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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5410TR

Name: IRFR5410TR
Brand: Infineon Technologies
SKU: IRFR5410TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR5410TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5410TR.pdf

Description:: MOSFET P-CH 100V 13A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR5410TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -100 V V_DS, 0.205 Ω R_DS(on) at V_GS = -10 V, and -13 A continuous drain current at T_C = 25 °C. It features fully avalanche-rated ruggedness, fast switching (t_r = 58 ns), and low gate charge (Q_g = 58 nC), enabling use in high-efficiency DC-DC converters and industrial motor control H-bridge top switches.

For engineers reviewing the IRFR5410TR datasheet, IRFR5410TR pinout, IRFR5410TR application, or IRFR5410TR equivalent, key selection criteria include verified P-channel logic-level compatibility, junction-to-case thermal resistance of 1.9 °C/W, body diode reverse recovery time (t_rr = 130–190 ns), and SOA-limited operation up to 150 °C junction temperature.

Technical Context

This device operates as a high-side switch in buck regulators and load-switching circuits, leveraging its negative threshold voltage (-2.0 to -4.0 V) and low on-resistance to minimize conduction loss in 12–48 V industrial power rails. Its D-Pak thermomechanical design supports PCB-mounted thermal dissipation up to 66 W at T_C = 25 °C with linear derating of 0.53 W/°C.

The MOSFET integrates a co-packaged body diode with V_SD = -1.6 V at I_S = -7.8 A and exhibits controlled dv/dt capability (-5.0 V/ns peak) under inductive turn-off, validated per unclamped inductive switching tests with E_AS = 194 mJ and I_AR = -8.4 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum blocking voltage for high-side switching in 48 V nominal systems
R_DS(on)	0.205 Ω @ V_GS = -10 V - Enables ≤1.4 W conduction loss at -7.8 A continuous load
I_D (T_C = 25 °C)	-13 A - Sustains full-load current in compact surface-mount power stages without forced cooling
Q_g	58 nC - Reduces gate drive power and enables efficient operation with standard 12 V gate drivers
t_r/t_f	58 ns / 46 ns - Supports >200 kHz switching in synchronous rectified converters
E_AS	194 mJ - Withstands single-pulse inductive energy without failure in motor drive fault conditions
θ_JC	1.9 °C/W - Allows direct heatsinking via PCB copper pour or external clip for thermal management

Pinout & Package

IRFR5410TR uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package measures 6.73 × 6.35 mm with 1.27 mm lead pitch and is JEDEC-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Accepts negative V_GS to modulate channel; requires <100 nA leakage handling in high-impedance bias networks
2 - Drain	High-side power output	Connected to input rail; electrically tied to exposed backside metal for thermal conduction and low-inductance return path
3 - Source	Reference node	Common return for load current and gate drive reference; defines V_GS control voltage relative to load ground
4 - Drain	Redundant drain connection	Parallel path to Pin 2; improves current sharing and reduces package inductance in high-di/dt applications

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.205 Ω enables <1.5 W conduction loss at -7.8 A, reducing thermal footprint in space-constrained PCB layouts
Fully avalanche rated	194 mJ single-pulse E_AS eliminates need for external snubbers in inductive load switching
P-channel configuration	Negatively biased gate simplifies high-side drive architecture-no bootstrap capacitor or level shifter required
Fast body diode	t_rr = 130–190 ns and Q_rr = 650–970 nC support efficient synchronous rectification in buck topologies

Applications

Industrial Motor Control

Telecom DC-DC Converters

Use Scenario: High-side switch in half-bridge driver for 24–48 V brushed DC motors in PLC I/O modules.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled turn-on/turn-off of motor phase with integrated body diode freewheeling.

Use Value: R_DS(on) = 0.205 Ω limits I²R loss to <1.7 W at 9 A, enabling convection-cooled operation in sealed enclosures.

Use Scenario: Input-side hot-swap protection and inrush limiting in 48 V intermediate bus converters.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream POL regulators during system startup and fault events.

Use Value: -100 V rating and -13 A current capacity ensure robust operation across telecom transient surges (IEC 61000-4-5 Level 4).

