My Inquiry
My Account
Infineon Technologies IRFR5505CPBF
- Part No.:
- IRFR5505CPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR5505CPBF.pdf
- Description:
- MOSFET P-CH 55V 18A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,912
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR5505CPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for 55 V VDSS, 18 A continuous drain current (ID), and 0.075 Ω RDS(on) at VGS = −10 V, used as a high-side load switch in DC-DC converters and motor control H-bridges.
For engineers reviewing the IRFR5505CPBF datasheet, IRFR5505CPBF pinout, IRFR5505CPBF application, or IRFR5505CPBF equivalent, key selection criteria include gate threshold voltage (VGS(th) = −2.0 to −4.0 V), low gate charge (Qg = 32 nC), SOA compliance at 100 µs pulse width, and DPAK package thermal resistance (RθJA = 60 °C/W).
Technical Context
This MOSFET operates in enhancement mode with negative gate drive, requiring VGS ≤ −2.0 V to initiate conduction and fully enhancing at −10 V. Its body diode exhibits 45 ns reverse recovery time (trr) and 35 A peak forward current rating.
The device supports unclamped inductive switching (UIS) up to 190 mJ at TJ = 25 °C and complies with JEDEC JESD47 reliability standards for 1000-hour HTOL testing at 125 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −55 V: Maximum drain-source blocking voltage before avalanche breakdown |
| ID (continuous) | 18 A at TC = 25 °C: Continuous current capability with heatsink |
| RDS(on) | 0.075 Ω @ VGS = −10 V: On-resistance determining conduction loss in power path |
| VGS(th) | −2.0 to −4.0 V: Gate voltage range where device transitions from cutoff to linear region |
| Qg | 32 nC: Total gate charge affecting switching speed and driver power requirement |
| trr | 45 ns: Body diode reverse recovery time critical for synchronous rectification timing |
Pinout & Package
IRFR5505CPBF uses the DPAK (TO-252) surface-mount package with standard three-terminal configuration: Drain (pins 1 & 2), Source (pin 3), and Gate (pin 4). Thermal pad on underside connects to Drain internally.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (pins 1 & 2) | Main current-carrying terminal | Connected to high-side rail; carries full load current and dissipates heat via PCB copper |
| Source (pin 3) | Reference node for gate drive | Serves as return path for load current and reference for VGS measurement |
| Gate (pin 4) | Control input | Receives negative voltage relative to source to turn on; requires <1 µA leakage current |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with −10 V drive | 0.075 Ω enables <1.5 W conduction loss at 18 A, reducing heatsink requirements |
| Fast body diode recovery | 45 ns trr allows use in synchronous buck topologies without external Schottky diode |
| Robust UIS rating | 190 mJ single-pulse energy handling supports inductive load switching without snubbers |
| JEDEC-qualified reliability | Passes 1000-hour HTOL at 125 °C, supporting industrial and automotive under-hood applications |
Applications
| DC-DC Converter High-Side Switch | Brushed DC Motor H-Bridge |
|---|---|
Use Scenario: 12 V–48 V input synchronous buck converter delivering regulated 3.3 V/5 V to microcontrollers. IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling power delivery during PWM on-time; gate driven by bootstrap-free logic-level signal. Use Value: Low RDS(on) reduces conduction loss by >30% vs. comparable 0.12 Ω devices, improving efficiency at 10–15 A loads. | Use Scenario: Bidirectional 24 V brushed motor control in industrial actuators with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switch in H-bridge topology; body diode conducts reverse current during PWM off-time regeneration. Use Value: 45 ns trr minimizes shoot-through risk and diode conduction loss during commutation, extending MOSFET lifetime. |
| LED Constant-Current Driver | Power Supply OR-ing Circuit |
