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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR540ZTRRPBF

Name: IRFR540ZTRRPBF
Brand: Infineon Technologies
SKU: IRFR540ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR540ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR540ZTRRPBF.pdf

Description:: MOSFET N-CH 100V 35A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,520

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Product details

Overview

IRFR540ZTRRPBF from Infineon Technologies is a 100V, 35A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, featuring 28.5mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 91mJ. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFR540ZTRRPBF datasheet, IRFR540ZTRRPBF pinout, IRFR540ZTRRPBF application, or IRFR540ZTRRPBF equivalent, key selection criteria include its low conduction loss, fast switching (t_d(on) = 14ns, t_f = 34ns), body diode recovery performance (Q_rr = 40–60nC), and robust thermal design margin enabled by 1.64°C/W R_θJC.

Technical Context

This MOSFET employs advanced silicon processing for ultra-low on-resistance per die area and integrates a co-packaged, optimized body diode with 1.3V forward voltage and 32–48ns reverse recovery time. Its gate charge profile (Q_g = 39–59nC, Q_gd = 12nC) supports efficient high-frequency PWM operation above 100kHz.

The device is characterized for unclamped inductive switching with validated repetitive avalanche capability up to T_jmax, supported by transient thermal impedance data and EAS/E_AR derating curves across pulse width and starting junction temperature. Thermal resistance values (R_θJC = 1.64°C/W, R_θJA = 40°C/W PCB mount) enable precise junction temperature estimation under real load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands up to 100V drain-source blocking voltage before breakdown, suitable for 48V bus and 24V industrial systems.
R_DS(on)	28.5mΩ max @ V_GS = 10V - Enables <1W conduction loss at 21A, reducing heatsink requirements in medium-power SMPS.
I_D @ T_C = 25°C	35A - Continuous drain current rating at case temperature 25°C, defining safe DC operation with adequate heatsinking.
Q_g	59nC max - Total gate charge determines driver strength needed; compatible with standard 1A peak gate drivers at ≤500kHz.
t_f	34ns - Fast fall time minimizes switching loss during turn-off, critical for high-efficiency hard-switched topologies.
E_AS	91mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive switching transients without external snubbers.
T_J max	175°C - High junction temperature rating allows operation in sealed enclosures or high ambient environments without derating.

Pinout & Package

IRFR540ZTRRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads and is RoHS-compliant, halogen-free, and reflow-solderable up to 300°C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Low-side reference node; connects to ground or low-side return path; carries full load current and body diode conduction.
Pin 2 (Gate)	Control electrode	High-impedance input requiring ~59nC charge to fully enhance; sensitive to ESD and layout-induced ringing.
Pin 3 (Drain)	Power output terminal	Connected to high-voltage rail or inductive load; electrically tied to exposed copper pad for thermal dissipation and low-inductance current path.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	28.5mΩ max enables >95% efficiency in 24V/20A buck converters with minimal thermal overhead.
Repetitive avalanche rating	Validated E_AR up to 40mJ at 1% duty cycle supports reliable operation in flyback and LLC resonant circuits.
Fast body diode recovery	Q_rr = 40–60nC and t_rr = 32–48ns reduce cross-conduction loss and EMI in synchronous rectification.
175°C junction rating	Allows full-rated current delivery in automotive under-hood or industrial control cabinet environments up to 105°C ambient.
Low gate-to-drain charge (Q_gd)	12nC limits Miller effect, enabling stable switching with moderate gate resistance (e.g., 13Ω) and reduced risk of shoot-through.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: Driving brushed DC motors in industrial automation controllers with PWM frequencies up to 20kHz and peak currents to 35A.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; handles continuous conduction mode with body diode freewheeling.

Use Value: 28.5mΩ R_DS(on) reduces I²R losses by >30% vs. legacy 50mΩ MOSFETs, lowering thermal stress on PCB copper and eliminating need for forced air cooling.

Use Scenario: Secondary-side synchronous rectification in isolated 48V-to-12V telecom power supplies operating at 300kHz.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with precise timing control.

Use Value: Body diode Q_rr = 40–60nC and V_SD = 1.3V minimize reverse recovery loss and forward drop, improving conversion efficiency by 1.2–1.8% at full load.

UPS Inverter Output Stage

LED Driver High-Side Switch

Use Scenario: Bidirectional output stage in online UPS inverters delivering 1kVA with THD <3% into nonlinear loads.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive unclamped inductive switching during grid failure transitions.

Use Value: 91mJ E_AS and validated repetitive avalanche up to T_jmax eliminate need for external clamping circuits, simplifying BOM and improving fault tolerance.

Use Scenario: Constant-current LED string switching in architectural lighting systems with 36V input and 24V/1.5A output.

IC Role / Device Role / Timing Role: High-side switch controlling LED current via PWM dimming at 1–10kHz, operating in linear and saturated regions.

Use Value: 175°C T_jmax and low R_DS(on) allow sustained 1.5A operation in compact thermally constrained enclosures without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60V V_DSS, 55A I_D, 14mΩ R_DS(on), TO-220 package	Limited to ≤60V systems; higher current but larger footprint and no surface-mount compatibility	Select when higher current and lower R_DS(on) are prioritized over voltage rating and board space.
IRL540NPBF	100V V_DSS, 36A I_D, 44mΩ R_DS(on), logic-level gate (V_GS(th) = 1–2V)	Higher on-resistance increases conduction loss; optimized for 5V drive instead of 10V	Choose only when gate drive is strictly 5V and thermal margin permits 55% higher I²R loss.

Compared with STP55NF06L and IRL540NPBF, IRFR540ZTRRPBF offers optimal balance of 100V rating, D-Pak mountability, and 28.5mΩ conduction loss-making it preferred for space-constrained, medium-voltage industrial power stages where thermal management and avalanche ruggedness are critical.

Availability

IRFR540ZTRRPBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and LED lighting systems requiring stable component supply and long-term production continuity.

Supply support for IRFR540ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and renewable energy systems.

FAQ

Is IRFR540ZTRRPBF suitable for synchronous rectification in a 48V-to-12V LLC converter?

Yes. Its 100V V_DSS, low Q_rr (40–60nC), and fast t_rr (32–48ns) make it well-suited for secondary-side synchronous rectification in 48V-input LLC converters. The 28.5mΩ R_DS(on) ensures low conduction loss at 12V/20A output, and the D-Pak package provides adequate thermal coupling to the PCB for passive cooling.

What is the maximum recommended gate resistor for 300kHz switching?

A 13Ω gate resistor is specified in the datasheet for characterization at 300kHz. For reliable operation, use 10–15Ω with a 1A peak gate driver. Lower values risk ringing and overshoot due to Q_gd-driven Miller feedback; higher values increase switching loss and delay times beyond the 14ns/43ns spec limits.

Does IRFR540ZTRRPBF have a built-in ESD protection diode on the gate?

No. The device lacks integrated gate ESD protection. External gate protection-such as a 12V Zener clamp between gate and source-is required in handling and circuit design to prevent damage from electrostatic discharge exceeding ±20V gate-source rating.

Can IRFR540ZTRRPBF replace IRFR5305 in a high-side switch application?

No. IRFR5305 is a P-channel MOSFET (−100V, −14A), while IRFR540ZTRRPBF is N-channel. Direct replacement would require inverting the drive logic and adding a high-side gate driver, fundamentally changing the circuit topology and increasing complexity and cost.

IRFR540ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR540ZTRRPBF FAQ

1.How can I place an order for IRFR540ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR540ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR540ZTRRPBF reliable?

The price and inventory of IRFR540ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR540ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR540ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR540ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR540ZTRRPBF?

IRFR540ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR540ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR540ZTRRPBF?

For technical support, including IRFR540ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR540ZTRRPBF requirements.

6.How does Aetrix verify that IRFR540ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR540ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR540ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR540ZTRRPBF?

All IRFR540ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR540ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR540ZTRRPBF part is unused and in its original packaging.

Return procedure for IRFR540ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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