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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5505

Name: IRFR5505
Brand: Infineon Technologies
SKU: IRFR5505
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR5505

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5505.pdf

Description:: MOSFET P-CH 55V 18A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,554

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Product details

Overview

IRFR5505 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -55V V_DS, 0.11Ω R_DS(on) at V_GS = -10V, and -18A continuous drain current at T_C = 25°C. It features fully avalanche-rated ruggedness, fast switching (t_r = 28 ns), and low gate charge (Q_g = 32 nC), enabling use in high-efficiency DC-DC converters and load-switching circuits.

For engineers reviewing the IRFR5505 datasheet, IRFR5505 pinout, IRFR5505 application, or IRFR5505 equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0 V), body diode forward voltage (-1.6 V at -9.6 A), reverse recovery charge (110–160 nC), and thermal resistance (R_θJC = 2.2°C/W), critical for thermal design in compact power stages.

Technical Context

The IRFR5505 operates as a high-side or common-source P-channel switch with gate-controlled conduction between drain and source. Its negative V_GS(th) enables direct logic-level drive from microcontrollers with open-drain or inverted outputs, and its low R_DS(on) minimizes conduction loss in battery-powered systems where reverse polarity protection or hot-swap control is required.

Designed using fifth-generation HEXFET processing, it delivers improved transconductance (g_fs = 4.2 S) and reduced output capacitance (C_oss = 270 pF), supporting higher switching frequencies while maintaining robust unclamped inductive switching capability (E_AS = 150 mJ) and dv/dt immunity (-5.0 V/ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-55 V - Maximum reverse drain-to-source blocking voltage; defines safe operating range in negative-rail applications.
R_DS(on)	0.11 Ω @ V_GS = -10 V, I_D = -9.6 A - Low on-resistance ensures ≤10 W conduction loss at full rated current.
I_D (continuous)	-18 A @ T_C = 25°C - Supports high-current load switching without external heatsinking in PCB-mounted designs.
Q_g	32 nC - Total gate charge determines driver strength requirement; enables efficient 100–500 kHz PWM operation.
R_θJC	2.2 °C/W - Junction-to-case thermal resistance allows direct thermal coupling to copper pour or heatsink for thermal management.
E_AS	150 mJ - Single-pulse avalanche energy rating confirms reliability under inductive turn-off stress without snubbers.
V_SD	-1.6 V @ I_S = -9.6 A - Body diode forward voltage impacts efficiency in synchronous rectification or freewheeling paths.

Pinout & Package

IRFR5505 uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package has three active terminals and one redundant drain connection (pin 4), optimized for PCB heat dissipation and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives negative gate drive relative to source; threshold range (-2.0 to -4.0 V) supports direct MCU interface with level-shifting.
2 (Drain)	High-side power node	Primary current-carrying terminal connected to negative supply rail; electrically tied to exposed backside metal pad.
3 (Source)	Reference node / return path	Connected to system ground or load return; serves as gate drive reference and current sense point in high-side configurations.
4 (Drain)	Secondary drain connection	Redundant drain terminal for enhanced current handling and lower package inductance; must be soldered to same net as pin 2.

Key Features

Feature	Design Value
Fully avalanche-rated	150 mJ single-pulse energy withstand without failure-enables robust operation in inductive load switching without external clamping.
Ultra-low R_DS(on)	0.11 Ω at -10 V gate drive-reduces I²R losses by >30% vs. comparable P-channel MOSFETs in 12 V/24 V industrial power rails.
Fast switching speed	t_r = 28 ns, t_f = 16 ns-supports high-frequency DC-DC topologies up to 1 MHz with minimal switching loss.
Low gate charge	Q_g = 32 nC, Q_gd = 15 nC-reduces driver power consumption and simplifies gate driver selection for microcontroller-based control.
Surface-mount D-Pak	TO-252AA outline with exposed drain pad-enables high-current PCB routing and thermal transfer to internal copper layers without through-hole mounting.

Applications

Battery Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Preventing damage from incorrect battery insertion in portable medical devices and handheld test equipment.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in series with battery positive line; conducts only when V_GS < V_th.

Use Value: Eliminates 0.3–0.7 V diode drop, preserving battery runtime; R_DS(on) = 0.11 Ω limits voltage loss to <100 mV at 1 A load.

Use Scenario: Controlled power-up of FPGA banks or sensor subsystems in industrial PLC modules.

IC Role / Device Role / Timing Role: High-side switch isolating downstream circuitry until firmware validates power integrity and configuration.

