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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5305TRRPBF

Name: IRFR5305TRRPBF
Brand: Infineon Technologies
SKU: IRFR5305TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR5305TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5305TRRPBF.pdf

Description:: MOSFET P-CH 55V 31A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR5305TRRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in D-Pak surface-mount package, rated for -55 V V_BR(DSS), 0.065 Ω R_DS(on) at V_GS = -10 V, and -31 A continuous drain current at T_C = 25 °C. It is fully avalanche-rated, features fast switching (t_r = 66 ns, t_f = 63 ns), and is used in DC-DC synchronous rectification, high-side load switching, and reverse polarity protection circuits.

For engineers reviewing the IRFR5305TRRPBF datasheet, IRFR5305TRRPBF pinout, IRFR5305TRRPBF application, or IRFR5305TRRPBF equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0 V), low gate charge (Q_g = 63 nC), rugged unclamped inductive switching capability (E_AS = 280 mJ), and thermal resistance (R_θJC = 1.4 °C/W) critical for high-reliability power stage design.

Technical Context

This P-channel MOSFET operates with negative gate drive relative to source, enabling high-side switching without level-shifting circuitry. Its low R_DS(on) and optimized gate charge support efficient operation in 12 V and 24 V automotive and industrial power rails.

The device integrates a robust body diode with V_SD = -1.3 V at -16 A and t_rr = 71–110 ns, making it suitable for synchronous buck topologies where reverse recovery performance impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	-55 V - Withstands up to -55 V drain-to-source voltage before breakdown; defines maximum blocking capability in high-side switch applications.
R_DS(on)	0.065 Ω @ V_GS = -10 V - Enables <1 W conduction loss at -16 A, critical for thermally constrained PCB-mounted designs.
I_D (continuous)	-31 A @ T_C = 25 °C - Supports high-current loads when heatsinked; derates to -22 A at 100 °C case temperature.
Q_g	63 nC - Determines gate driver power requirement and switching transition time; enables ~100 kHz operation with standard drivers.
E_AS	280 mJ - Specifies single-pulse avalanche energy handling; allows safe operation under inductive turn-off stress without external snubbers.
t_r/t_f	66 ns / 63 ns - Fast edge rates reduce switching losses but require careful layout to suppress ringing in high-di/dt applications.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables direct thermal pad mounting to heatsinks or copper planes for high-power dissipation.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Standard footprint per IR application note AN-994.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires negative V_GS (≤ -2 V) to turn on; high-impedance input with ±20 V absolute max rating.
D	Drain	Main current-carrying terminal connected to exposed metal tab; electrically and thermally tied to PCB copper pour for heat dissipation.
S	Source	Reference node for gate drive and load return path; connects to positive rail in high-side switch configuration.

Key Features

Feature	Design Value
Fully avalanche-rated	Withstands 280 mJ single-pulse avalanche energy without failure-eliminates need for external clamping in inductive load switching.
Ultra-low R_DS(on)	0.065 Ω at -10 V gate drive reduces conduction loss by >30% vs. prior-generation P-channel MOSFETs at same current density.
Optimized gate charge	63 nC total gate charge balances switching speed and driver complexity-enables use with low-power microcontroller GPIOs via simple buffer stages.
Robust body diode	170–250 nC Q_rr and 71 ns t_rr support synchronous rectification in buck converters without significant reverse recovery loss penalty.
Lead-free & RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; qualified for vapor phase, infrared, and wave soldering-ensures manufacturability in modern SMT lines.

Applications

Automotive Reverse Polarity Protection

Industrial High-Side Load Switch

Use Scenario: Prevents damage from battery misconnection in 12 V/24 V vehicle ECUs and infotainment systems.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with battery input; conducts only when V_IN polarity is correct.

Use Value: Eliminates 0.7 V diode drop, reducing power loss and heat generation while supporting >30 A peak load currents.

Use Scenario: Controlled power-up of motor drivers, solenoids, or sensors in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side switch isolating downstream circuitry from main supply; driven directly by microcontroller with pull-up gate control.

Use Value: Enables precise sequencing, fault isolation, and inrush current limiting without external level shifters or PMICs.

