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Infineon Technologies IRFR5410TRLPBF
- Part No.:
- IRFR5410TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR5410TRLPBF.pdf
- Description:
- MOSFET P-CH 100V 13A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,909
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Product details
Overview
IRFR5410TRLPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, rated for -100 V VDS, -14 A ID (TC = 25°C), and RDS(on) ≤ 0.20 Ω at VGS = -10 V. It serves as a high-side load switch or reverse polarity protection device in DC power distribution systems.
For engineers reviewing the IRFR5410TRLPBF datasheet, IRFR5410TRLPBF pinout, IRFR5410TRLPBF application, or IRFR5410TRLPBF equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0 V), low gate charge (QG = 38 nC), avalanche-rated ruggedness (EAS = 440 mJ), and lead-free RoHS-compliant construction.
Technical Context
This MOSFET employs a planar trench-gate structure optimized for low conduction loss and fast switching in hard-switched DC-DC converters and motor control H-bridge high-side legs. Its body diode exhibits trr = 110 ns and QRR = 70 nC at IF = -14 A, enabling efficient synchronous rectification replacement in buck topologies.
The device features a specified gate threshold voltage range of -2.0 V to -4.0 V, ensuring reliable turn-on with standard logic-level gate drivers (e.g., -5 V or -8 V supplies), and supports pulsed drain currents up to -35 A under TJ ≤ 150°C conditions per SOA curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Maximum blocking voltage for high-voltage DC bus protection |
| RDS(on) @ VGS = -10 V | ≤ 0.20 Ω - Enables <1.96 W conduction loss at -14 A continuous current |
| ID (TC = 25°C) | -14 A - Continuous drain current rating at heatsink-mounted condition |
| QG | 38 nC - Gate drive energy requirement for 100 kHz switching at -10 V drive |
| EAS | 440 mJ - Single-pulse avalanche energy tolerance for inductive load switching |
| VGS(th) | -2.0 to -4.0 V - Ensures full enhancement with -5 V logic-compatible gate drivers |
| tr/tf | 25/40 ns - Fast transition times support >500 kHz PWM operation with minimal switching loss |
Pinout & Package
Package: D-Pak (TO-252AA), surface-mount, single-die configuration with exposed drain pad for thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Reference node for gate drive; connects to system ground or low-side return path |
| Pin 2 (Gate) | Control input | Receives negative gate voltage relative to source to turn on P-channel channel |
| Pin 3 (Drain) | Power output | High-side connection point to positive rail; electrically tied to exposed metal tab |
Key Features
| Feature | Design Value |
|---|---|
| Lead-free and RoHS compliant | Meets IPC-J-STD-609 Class 3 halogen-free requirements; no Pb, Cd, Hg, Cr⁶⁺, PBB, PBDE |
| 100% Rg tested | Each unit verified for gate resistance stability to prevent oscillation in high-dI/dt applications |
| Avalanche rated | Guaranteed single-pulse EAS = 440 mJ enables robust operation during inductive turn-off transients |
| Low QGD/QG ratio | QGD = 15 nC / QG = 38 nC - Improves Miller immunity and reduces risk of false turn-on |
Applications
| Reverse Polarity Protection | Battery Management Systems |
|---|---|
Use Scenario: Prevents damage from accidental battery reversal in 24–48 V industrial equipment. IC Role / Device Role / Timing Role: High-side P-MOSFET acting as ideal diode replacement with near-zero forward drop. Use Value: Eliminates 0.3–0.7 V diode drop, improving efficiency by up to 2.5% at 10 A and reducing thermal load on PCB. | Use Scenario: Isolates backup LiFePO₄ battery banks during charging and fault conditions. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch controlled by battery monitor IC. Use Value: Supports ±14 A continuous bidirectional current with RDS(on) symmetry, minimizing voltage imbalance across parallel cells. |
| DC-DC Converter High-Side Switch | Motor Control H-Bridge |
Use Scenario: High-side switch in non-synchronous buck converter for telecom power modules. IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with fixed off-time control. Use Value: Low QG and fast tf reduce gate drive losses and enable clean zero-voltage switching transitions. | Use Scenario: Upper-leg switch in 24 V brushed DC motor driver for HVAC actuators. IC Role / Device Role / Timing Role: High-side element in half-bridge topology driven by isolated gate driver. Use Value: Avalanche rating withstands inductive kickback during PWM dead-time, eliminating need for external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET high-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR6215PBF | VDS = -150 V, RDS(on) = 0.24 Ω @ -10 V, QG = 42 nC | Higher voltage rating suits 72 V battery systems; higher RDS(on) increases conduction loss | Select when system max bus voltage exceeds 100 V; verify thermal margin at same current |
| STP12PF06 | VDS = -60 V, RDS(on) = 0.18 Ω @ -10 V, QG = 30 nC | Lower voltage rating but lower gate charge and on-resistance for 48 V systems | Prefer for space-constrained 48 V designs needing faster switching and lower drive power |
Compared with IRFR6215PBF and STP12PF06, IRFR5410TRLPBF offers optimal balance of 100 V rating, 0.20 Ω on-resistance, and 38 nC gate charge for 24–48 V industrial power rails where avalanche robustness and thermal reliability are critical.
Availability
IRFR5410TRLPBF is available at Aetrix Electronics and suitable for reverse polarity protection, battery management systems, DC-DC converter high-side switching, and motor control H-bridge applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFR5410TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The StrongIRFET™ product line-under which IRFR5410TRLPBF is categorized-is engineered for high-reliability power switching in harsh-environment industrial and transportation systems, emphasizing avalanche ruggedness, thermal stability, and gate drive compatibility.
FAQ
What is the maximum junction temperature for continuous operation?
The IRFR5410TRLPBF has a maximum continuous junction temperature of 150°C, validated per JEDEC JESD22-A108. Derating is required above TC = 25°C per the thermal resistance curve (RθJC = 2.5°C/W). At TC = 100°C, maximum continuous ID drops to approximately -7.5 A to maintain TJ ≤ 150°C.
Is this part suitable for use with 3.3 V microcontroller gate drive?
No. The IRFR5410TRLPBF requires VGS ≤ -5 V for full enhancement; 3.3 V logic cannot produce the necessary negative gate-source bias. A dedicated gate driver (e.g., TC4427 with negative supply or charge pump) is required to generate -5 V to -10 V relative to source.
Does it have integrated ESD protection on the gate?
Yes. The device incorporates gate oxide ESD protection rated to ≥2 kV HBM (Human Body Model), as confirmed in the official Infineon datasheet Rev. 1.20. This allows safe handling during assembly without requiring additional external gate resistors for ESD mitigation.
Can it replace an N-channel MOSFET in a high-side configuration without redesign?
No. Replacing an N-channel high-side switch with IRFR5410TRLPBF requires inverting the control logic (active-low vs. active-high), adjusting gate drive voltage polarity, and verifying layout clearance for negative gate swing. It is not a drop-in replacement due to fundamental P-channel operational differences.
IRFR5410TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 205mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 66W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR5410TRLPBF FAQ
1.How can I place an order for IRFR5410TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR5410TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR5410TRLPBF reliable?
The price and inventory of IRFR5410TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5410TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR5410TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5410TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR5410TRLPBF?
IRFR5410TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR5410TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR5410TRLPBF?
For technical support, including IRFR5410TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5410TRLPBF requirements.
6.How does Aetrix verify that IRFR5410TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR5410TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5410TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR5410TRLPBF?
All IRFR5410TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5410TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR5410TRLPBF part is unused and in its original packaging.
Return procedure for IRFR5410TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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