Automotive Body Electronics

Programmable Power Supplies

Use Scenario: Reverse polarity protection and battery disconnect in 12 V vehicle lighting control units.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between battery and load, activated only when V_GS < V_th.

Use Value: V_GS(th) = -2.0 to -4.0 V ensures reliable turn-on with standard 12 V microcontroller GPIO, eliminating external level translation.

Use Scenario: Precision programmable current sink in lab-grade bench power supplies with remote sense feedback.

IC Role / Device Role / Timing Role: Linear-mode pass element operating in active region with gate voltage modulation for current regulation.

Use Value: Low R_DS(on) tolerance and stable g_fs = 3.2 S enable ±0.5% current accuracy over 0–10 A range at 25–100 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9120TRPBF	V_DS = -100 V, R_DS(on) = 0.27 Ω, Q_g = 42 nC, TO-252AA	Higher R_DS(on) increases conduction loss by ~32% at same current; lower Q_g improves switching efficiency	Prefer when gate drive strength is limited but thermal margin allows higher on-state loss
STP12PF06	V_DS = -60 V, R_DS(on) = 0.22 Ω, Q_g = 40 nC, TO-220	Lower voltage rating restricts use to ≤48 V systems; through-hole package increases board area and thermal resistance	Select only if legacy TO-220 layout exists and 60 V max blocking suffices

Compared with IRFR9120TRPBF and STP12PF06, IRFR5410TR delivers the lowest R_DS(on) among TO-252AA P-channel -100 V devices, making it optimal for thermally constrained high-current switching where conduction loss dominates total power dissipation.

Availability

IRFR5410TR is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC converters, automotive body electronics, and programmable power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFR5410TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's pioneering HEXFET® technology.

The IRFR/U5410 series belongs to Infineon's industrial-grade discrete power MOSFET product line, engineered for rugged high-side switching in harsh environments including factory automation, telecom infrastructure, and transportation systems.

FAQ

Is IRFR5410TR suitable for logic-level gate drive?

No. IRFR5410TR has a gate threshold voltage range of -2.0 V to -4.0 V and requires -10 V for specified R_DS(on); it is not a logic-level MOSFET. Driving it with 3.3 V or 5 V microcontroller outputs will result in incomplete turn-on and excessive conduction loss. A dedicated negative gate driver or level-shifting circuit is required for full enhancement.

What is the maximum allowable PCB copper area for thermal relief?

Per IR application note AN-994, the recommended footprint for IRFR5410TR on FR-4 PCB is a 1-inch square (25.4 mm × 25.4 mm) copper pour connected to the drain pad via ≥4 thermal vias (0.3 mm diameter, spaced ≤1.5 mm apart). This achieves the published θ_JA = 50 °C/W; larger areas yield marginal improvement due to convection limits.

Does IRFR5410TR include integrated ESD protection?

No. IRFR5410TR does not integrate on-die ESD protection structures. Its gate oxide is rated for ±20 V absolute maximum V_GS, and exposure to static discharge above ±10 V can cause latent damage. External gate resistors (≥10 Ω) and TVS diodes between gate and source are strongly recommended in automated assembly and field-deployed systems.

Can IRFR5410TR replace IRFU5410 in existing designs?

Only mechanically-not electrically. IRFR5410TR uses TO-252AA (surface-mount), while IRFU5410 uses TO-251AA (straight-lead through-hole); their footprints and soldering methods are incompatible. Electrical specs are identical, but substitution requires PCB redesign, requalification of thermal performance, and validation of mechanical stress on leads during board flexure.

IRFR5410TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 205mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5410TR FAQ

1.How can I place an order for IRFR5410TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5410TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5410TR reliable?

The price and inventory of IRFR5410TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5410TR is usually 5 days.

3.What payment methods are accepted for IRFR5410TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5410TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5410TR?

IRFR5410TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5410TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5410TR?

For technical support, including IRFR5410TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5410TR requirements.

6.How does Aetrix verify that IRFR5410TR is sourced from the original manufacturer or authorized distributors?

All IRFR5410TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5410TR meets industry standards.

7.What is the process for return or replacement of IRFR5410TR?

All IRFR5410TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5410TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5410TR part is unused and in its original packaging.

Return procedure for IRFR5410TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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