Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFR5305TRR

Part No.:
IRFR5305TRR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR5305TRR.pdf
Description:
MOSFET P-CH 55V 31A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,428

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR5305TRR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for -55 V VDS, 0.065 Ω RDS(on) at -10 V VGS, and -31 A continuous drain current at TC = 25°C. It serves as a high-efficiency, surface-mount power switch in DC-DC converters, motor drivers, and load management circuits.

For engineers reviewing the IRFR5305TRR datasheet, IRFR5305TRR pinout, IRFR5305TRR application, or IRFR5305TRR equivalent, key selection criteria include its fully avalanche-rated capability (280 mJ EAS), fast switching (tr = 66 ns, tf = 63 ns), low gate charge (Qg = 63 nC), and rugged thermal performance (RθJC = 1.4 °C/W).

Technical Context

This P-channel MOSFET operates with negative gate drive relative to source, enabling high-side switching without level-shifting circuitry in buck regulators and OR-ing applications. Its body diode features low forward voltage (-1.3 V at -16 A) and controlled reverse recovery (trr = 71–110 ns, Qrr = 170–250 nC), supporting synchronous rectification in non-isolated topologies.

The device employs fifth-generation HEXFET processing for ultra-low on-resistance per die area and integrates a fully rated unclamped inductive switching (UIS) capability. Thermal design is supported by a low junction-to-case resistance (1.4 °C/W) and validated operation across -55°C to +175°C junction temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-55 V - Maximum blocking voltage in high-side switch configurations
RDS(on)0.065 Ω @ VGS = -10 V - Enables <1 W conduction loss at -16 A DC load
ID (continuous)-31 A @ TC = 25°C - Supports high-current load switching on thermally optimized PCBs
EAS280 mJ - Fully rated single-pulse avalanche energy for inductive load turn-off safety
Qg63 nC - Determines gate driver power requirement and switching speed trade-off
tr/tf66 ns / 63 ns - Enables >100 kHz switching in hard-switched SMPS designs
RθJC1.4 °C/W - Allows direct heatsinking via exposed drain pad for thermal management

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor-phase, infrared, and wave soldering. Leads are gull-wing, coplanar, and RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives negative gate drive signal; requires -10 V for full enhancement and low RDS(on)
2 (Drain)Power output nodeConnected to exposed copper pad; carries main load current and dissipates heat directly to PCB
3 (Source)Reference nodeServes as return path for load current and reference for gate drive; tied to system ground in high-side switch
4 (Drain)Power output nodeSecond drain connection-electrically identical to Pin 2; enhances current handling and thermal spreading

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.065 Ω enables <1 W conduction loss at -16 A, reducing thermal footprint in space-constrained layouts
Fully avalanche rated280 mJ single-pulse energy rating eliminates need for external snubbers in inductive switching
Fast body diode71–110 ns reverse recovery time supports efficient synchronous rectification in buck converters
Thermally enhanced D-PakExposed drain pad and 1.4 °C/W RθJC allow direct PCB heatsinking without mechanical clips or thermal interface material

Applications

DC-DC Buck ConverterHigh-Side Load Switch

Use Scenario: Step-down voltage regulation in industrial PLC I/O modules with 12 V input and 5 V/3.3 V outputs.

IC Role / Device Role: High-side P-channel MOSFET used as synchronous rectifier and main power switch.

Use Value: Low RDS(on) and fast switching minimize conduction and switching losses, achieving >92% efficiency at 5 A load.

Use Scenario: Controlled power-up sequencing for FPGA core rails in telecom baseband cards.

IC Role / Device Role: High-side load switch enabling soft-start and overcurrent protection via gate control.

Use Value: Avalanche rating ensures robustness against inrush current transients; exposed drain pad simplifies thermal layout.

Motor Driver H-BridgeOR-ing Circuit

Use Scenario: 24 V brushed DC motor control in automated warehouse conveyors.

IC Role / Device Role: Upper-leg switch in half-bridge configuration driving motor phase voltage.

Use Value: -55 V VDS withstands back-EMF spikes; fast body diode reduces shoot-through risk during PWM dead-time.

Use Scenario: Redundant 48 V power supply selection in network routers with dual PSUs.

IC Role / Device Role: P-channel MOSFET acting as ideal diode in active OR-ing configuration.

