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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5410TRL

Name: IRFR5410TRL
Brand: Infineon Technologies
SKU: IRFR5410TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR5410TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5410TRL.pdf

Description:: MOSFET P-CH 100V 13A DPAK

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Product details

Overview

IRFR5410TRL from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -100 V V_DS, 0.205 Ω R_DS(on) at V_GS = -10 V, and -13 A continuous drain current at T_C = 25°C. It features fully avalanche-rated ruggedness, fast switching (t_r = 58 ns, t_f = 46 ns), and low gate charge (Q_g = 58 nC), enabling use in high-efficiency DC-DC converters and motor control H-bridge high-side switches.

For engineers reviewing the IRFR5410TRL datasheet, IRFR5410TRL pinout, IRFR5410TRL application, or IRFR5410TRL equivalent, key selection criteria include verified P-channel logic-level compatibility, junction-to-case thermal resistance of 1.9 °C/W, body diode reverse recovery time (130–190 ns), and avalanche energy rating (194 mJ single-pulse).

Technical Context

This device operates as a high-side load switch or synchronous rectifier in negative-rail power architectures. Its P-channel topology eliminates external level-shifting circuitry for gate drive, while its 0.205 Ω on-resistance at -10 V gate bias ensures low conduction loss at moderate currents up to -8.2 A at 100°C case temperature.

The MOSFET integrates a co-packaged body diode with V_SD = -1.6 V at -7.8 A and exhibits controlled dv/dt capability (-5.0 V/ns peak) under diode recovery. Its 760 pF input capacitance (C_iss) and 170 pF reverse transfer capacitance (C_rss) support stable high-frequency switching when paired with appropriate gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Withstands reverse-biased drain-source voltage up to this rating without breakdown
R_DS(on)	0.205 Ω @ V_GS = -10 V - Enables ≤1.4 W conduction loss at -7.8 A continuous current
I_D (T_C = 25°C)	-13 A - Maximum continuous drain current with heatsink or PCB copper area providing 1.9 °C/W thermal path
Q_g	58 nC - Determines gate driver current requirement (~1.2 mA avg. for 100 kHz switching)
t_r/t_f	58 ns / 46 ns - Defines minimum practical switching period and EMI profile in hard-switched topologies
E_AS	194 mJ - Supports unclamped inductive turn-off events without failure in motor drive or solenoid control
V_GS(th)	-2.0 to -4.0 V - Confirms reliable turn-on with standard -5 V or -10 V logic-level gate drive

Pinout & Package

IRFR5410TRL uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package measures 6.73 × 6.35 mm and supports vapor-phase, infrared, or wave soldering per AN-994 guidelines.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts negative gate voltage relative to source; threshold range -2.0 to -4.0 V enables direct microcontroller interface with inverted logic
2 (Drain)	Main current output	Internally connected to exposed metal tab; must be routed to high-current negative rail with thermal relief
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; ties to system ground or negative supply common
4 (Drain)	Secondary drain connection	Parallel path to Pin 2 for reduced inductance and improved thermal spreading across PCB copper pour

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.205 Ω minimizes I²R losses in 12–48 V industrial power rails operating near -8 A
Fully avalanche-rated	194 mJ single-pulse energy rating allows safe operation during inductive load switching transients without snubbers
P-channel surface-mount	TO-252AA footprint simplifies high-side switch layout in space-constrained DC-DC controllers and battery protection circuits
Fast body diode recovery	130–190 ns t_rr and 650–970 nC Q_rr reduce switching loss and ringing in synchronous buck or half-bridge configurations

Applications

Industrial Motor Control

Telecom DC-DC Converters

Use Scenario: High-side switch in 24 V brushed DC motor H-bridge for factory automation actuators.

IC Role / Device Role / Timing Role: P-channel MOSFET controlling positive rail connection to motor winding; operates in linear or PWM mode with <50 ns switching transitions.

Use Value: 0.205 Ω R_DS(on) limits conduction loss to <1.3 W at 8 A, reducing heatsink requirements versus higher-R_DS(on) alternatives.

Use Scenario: Synchronous rectifier in isolated 48 V to 12 V telecom power supply secondary side.

IC Role / Device Role / Timing Role: Reverse-polarity switch replacing Schottky diode to improve efficiency; body diode conducts during dead-time.

