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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5305TRL

Name: IRFR5305TRL
Brand: Infineon Technologies
SKU: IRFR5305TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR5305TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5305TRL.pdf

Description:: MOSFET P-CH 55V 31A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR5305TRL from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for -55 V V_DS, 0.065 Ω R_DS(on) at -10 V V_GS, and -31 A continuous drain current at T_C = 25°C. It serves as a high-efficiency, surface-mount power switch in DC-DC converters, motor drivers, and load management circuits.

For engineers reviewing the IRFR5305TRL datasheet, IRFR5305TRL pinout, IRFR5305TRL application, or IRFR5305TRL equivalent, key selection criteria include its fully avalanche-rated capability (280 mJ E_AS), fast switching (t_r = 66 ns, t_f = 63 ns), low gate charge (Q_g = 63 nC), and rugged thermal performance (R_θJC = 1.4 °C/W).

Technical Context

This P-channel MOSFET operates with negative gate drive relative to source, enabling high-side switching without level-shifting circuitry in buck regulators and OR-ing applications. Its body diode exhibits V_SD = -1.3 V at -16 A and t_rr = 71–110 ns, supporting synchronous rectification where reverse recovery behavior is critical.

The device features a fully rated unclamped inductive switching capability (IAS = -16 A, E_AS = 280 mJ), validated under standardized test conditions (V_DD = -25 V, L = 2.1 mH, R_G = 25 Ω). Thermal design is supported by low junction-to-case resistance (1.4 °C/W) and linear derating (0.71 W/°C above 25°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-55 V - Maximum blocking voltage for high-side switch in ≤48 V systems
R_DS(on)	0.065 Ω @ V_GS = -10 V - Enables <1 W conduction loss at -16 A
I_D (continuous)	-31 A @ T_C = 25°C - Supports high-current load switching on thermally optimized PCBs
Q_g	63 nC - Determines gate driver strength requirement for 100 kHz+ switching
E_AS	280 mJ - Confirmed single-pulse avalanche energy tolerance for inductive load transients
t_r/t_f	66 ns / 63 ns - Enables efficient hard-switching in SMPS up to ~500 kHz
R_θJC	1.4 °C/W - Allows direct heatsinking via exposed drain pad for >100 W dissipation

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives negative V_GS to turn on; requires stable -10 V drive for full R_DS(on) specification
2 (Drain)	Main power output	Connected to exposed metal tab; electrically and thermally coupled to PCB copper pour
3 (Source)	Reference node	Serves as return path for load current and gate drive reference in high-side configuration
4 (Drain)	Secondary drain connection	Redundant drain terminal for enhanced current handling and lower parasitic inductance

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.065 Ω enables <1 W conduction loss at -16 A, reducing thermal footprint in compact designs
Fully avalanche rated	280 mJ single-pulse energy rating eliminates need for external snubbers in inductive switching
Fast switching speed	66 ns rise / 63 ns fall time supports high-frequency operation with minimal switching loss
Surface-mount D-Pak	TO-252AA outline allows automated assembly and direct PCB thermal coupling via drain pad

Applications

DC-DC Buck Converter

High-Side Load Switch

Use Scenario: Synchronous rectification in 12 V–48 V input buck converters delivering up to 20 A.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling main power path; body diode conducts during low-side FET off-time.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and reverse recovery losses, improving efficiency by ≥1.2% at 10 A load.

Use Scenario: Hot-swap and inrush control for industrial 24 V PLC I/O modules.

IC Role / Device Role / Timing Role: High-side power switch enabling controlled turn-on via gate ramp; body diode blocks reverse current.

Use Value: Fully rated avalanche capability absorbs inductive kickback from solenoid loads without clamping components.

Motor Drive H-Bridge

OR-ing Diode Replacement

Use Scenario: Upper-leg switch in 24 V brushed DC motor half-bridge drivers.

IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side; driven by isolated gate driver.

Use Value: 0.71 W/°C derating and 1.4 °C/W R_θJC support sustained 15 A motor stall current with passive heatsinking.

Use Scenario: Redundant 12 V power supply OR-ing in telecom shelf management.

IC Role / Device Role / Timing Role: Active replacement for Schottky diode; gate driven by ideal diode controller.

Use Value: -1.3 V V_SD and 71 ns t_rr cut forward drop by 65% vs. 40 V Schottky, reducing heat generation by >2.5 W per rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9024NTRL	V_DS = -60 V, R_DS(on) = 0.23 Ω @ -10 V - higher on-resistance, same D-Pak	Lower current density; suitable for ≤10 A applications with tighter voltage margin	Select when higher breakdown voltage is required and conduction loss budget allows +175% R_DS(on)
STP12PF06	V_DS = -60 V, R_DS(on) = 0.12 Ω @ -10 V, TO-220 package - no surface-mount option	Requires through-hole assembly and external heatsink; not PCB thermal-integrated	Choose only if legacy TO-220 footprint must be retained and thermal interface permits discrete heatsink mounting

Compared with IRFR9024NTRL and STP12PF06, the IRFR5305TRL delivers the lowest R_DS(on) in D-Pak form factor, enabling higher current density and superior thermal integration on FR-4 PCBs-critical for space-constrained industrial and automotive power stages.

Availability

IRFR5305TRL is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap controllers, and redundant power OR-ing circuits requiring stable component supply and long-term industrial availability.

Supply support for IRFR5305TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing applications.

The HEXFET® Fifth Generation product line targets high-reliability power switching in thermally constrained environments, emphasizing low R_DS(on), robust avalanche performance, and surface-mount thermal scalability.

FAQ

What is the maximum safe operating area (SOA) limit for IRFR5305TRL at 100°C case temperature?

At T_C = 100°C, the SOA curve limits continuous operation to approximately -12 A at -20 V V_DS, governed by R_DS(on) thermal runaway. Pulse operation up to -110 A is permitted for ≤100 µs with duty cycle ≤2%, provided peak junction temperature remains below 175°C per Fig. 8.

Can IRFR5305TRL be used with logic-level gate drive (e.g., 3.3 V or 5 V microcontroller outputs)?

No-its V_GS(th) range is -2.0 V to -4.0 V, and R_DS(on) is only guaranteed at -10 V V_GS. At 5 V drive, R_DS(on) exceeds 0.25 Ω, causing excessive conduction loss. A dedicated gate driver (e.g., TC4427) generating -10 V is required for full performance.

How does the body diode's reverse recovery performance affect synchronous rectification efficiency?

With t_rr = 71–110 ns and Q_rr = 170–250 nC, the body diode introduces measurable switching loss during dead-time transitions. In 100 kHz buck converters, this contributes ~0.4 W loss at 16 A-reduced by using complementary N-channel FETs with faster diodes or active gate control.

Is the exposed drain pad electrically isolated from the PCB ground plane in standard D-Pak layout?

No-the drain pad (pins 2 and 4) is internally connected to the MOSFET's drain terminal and must be soldered directly to a PCB copper pour serving as both thermal sink and high-current return path. Electrical isolation requires dielectric thermal interface material and careful layout to avoid shorting to adjacent ground planes.

IRFR5305TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5305TRL FAQ

1.How can I place an order for IRFR5305TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5305TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5305TRL reliable?

The price and inventory of IRFR5305TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5305TRL is usually 5 days.

3.What payment methods are accepted for IRFR5305TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5305TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5305TRL?

IRFR5305TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5305TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5305TRL?

For technical support, including IRFR5305TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5305TRL requirements.

6.How does Aetrix verify that IRFR5305TRL is sourced from the original manufacturer or authorized distributors?

All IRFR5305TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5305TRL meets industry standards.

7.What is the process for return or replacement of IRFR5305TRL?

All IRFR5305TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5305TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5305TRL part is unused and in its original packaging.

Return procedure for IRFR5305TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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