Use Value: Low VSD (-1.3 V at -16 A) cuts forward drop by >60% vs. Schottky diodes, reducing heat generation and improving system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9530NPBFTO-220 package, higher RDS(on) (0.3 Ω), lower ID (-12 A), no avalanche ratingRequires heatsink; unsuitable for surface-mount or high-reliability inductive switchingSelect only when through-hole mounting and lower cost outweigh thermal and ruggedness requirements
DMG2305UVT-7Small SOT-23 package, lower voltage (-20 V), higher RDS(on) (0.045 Ω @ -4.5 V), Qg = 10 nCLimited to low-power logic-level loads; not rated for UIS or high-current DC operationPrefer for compact, low-voltage, low-current bias or signal switching-not for power conversion

Compared with IRF9530NPBF and DMG2305UVT-7, IRFR5305TRR uniquely combines surface-mount D-Pak packaging, -55 V rating, full avalanche capability, and 0.065 Ω on-resistance-making it the only option suitable for rugged, medium-power, high-side switching in industrial power supplies and motor controls.

Availability

IRFR5305TRR is available at Aetrix Electronics and suitable for DC-DC converters, high-side load switches, motor drivers, and OR-ing circuits requiring stable component supply and long-term industrial availability.

Supply support for IRFR5305TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in industrial, computing, and automotive systems-emphasizing low conduction loss, fast switching, and rugged transient handling.

FAQ

What is the maximum safe operating voltage for IRFR5305TRR in continuous DC blocking?

The absolute maximum drain-to-source voltage (VDS) is -55 V under all operating conditions. This rating applies to steady-state DC blocking and must not be exceeded-even momentarily-during switching transients or inductive kickback events. Derating is required above TJ = 25°C per the breakdown voltage temperature coefficient (-0.034 V/°C).

Can IRFR5305TRR be used without a gate driver in microcontroller-based applications?

Yes, but only with logic-level gate drive capable of delivering -10 V at sufficient current (≥100 mA peak). Standard 3.3 V or 5 V GPIO cannot fully enhance this device; its VGS(th) range (-2.0 V to -4.0 V) means partial turn-on occurs at -5 V, resulting in elevated RDS(on) (>0.15 Ω) and thermal risk. A dedicated P-channel gate driver or level shifter is strongly recommended.

How is thermal performance affected when the drain pad is not soldered to a copper plane?

Without PCB copper thermal relief, RθJA degrades from 50 °C/W (1"² FR-4 board) to ~110 °C/W (socket mount), limiting continuous power dissipation to ~1.5 W at ambient. Full thermal benefit requires minimum 1 in² (6.5 cm²) 2-oz copper pour connected to the exposed drain pad via ≥4 thermal vias-enabling up to 110 W at TC = 25°C.

Does IRFR5305TRR support paralleling for higher current capacity?

Yes-its positive RDS(on) temperature coefficient (-0.034 Ω/°C) enables inherent current sharing when multiple units are paralleled with matched gate drive and symmetric PCB layout. However, gate loop inductance must be minimized (<5 nH per device) to prevent oscillation, and individual gate resistors (6.8 Ω typical) are required to dampen ringing during switching transitions.

IRFR5305TRR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR5305TRR FAQ

1.How can I place an order for IRFR5305TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5305TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5305TRR reliable?

The price and inventory of IRFR5305TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5305TRR is usually 5 days.

3.What payment methods are accepted for IRFR5305TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5305TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5305TRR?

IRFR5305TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5305TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5305TRR?

For technical support, including IRFR5305TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5305TRR requirements.

6.How does Aetrix verify that IRFR5305TRR is sourced from the original manufacturer or authorized distributors?

All IRFR5305TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5305TRR meets industry standards.

7.What is the process for return or replacement of IRFR5305TRR?

All IRFR5305TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5305TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5305TRR part is unused and in its original packaging.

Return procedure for IRFR5305TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR5305TRR Tags

  • IRFR5305TRR
  • IRFR5305TRR PDF
  • IRFR5305TRR Datasheet
  • IRFR5305TRR Specifications
  • IRFR5305TRR Images
  • Infineon Technologies
  • Infineon Technologies IRFR5305TRR
  • Buy IRFR5305TRR
  • IRFR5305TRR Price
  • IRFR5305TRR Distributor
  • IRFR5305TRR Supplier
  • IRFR5305TRR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER