Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5410PBF

Name: IRFR5410PBF
Brand: Infineon Technologies
SKU: IRFR5410PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR5410PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5410PBF.pdf

Description:: MOSFET P-CH 100V 13A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,803

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR5410PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, rated for -100 V V_DS, -14 A I_D (T_C = 25°C), and R_DS(on) ≤ 0.20 Ω at V_GS = -10 V. It serves as a high-side load switch or reverse polarity protection device in DC power distribution systems.

For engineers reviewing the IRFR5410PBF datasheet, IRFR5410PBF pinout, IRFR5410PBF application, or IRFR5410PBF equivalent, key selection criteria include verified gate threshold voltage (-2.0 to -4.0 V), avalanche energy rating (E_AS = 444 mJ), body diode forward voltage (V_SD = -1.7 V @ -14 A), and SOA-limited pulse current capability under T_J = 150°C conditions.

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low R_DS(on) and robust unclamped inductive switching (UIS) performance. Its negative gate threshold enables direct interface with microcontroller GPIOs without level-shifting when used in high-side configurations.

The device features a fast intrinsic body diode with t_rr = 85 ns and Q_rr = 110 nC, supporting synchronous rectification in buck-derived topologies. Thermal resistance R_θJC = 2.5°C/W confirms suitability for surface-mount PCB layouts with copper pour heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum drain-to-source blocking voltage for reverse-polarity protection in 48 V industrial systems.
R_DS(on) max	0.20 Ω @ V_GS = -10 V - Enables <1.96 W conduction loss at -14 A continuous drain current.
I_D cont	-14 A @ T_C = 25°C - Sustained current rating with standard D-Pak thermal pad soldering.
V_GS(th)	-2.0 to -4.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive.
E_AS	444 mJ - Confirmed single-pulse avalanche energy for inductive load switching without failure.
Q_G	65 nC - Total gate charge determining required driver peak current for 100 ns switching transitions.
t_r/t_f	25/45 ns - Rise/fall times enabling >1 MHz PWM operation in DC-DC converters.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain tab on bottom side for thermal and electrical connection. Standard 3-pin surface-mount configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to system ground or load return path.
Pin 2 (Gate)	Control input	Receives negative gate voltage relative to source to enable conduction.
Pin 3 (Drain)	Power output	Exposed metal tab; electrically and thermally connected to PCB copper pour.

Key Features

Feature	Design Value
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1; no post-reflow baking required.
Fast body diode recovery	t_rr = 85 ns with Q_rr = 110 nC supports efficient synchronous rectification.
Enhanced UIS ruggedness	Rated for 444 mJ single-pulse avalanche energy without parameter degradation.
Low gate charge	Q_G = 65 nC reduces driver power loss and simplifies gate driver IC selection.

Applications

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Input protection for 24–48 V industrial controllers against accidental battery reversal.

IC Role / Device Role: P-channel MOSFET placed between power input and system rail, blocking reverse current flow.

Use Value: Eliminates need for series Schottky diode, reducing voltage drop from ~0.5 V to <0.1 V at full load.

Use Scenario: Controlled power-up sequencing of FPGA or ASIC core rails in telecom line cards.

IC Role / Device Role: High-side switch enabling soft-start via gate ramp control and inrush limiting.

Use Value: Supports programmable slew rate using external RC on gate, preventing supply rail collapse during hot-plug events.

DC Motor H-Bridge Top Switch

Hot-Swap Controller Back-End

Use Scenario: Upper quadrant switch in brushed DC motor drivers for robotics and actuation.

IC Role / Device Role: Complementary P-MOSFET in half-bridge topology, paired with N-channel low-side switch.

Use Value: Low R_DS(on) minimizes conduction loss during bidirectional PWM, improving thermal margin at 10 kHz switching.

Use Scenario: Output stage of hot-swap controller ICs (e.g., LTC4215) in server backplanes.

IC Role / Device Role: Power FET delivering controlled inrush current and fault isolation during board insertion.

Use Value: Avalanche rating ensures survival during cable discharge events (CDE) up to ±1 kV per IEC 61000-4-2 Level 4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR6215PBF	R_DS(on) = 0.14 Ω @ -10 V; higher I_D = -15 A; same D-Pak package	Better conduction efficiency at high current; slightly higher gate charge (72 nC)	Select when minimizing I²R loss dominates over gate drive complexity.
DMTH10H025LPSQ-13	R_DS(on) = 0.025 Ω @ -10 V; V_DS = -100 V; SO-8 package (not D-Pak)	Lower R_DS(on) but requires different footprint and layout; no exposed drain tab	Choose only if board redesign is acceptable and thermal pad area is constrained.

Compared with IRFR6215PBF and DMTH10H025LPSQ-13, the IRFR5410PBF offers balanced trade-offs: sufficient R_DS(on) for cost-sensitive 48 V systems, proven avalanche reliability, and D-Pak compatibility with legacy thermal designs-making it optimal for incremental upgrades and field-replaceable modules.

Availability

IRFR5410PBF is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, DC motor control, and hot-swap applications requiring stable component supply across automotive aftermarket, industrial automation, and telecom infrastructure programs.

Supply support for IRFR5410PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains full product continuity, quality assurance, and technical documentation for the legacy HEXFET® MOSFET portfolio.

The IRFR5410PBF belongs to the HEXFET® P-channel power MOSFET family, engineered for high-efficiency DC power control in space-constrained, thermally demanding applications where ruggedness and gate-drive simplicity are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR5410PBF is rated for continuous operation up to T_J = 175°C. Derating begins at T_C = 125°C per the SOA curve; at T_C = 100°C, maximum continuous I_D drops to -9.5 A. Thermal design must ensure R_θJA remains ≤ 45°C/W with ≥1 in² 2-oz copper pour for safe operation at full rated current.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with Q_g and C_iss. Without it, ringing above 100 MHz may cause false turn-on or increased EMI. The resistor value should be selected based on driver rise time and layout parasitics-not omitted even in low-frequency switching.

Can IRFR5410PBF replace an N-channel MOSFET in a high-side position?

No-it cannot directly replace an N-channel MOSFET without circuit modification. As a P-channel device, it turns on with V_GS < V_th (negative gate bias), whereas N-channel high-side switches require bootstrap or isolated gate drive. Swapping requires gate driver redesign and verification of shoot-through immunity in bridge configurations.

Is the body diode suitable for freewheeling in a buck converter?

Yes-the body diode has t_rr = 85 ns and Q_rr = 110 nC, making it usable for low-frequency (<200 kHz) freewheeling. However, for synchronous rectification above 300 kHz, an external Schottky diode or dedicated synchronous rectifier IC is preferred to minimize reverse recovery losses and EMI generation.

IRFR5410PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 205mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5410PBF FAQ

1.How can I place an order for IRFR5410PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5410PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5410PBF reliable?

The price and inventory of IRFR5410PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5410PBF is usually 5 days.

3.What payment methods are accepted for IRFR5410PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5410PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5410PBF?

IRFR5410PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5410PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5410PBF?

For technical support, including IRFR5410PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5410PBF requirements.

6.How does Aetrix verify that IRFR5410PBF is sourced from the original manufacturer or authorized distributors?

All IRFR5410PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5410PBF meets industry standards.

7.What is the process for return or replacement of IRFR5410PBF?

All IRFR5410PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5410PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5410PBF part is unused and in its original packaging.

Return procedure for IRFR5410PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…