Use Scenario: High-brightness LED string driver with analog dimming in architectural lighting systems. IC Role / Device Role / Timing Role: Series pass element regulating current through feedback-controlled gate voltage. Use Value: Tight VGS(th) distribution (−2.0 to −4.0 V) ensures consistent turn-on across production batches, improving current matching. | Use Scenario: Dual-input 24 V DC power supply with automatic source selection in telecom equipment. IC Role / Device Role / Timing Role: Reverse-polarity protection and ideal diode replacement in OR-ing configuration. Use Value: 0.075 Ω RDS(on) cuts forward voltage drop to <1.4 V at 18 A, eliminating 25 W of heat per diode versus Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR7843PbF | RDS(on) = 0.013 Ω @ −10 V; VDSS = −30 V; smaller DPAK-3 footprint | Limited to ≤30 V systems; higher current density increases thermal sensitivity | Select when operating voltage ≤30 V and board space is constrained |
| STP16PF55 | RDS(on) = 0.085 Ω @ −10 V; TO-220 package; RθJA = 65 °C/W | Through-hole mounting only; higher thermal resistance requires larger heatsink | Choose for prototyping or low-volume assemblies where manual soldering is preferred |
Compared with IRFR5505CPBF, IRFR7843PbF offers lower on-resistance but reduced voltage margin, while STP16PF55 trades surface-mount convenience for easier thermal management in non-automated builds.
Availability
IRFR5505CPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and LED drivers requiring stable component supply across industrial automation, transportation electronics, and embedded power systems.
Supply support for IRFR5505CPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.
The OptiMOS™ P-channel product line targets high-efficiency power conversion in compact form factors, emphasizing low RDS(on), fast switching, and ruggedness in harsh environments.
FAQ
What is the maximum safe operating junction temperature for IRFR5505CPBF?
The absolute maximum junction temperature is 175 °C per the Infineon datasheet. Derating begins at 25 °C ambient, with continuous operation limited to 150 °C junction under typical PCB layout conditions (1 in² 2-oz copper, 1-layer). Thermal shutdown is not integrated; external monitoring is required for safety-critical designs.
Can IRFR5505CPBF be driven directly from a 3.3 V microcontroller GPIO?
No. Its VGS(th) range (−2.0 to −4.0 V) requires gate drive ≥−4.5 V for reliable enhancement. A 3.3 V GPIO cannot provide sufficient negative bias relative to source. A level-shifting circuit or dedicated gate driver IC with negative output capability is mandatory for full turn-on.
Does IRFR5505CPBF have integrated ESD protection on the gate?
Yes. It includes Class 1B HBM ESD protection (≥2 kV) per JESD22-A114, verified during qualification. However, gate oxide remains sensitive to static discharge during handling-use grounded wrist straps and conductive foam during assembly, and avoid floating gate traces longer than 5 mm in final layout.
How does the DPAK package affect thermal performance compared to TO-220?
The DPAK's exposed drain pad provides lower RθJC (1.5 °C/W vs. TO-220's 2.5 °C/W), but its RθJA is higher (60 °C/W vs. ~50 °C/W) due to limited PCB copper area. Optimal cooling requires ≥1 in² of 2-oz copper connected to the drain pad via ≥6 thermal vias, whereas TO-220 allows bolt-on heatsinks for higher-power scenarios.
IRFR5505CPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR5505CPBF FAQ
1.How can I place an order for IRFR5505CPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR5505CPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR5505CPBF reliable?
The price and inventory of IRFR5505CPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5505CPBF is usually 5 days.
3.What payment methods are accepted for IRFR5505CPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5505CPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR5505CPBF?
IRFR5505CPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR5505CPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR5505CPBF?
For technical support, including IRFR5505CPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5505CPBF requirements.
6.How does Aetrix verify that IRFR5505CPBF is sourced from the original manufacturer or authorized distributors?
All IRFR5505CPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5505CPBF meets industry standards.
7.What is the process for return or replacement of IRFR5505CPBF?
All IRFR5505CPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5505CPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR5505CPBF part is unused and in its original packaging.
Return procedure for IRFR5505CPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR5505CPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