Use Value: Fast turn-on (t_d(on) = 12 ns) and low leakage (<25 µA) ensure precise sequencing and zero standby current during sleep mode.

DC-DC Synchronous Buck Topology

Hot-Swap Controller Front-End

Use Scenario: Upper switch in non-isolated 12 V to 3.3 V buck converter for telecom baseband boards.

IC Role / Device Role / Timing Role: High-side P-channel switch complementing N-channel synchronous rectifier; driven by dedicated gate controller.

Use Value: C_oss = 270 pF and Q_gd/Q_gs ratio support ZVS-capable operation, reducing switching loss by ~22% versus standard P-channel alternatives.

Use Scenario: Inrush current limiting and fault isolation in modular server power distribution units.

IC Role / Device Role / Timing Role: Main pass element in discrete hot-swap circuit with external current-sense amplifier and comparator.

Use Value: Avalanche rating (E_AS = 150 mJ) and fast dv/dt immunity (-5.0 V/ns) prevent failure during live-insertion transients and short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR9343PbF	V_DS = -30 V, R_DS(on) = 0.012 Ω @ V_GS = -10 V, TO-251AA package	Lower voltage rating but 9× lower R_DS(on); requires smaller gate drive due to lower Q_g (22 nC)	Select for 12 V systems prioritizing conduction loss over blocking margin; not suitable for -48 V or -55 V rails.
DMG2305UVT	V_DS = -20 V, R_DS(on) = 0.045 Ω @ V_GS = -4.5 V, SOT-23 package	Logic-level compatible down to -2.5 V V_GS(th); much lower power handling (P_D = 1.4 W)	Choose for space-constrained, low-current (<2 A) logic-driven switches; unsuitable for >5 A loads or high-power thermal environments.

Compared with IRFR5505, IRLL9343PbF offers superior conduction efficiency in 30 V systems but sacrifices voltage headroom, while DMG2305UVT enables ultra-compact logic-level switching at sub-amp levels-neither matches the IRFR5505's balanced combination of -55 V rating, 18 A capacity, and D-Pak thermal performance.

Availability

IRFR5505 is available at Aetrix Electronics and suitable for battery protection circuits, high-side load switching, DC-DC converter power stages, and hot-swap front-end designs requiring stable component supply and long-term industrial availability.

Supply support for IRFR5505 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with legacy expertise from International Rectifier's HEXFET® technology.

The IRFR5505 belongs to the fifth-generation HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in space-constrained industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current for IRFR5505 at 100°C case temperature?

The IRFR5505 supports -11 A continuous drain current at T_C = 100°C with V_GS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252AA package and must be verified against actual PCB copper area and ambient conditions using R_θJA = 50°C/W (PCB mount) or 110°C/W (free air).

Can IRFR5505 be driven directly by a 3.3 V microcontroller GPIO?

No-IRFR5505 has a V_GS(th) range of -2.0 V to -4.0 V and requires ≥-10 V for full R_DS(on) specification. A 3.3 V GPIO cannot produce sufficient negative gate-source voltage; a level-shifting driver or charge pump is required to achieve reliable enhancement-mode conduction.

Does IRFR5505 include an integrated body diode, and what are its key parameters?

Yes-the IRFR5505 integrates a monolithic p-n junction body diode between source and drain. Key parameters include V_SD = -1.6 V at I_S = -9.6 A and T_J = 25°C, reverse recovery time t_rr = 51–77 ns, and Q_rr = 110–160 nC, making it suitable for freewheeling in buck converters but not optimized for synchronous rectification.

What is the recommended PCB footprint and soldering method for TO-252AA package?

The IRFR5505 TO-252AA package requires a thermally enhanced footprint per JEDEC MS-012, including a large copper pour connected to pins 2 and 4 (drain) for heat dissipation. Recommended soldering methods are vapor phase or infrared reflow; wave soldering is acceptable for lead-free assembly, with peak temperature limited to 300°C for 10 seconds at 1.6 mm from case edge.

IRFR5505 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5505 FAQ

1.How can I place an order for IRFR5505 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5505 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5505 reliable?

The price and inventory of IRFR5505 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5505 is usually 5 days.

3.What payment methods are accepted for IRFR5505?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5505 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5505?

IRFR5505 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5505 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5505?

For technical support, including IRFR5505 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5505 requirements.

6.How does Aetrix verify that IRFR5505 is sourced from the original manufacturer or authorized distributors?

All IRFR5505 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5505 meets industry standards.

7.What is the process for return or replacement of IRFR5505?

All IRFR5505 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5505, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5505 part is unused and in its original packaging.

Return procedure for IRFR5505:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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