Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR540ZPBF

Name: IRFR540ZPBF
Brand: Infineon Technologies
SKU: IRFR540ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR540ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR540ZPBF.pdf

Description:: MOSFET N-CH 100V 35A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,351

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR540ZPBF from Infineon Technologies is a 100V, 35A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, featuring 28.5mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 91mJ. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFR540ZPBF datasheet, IRFR540ZPBF pinout, IRFR540ZPBF application, or IRFR540ZPBF equivalent, key selection criteria include its low conduction loss at 21A, fast switching (t_r = 42ns, t_f = 34ns), body diode recovery performance (Q_rr = 40–60nC), and robust thermal capability (R_θJC = 1.64°C/W).

Technical Context

This MOSFET employs advanced silicon processing for ultra-low on-resistance per die area and integrates a co-packaged, optimized body diode with 1.3V forward voltage and 32–48ns reverse recovery time. Its gate charge profile (Q_g = 39–59nC, Q_gd = 12nC) supports efficient hard-switching operation up to several hundred kHz.

The device is characterized for unclamped inductive switching with validated repetitive avalanche capability up to T_jmax, enabled by thermal design margins and transient impedance behavior (Z_thJC) documented per Figure 11. Absolute maximum ratings include 140A pulsed drain current and ±20V gate-source voltage tolerance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands up to 100V drain-source blocking voltage before avalanche onset.
R_DS(on)	28.5mΩ max @ V_GS = 10V, T_J = 25°C - Enables <1W conduction loss at 21A DC, critical for thermal management in compact PCB layouts.
I_D (continuous)	35A @ T_C = 25°C - Supports high-current load switching without derating when heatsinked to 25°C case temperature.
Q_g	59nC max - Determines gate drive power requirement and switching speed under 13Ω gate resistance.
T_J max	175°C - Allows sustained operation in high-ambient industrial environments without thermal shutdown.
E_AS	91mJ (tested) - Validates single-pulse unclamped inductive energy handling during fault conditions.
V_SD	1.3V max @ I_S = 21A - Defines forward drop of integrated body diode used in freewheeling or synchronous rectification.

Pinout & Package

IRFR540ZPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 × 6.22 × 2.39 mm and is lead-free/halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-voltage rail; carries full load current in common-source configuration.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node requiring ~59nC total charge to fully enhance; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output (D)	High-side power node; electrically and thermally connected to exposed copper pad; must be routed with low-inductance layout.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	28.5mΩ enables <0.6W conduction loss at 15A, reducing heatsink size and system footprint.
Repetitive avalanche rating	Validated up to T_jmax per AN-1005 - allows reliable operation under inductive turn-off stress without external snubbers.
Fast body diode recovery	Q_rr = 40–60nC, t_rr = 32–48ns - minimizes switching losses and voltage overshoot in buck/flyback freewheeling paths.
175°C junction rating	Supports continuous operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs).
Lead-free/halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile - suitable for automated SMT assembly.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load converter delivering up to 25A output.

IC Role / Device Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: 28.5mΩ R_DS(on) cuts rectifier loss by >60% vs. 0.45V Schottky, enabling higher power density and lower thermal rise.

Use Scenario: H-bridge driver for 24V brushed motors in industrial actuators with bidirectional PWM control.

IC Role / Device Role: Low-side switching element handling 35A peak current during stall or acceleration.

Use Value: 175°C T_jmax and 140A pulsed rating ensure reliability during motor startup surges and short-circuit events.

AC-DC Secondary-Side Rectifier

LED Driver Constant-Current Switch

Use Scenario: Secondary-side synchronous rectification in 65W offline flyback adapter operating at 65kHz.

IC Role / Device Role: Main rectifier switch leveraging body diode conduction during dead-time and MOSFET conduction during active period.

Use Value: Fast t_r/t_f (42ns/34ns) and low Q_gd (12nC) minimize switching loss and EMI generation at high frequency.

Use Scenario: Constant-current dimmable LED driver for architectural lighting with 1–10V analog dimming interface.

IC Role / Device Role: High-side or low-side current-regulating switch modulated at 1–2kHz PWM frequency.

Use Value: Repetitive avalanche capability handles inductive kickback from LED string inductance, eliminating need for external clamp diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 55A I_D, 14mΩ R_DS(on), TO-220 package	Limited to ≤60V systems; higher current but larger through-hole footprint and worse thermal resistance (R_θJC = 2.5°C/W).	Select when higher current and lower R_DS(on) are prioritized over voltage rating and surface-mount compatibility.
IRL540NPBF	100V V_DSS, 36A I_D, 44mΩ R_DS(on) @ 5V gate drive, same D-Pak	Optimized for logic-level drive (V_GS(th) = 1–2V); higher on-resistance reduces efficiency at 10V gate bias.	Choose only if gate drive is limited to 5V; otherwise IRFR540ZPBF delivers superior efficiency at standard 10V drive.

Compared with STP55NF06L and IRL540NPBF, IRFR540ZPBF uniquely balances 100V rating, D-Pak mountability, 28.5mΩ conduction loss, and validated avalanche ruggedness-making it optimal for space-constrained, medium-voltage industrial power stages where thermal and reliability margins are critical.

Availability

IRFR540ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and LED drivers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRFR540ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, computing, and consumer applications-designed for minimal conduction and switching losses while maintaining ruggedness under real-world fault conditions.

FAQ

What is the maximum allowable gate-source voltage for IRFR540ZPBF?

The absolute maximum V_GS rating is ±20V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10V for full enhancement, with typical threshold voltage between 2.0V and 4.0V. Gate resistors should be selected to limit dV/dt-induced shoot-through in half-bridge configurations.

Can IRFR540ZPBF be used in parallel configurations?

Yes, IRFR540ZPBF supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as junction temperature rises. Layout symmetry, matched gate drive paths, and individual gate resistors are required to ensure balanced dynamic current distribution and avoid oscillation.

Does IRFR540ZPBF require a gate resistor, and what value is recommended?

A gate resistor is mandatory to dampen ringing and control switching speed. For 10V gate drive and typical PCB layout, a 10–22Ω resistor is recommended. Lower values increase switching speed but risk EMI and shoot-through; higher values reduce losses but extend switching times and increase transition losses.

Is the body diode in IRFR540ZPBF suitable for continuous freewheeling operation?

Yes-the integrated body diode is rated for continuous source current up to 35A and pulsed current up to 140A. Its 1.3V forward voltage and 40–60nC reverse recovery charge are characterized for use in buck, flyback, and bridge topologies, though synchronous rectification is preferred for highest efficiency.

IRFR540ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR540ZPBF FAQ

1.How can I place an order for IRFR540ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR540ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR540ZPBF reliable?

The price and inventory of IRFR540ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR540ZPBF is usually 5 days.

3.What payment methods are accepted for IRFR540ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR540ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR540ZPBF?

IRFR540ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR540ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR540ZPBF?

For technical support, including IRFR540ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR540ZPBF requirements.

6.How does Aetrix verify that IRFR540ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFR540ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR540ZPBF meets industry standards.

7.What is the process for return or replacement of IRFR540ZPBF?

All IRFR540ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR540ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR540ZPBF part is unused and in its original packaging.

Return procedure for IRFR540ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…