DC-DC Synchronous Rectification

Telecom Hot-Swap Circuit

Use Scenario: Secondary-side rectification in isolated 48 V to 12 V telecom buck converters.

IC Role / Device Role / Timing Role: Synchronously replaces Schottky diode in buck output stage; body diode conducts during dead-time, channel conducts during active period.

Use Value: Reduces conduction loss by 40% over 40 V Schottky, improving full-load efficiency from 92% to 94.5% at 20 A.

Use Scenario: Inrush-limited board insertion into live backplane in enterprise servers and network switches.

IC Role / Device Role / Timing Role: High-side MOSFET controlled by hot-swap controller (e.g., LTC4215) to ramp V_OUT linearly during insertion.

Use Value: Limits peak inrush to <5 A using R_DS(on) and gate slew rate control-prevents backplane voltage droop and contact arcing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR6215PBF	V_BR(DSS) = -150 V, R_DS(on) = 0.15 Ω @ -10 V, I_D = -15 A - higher voltage rating but higher on-resistance.	Better suited for 48 V industrial bus protection where higher blocking is required; less efficient at 12 V due to 2.3× higher R_DS(on).	Select when V_IN exceeds 60 V or transient immunity >100 V is mandatory; avoid for 12 V/24 V high-current apps.
STP16PF55	V_BR(DSS) = -55 V, R_DS(on) = 0.075 Ω @ -10 V, I_D = -16 A - same voltage rating but lower current and slightly higher R_DS(on).	Smaller die size limits thermal handling; not rated for >100 W pulsed avalanche; suitable for space-constrained consumer-grade designs.	Choose for cost-sensitive, lower-power applications (<15 A continuous); verify SOA compliance for repetitive inductive switching.

Compared with IRFR6215PBF and STP16PF55, IRFR5305TRRPBF delivers the best balance of low R_DS(on), high continuous current, and proven avalanche ruggedness in the -55 V class-making it optimal for automotive and industrial high-side switching where reliability and efficiency are co-prioritized.

Availability

IRFR5305TRRPBF is available at Aetrix Electronics and suitable for automotive reverse polarity protection, industrial high-side load switching, and DC-DC synchronous rectification requiring stable component supply across production lifecycles.

Supply support for IRFR5305TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion and control-targeting automotive, industrial, and telecom applications demanding rugged switching, low conduction loss, and robust thermal performance.

FAQ

What is the maximum allowable gate-to-source voltage for IRFR5305TRRPBF?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to -12 V to -15 V for full enhancement, with transient spikes clamped below ±18 V using Zener diodes or integrated gate drivers with built-in protection.

Can IRFR5305TRRPBF be used in parallel configurations?

Yes, but with strict layout and biasing requirements. Matching R_DS(on) tolerance (±20%) and symmetrical PCB trace inductance are essential. Gate resistors ≥10 Ω per device and individual source resistors (10–50 mΩ) are recommended to ensure current sharing and prevent thermal runaway during transients.

Does IRFR5305TRRPBF require a heatsink in typical surface-mount applications?

At ≤1.5 W continuous power dissipation (e.g., -10 A @ 0.065 Ω), the D-Pak package can rely on PCB copper area alone if ≥1 in² of 2-oz copper is used. Above 2 W, an external heatsink or thermal pad interface is required-verified by junction temperature calculation using R_θJA = 50 °C/W (PCB mount) and ambient constraints.

How does the body diode performance affect synchronous rectifier design?

The body diode's V_SD = -1.3 V and t_rr = 71 ns define minimum dead-time requirements. Shorter dead-times risk shoot-through; longer ones increase conduction loss. Optimal dead-time is 80–120 ns-measured empirically with oscilloscope probing of V_DS and gate waveforms under load.

IRFR5305TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5305TRRPBF FAQ

1.How can I place an order for IRFR5305TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5305TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5305TRRPBF reliable?

The price and inventory of IRFR5305TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5305TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR5305TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5305TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5305TRRPBF?

IRFR5305TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5305TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5305TRRPBF?

For technical support, including IRFR5305TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5305TRRPBF requirements.

6.How does Aetrix verify that IRFR5305TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR5305TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5305TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR5305TRRPBF?

All IRFR5305TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5305TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5305TRRPBF part is unused and in its original packaging.

Return procedure for IRFR5305TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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