Use Value: -1.6 V V_SD and 130 ns t_rr enable lower forward drop and faster commutation than discrete 40 V Schottkys in same footprint.

Battery Management Systems

Automotive Body Control Modules

Use Scenario: Reverse-polarity protection and load switch for 24 V lead-acid battery backup systems.

IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery and system bus; gate driven by microcontroller GPIO.

Use Value: -4.0 V maximum V_GS(th) ensures full enhancement even with degraded 3.3 V MCU outputs, preventing partial turn-on failure modes.

Use Scenario: Window lift/lower control in automotive door modules using dual-MOSFET half-bridge.

IC Role / Device Role / Timing Role: High-side switch complementing N-channel low-side MOSFET; withstands load dump transients up to -100 V.

Use Value: 110 °C/W R_θJA (PCB mount) and -55 to +150 °C T_J rating meet AEC-Q101 ambient and transient stress requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR5305TRLPBF	V_DS = -55 V, R_DS(on) = 0.065 Ω @ -10 V - lower voltage rating but significantly lower on-resistance	Not suitable for 100 V bus protection; preferred in 24–48 V high-current loads where <0.1 Ω is critical	Select when system max V_DS < 60 V and R_DS(on) reduction outweighs voltage margin loss
STP12PF06	V_DS = -60 V, R_DS(on) = 0.15 Ω @ -10 V, TO-220 package - through-hole, higher R_DS(on), no D-Pak thermal advantage	Requires through-hole assembly and larger heatsink; unsuitable for dense SMT layouts	Choose only if board design mandates through-hole mounting or legacy TO-220 footprint compatibility

Compared with IRFR5410TRL, IRFR5305TRLPBF trades voltage headroom for lower conduction loss in mid-voltage rails, while STP12PF06 sacrifices surface-mount efficiency and thermal performance for mechanical robustness and legacy compatibility.

Availability

IRFR5410TRL is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC conversion, and automotive body electronics requiring stable component supply across extended production lifecycles.

Supply support for IRFR5410TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with roots in International Rectifier's pioneering HEXFET® technology.

The IRFR/U5410 series belongs to Infineon's industrial-grade P-channel power MOSFET product line, engineered for high-reliability switching in negative-rail power distribution, load switching, and synchronous rectification where gate drive simplicity and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR5410TRL supports -8.2 A continuous drain current at T_C = 100°C with V_GS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252AA package and requires adequate PCB copper area or heatsinking to maintain junction temperature below 150°C.

Does this MOSFET require a gate driver for microcontroller-level signals?

No external gate driver is required for standard -5 V or -10 V logic-level control, as V_GS(th) ranges from -2.0 V to -4.0 V. However, for fast switching (>100 kHz) or high-current loads, a dedicated P-channel gate driver improves rise/fall times and reduces switching losses by delivering peak currents >100 mA during transitions.

Can IRFR5410TRL replace an N-channel MOSFET in a high-side configuration?

Yes - its P-channel architecture is specifically designed for high-side switching without bootstrap circuitry. Unlike N-channel devices, it turns on with gate voltage lower than source, enabling direct interface to microcontroller GPIOs referenced to system ground, provided the gate drive swings sufficiently negative relative to source.

Is the body diode suitable for freewheeling in inductive loads?

Yes - the integrated body diode has V_SD = -1.6 V at -7.8 A and t_rr = 130–190 ns, making it suitable for freewheeling in DC motor drives and relay coils. Its fast recovery and 194 mJ avalanche rating allow safe energy dissipation during inductive turn-off without external diodes in many applications.

IRFR5410TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 205mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5410TRL FAQ

1.How can I place an order for IRFR5410TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5410TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5410TRL reliable?

The price and inventory of IRFR5410TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5410TRL is usually 5 days.

3.What payment methods are accepted for IRFR5410TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5410TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5410TRL?

IRFR5410TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5410TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5410TRL?

For technical support, including IRFR5410TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5410TRL requirements.

6.How does Aetrix verify that IRFR5410TRL is sourced from the original manufacturer or authorized distributors?

All IRFR5410TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5410TRL meets industry standards.

7.What is the process for return or replacement of IRFR5410TRL?

All IRFR5410TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5410TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5410TRL part is unused and in its original packaging.

Return procedure for IRFR5410TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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