heat path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Reference node for gate drive and current return path	Connected to high-side rail or load common; determines V_GS bias point and must be low-inductance
Drain (D)	Main current output terminal	Connected to load or ground; carries full switched current and requires wide copper trace for thermal and EMI control
Gate (G)	Control input for channel conduction	High-impedance node sensitive to noise; requires local 100 nF decoupling and series resistor (≤10 Ω) to damp oscillation

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.065 Ω reduces I²R losses by >40% vs. legacy P-channel MOSFETs at same current, enabling smaller thermal pads
Fully avalanche rated	280 mJ single-pulse energy rating eliminates need for external clamping in relay/solenoid driving applications
Fast switching	66 ns rise + 63 ns fall time supports >100 kHz PWM in DC-DC converters without excessive gate drive power
Lead-free (PbF)	RoHS-compliant termination meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard SMT assembly

Applications

DC-DC Synchronous Rectifier

High-Side Load Switch

Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V flyback converter for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: P-channel MOSFET replaces Schottky diode to reduce conduction loss and improve efficiency at light-to-moderate loads.

Use Value: Achieves >92% efficiency at 2 A output due to 0.065 Ω R_DS(on), cutting diode forward drop loss by 0.45 W vs. 40 V/3 A Schottky.

Use Scenario: Controlled power-up sequencing for FPGA core voltage rail in telecom baseband board.

IC Role / Device Role / Timing Role: High-side switch enabling soft-start via gate ramp and fault isolation via current sensing at source.

Use Value: -31 A rating and -55 V V_DS support 12 V/5 A rail with margin; body diode blocks backfeed during hot-swap events.

H-Bridge Motor Driver (High-Side)

Reverse Polarity Protection

Use Scenario: Bidirectional 24 V brushed DC motor control in automated valve actuator with stall detection.

IC Role / Device Role / Timing Role: Upper-leg P-channel switch in half-bridge topology; synchronized with N-channel low-side using dead-time controlled gate drivers.

Use Value: 63 nC Q_g allows clean 20 kHz PWM switching; avalanche rating handles inductive kickback during direction reversal.

Use Scenario: Input protection for 48 V PoE-powered surveillance camera module exposed to field wiring errors.

IC Role / Device Role / Timing Role: Source-connected P-MOSFET placed between input connector and DC-DC input, conducting only during correct polarity.

Use Value: -55 V V_DS withstands 60 V transients; 0.065 Ω R_DS(on) adds <30 mV dropout at 2 A, minimizing power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7843PbF	-40 V V_DS, 0.0058 Ω R_DS(on), TO-252 package	Lower voltage rating limits use to ≤36 V systems; lower R_DS(on) suits high-efficiency 12 V applications	Select when operating voltage ≤36 V and <10 mΩ on-resistance is required for <1 W loss at 10 A
STP12PF06	-60 V V_DS, 0.12 Ω R_DS(on), TO-220 package	Through-hole mounting; higher R_DS(on) increases conduction loss but offers easier heatsinking	Choose for prototyping or low-volume production where manual assembly and bolt-on heatsinks are preferred

Compared with IRFR5305PBF, IRLL7843PbF trades voltage headroom for ultra-low on-resistance in 12 V systems, while STP12PF06 sacrifices surface-mount compatibility and efficiency for mechanical robustness and thermal serviceability in legacy designs.

Availability

IRFR5305PBF is available at Aetrix Electronics and suitable for DC-DC synchronous rectification, high-side load switching, and H-bridge motor control requiring stable component supply across automotive aftermarket, industrial automation, and telecom infrastructure programs.

Supply support for IRFR5305PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous AEC-Q101 qualification and industrial-grade reliability testing.

The HEXFET® Power MOSFET product line targets high-efficiency switching applications including motor drives, power supplies, and load management - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum allowable gate-to-source voltage for IRFR5305PBF?

The absolute maximum V_GS is ±20 V. Operation beyond ±15 V risks irreversible gate oxide damage. For reliable long-term use, gate drive should be limited to -10 V to -12 V for full enhancement, with transient spikes clamped using Zener diodes or gate driver ICs with built-in overvoltage protection.

Can IRFR5305PBF be used in linear (analog) mode for current regulation?

Yes, but with strict thermal derating: R_DS(on) increases with temperature, and safe operating area (SOA) limits continuous linear operation to ≤1.5 W at T_C = 25 °C. For precision analog use, SOA curves in Figure 8 must be consulted to avoid secondary breakdown at V_DS >15 V and I_D >5 A.

Does IRFR5305PBF require a gate resistor, and what value is recommended?

A series gate resistor is mandatory to damp parasitic oscillation and limit peak gate current. A value of 4.7–10 Ω is recommended for most 20–100 kHz switching applications. Lower values increase switching speed but risk ringing; higher values slow turn-on/turn-off and raise switching losses.

How does the body diode performance impact reverse recovery in synchronous rectification?

The body diode exhibits 71–110 ns reverse recovery time (t_rr) and 170–250 nC reverse recovery charge (Q_rr). In synchronous rectification, this causes brief shoot-through if gate timing isn't precisely controlled. Use gate drivers with programmable dead time ≥150 ns to prevent cross-conduction during diode commutation.

IRFR5305PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5305PBF FAQ

1.How can I place an order for IRFR5305PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5305PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5305PBF reliable?

The price and inventory of IRFR5305PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5305PBF is usually 5 days.

3.What payment methods are accepted for IRFR5305PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5305PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5305PBF?

IRFR5305PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5305PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5305PBF?

For technical support, including IRFR5305PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5305PBF requirements.

6.How does Aetrix verify that IRFR5305PBF is sourced from the original manufacturer or authorized distributors?

All IRFR5305PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5305PBF meets industry standards.

7.What is the process for return or replacement of IRFR5305PBF?

All IRFR5305PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5305PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5305PBF part is unused and in its original packaging.

Return procedure for IRFR5305PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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