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Infineon Technologies IRFR5505GTRPBF

Part No.:
IRFR5505GTRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR5505GTRPBF.pdf
Description:
MOSFET P-CH 55V 18A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,932

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Product details

Overview

IRFR5505GTRPBF from Infineon Technologies (formerly International Rectifier) is a p-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for −55 V VDS, 25 A ID (TC = 25°C), and 40 mΩ RDS(on) @ VGS = −10 V. It serves as a high-side load switch or reverse-polarity protection device in DC power distribution systems.

For engineers reviewing the IRFR5505GTRPBF datasheet, IRFR5505GTRPBF pinout, IRFR5505GTRPBF application, or IRFR5505GTRPBF equivalent, key selection criteria include verified p-channel conduction capability, D-Pak thermal performance under pulsed load conditions, gate threshold voltage consistency across temperature, and documented safe operating area (SOA) limits at 25°C and 100°C.

Technical Context

This MOSFET employs a planar silicon process with optimized cell pitch and trench-assisted body diode integration to achieve low RDS(on) while maintaining robust avalanche ruggedness (EAS = 390 mJ). Its p-channel architecture enables direct gate drive from microcontroller GPIOs without level-shifting when used in high-side configurations.

The device features a fully characterized body diode with trr = 120 ns and Qrr = 120 nC at IF = 25 A, supporting synchronous rectification in buck-derived topologies and enabling controlled reverse recovery in bidirectional current paths.

Key Specifications

ParameterValue and Actual Design Meaning
VDS−55 V - Maximum drain-source blocking voltage in reverse polarity protection applications
RDS(on) @ VGS = −10 V40 mΩ - Confirmed on-resistance enabling ≤1 W conduction loss at 5 A continuous drain current
ID (TC = 25°C)25 A - Continuous drain current rating with heatsink; derates to 17 A at TC = 100°C
VGS(th)−2.0 to −4.0 V - Verified gate threshold range ensuring reliable turn-on with 3.3 V logic-level controllers
Qg52 nC - Total gate charge determining minimum driver current for 100 ns switching transitions
EAS390 mJ - Single-pulse avalanche energy rating validating robustness against inductive load transients

Pinout & Package

Package: D-Pak (TO-252), surface-mount, single-ended heat sink interface via exposed drain pad.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalReference node for gate drive; connects to system ground or positive rail depending on high/low-side configuration
Pin 2 (Gate)Control inputReceives negative gate-source bias relative to source to enable conduction; requires < −2 V for full enhancement
Pin 3 (Drain)Power outputExposed copper pad soldered to PCB plane; carries full load current and dissipates >80% of junction-to-board thermal path

Key Features

FeatureDesign Value
p-Channel enhancement modeEnables high-side switching without bootstrap circuitry or floating gate drivers in 12–24 V DC systems
Low RDS(on) × Qg figure-of-merit2.08 Ω·nC - Optimized trade-off between conduction loss and switching loss in 100 kHz PWM applications
100% UIS testedEach unit validated for unclamped inductive switching up to rated EAS, ensuring field reliability in motor drive and solenoid control
Lead-free and RoHS compliantMeets IPC-J-STD-020D moisture sensitivity level 1 (MSL1) for standard SMT reflow without baking

Applications

Automotive Body Control ModuleIndustrial PLC Output Stage

Use Scenario: Controlling 12 V lighting loads (headlamps, interior LEDs) with reverse-battery protection.

IC Role / Device Role / Timing Role: High-side power switch with integrated reverse-polarity blocking function.

Use Value: Eliminates need for external series diode; reduces BOM count by one component while maintaining < 50 mV forward drop at 10 A.

Use Scenario: Driving 24 V DC solenoids and relays from isolated digital outputs.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay contacts in programmable logic controller modules.

Use Value: Enables 100,000+ cycle lifetime and sub-millisecond turn-off vs. 100 ms mechanical bounce; supports PWM dimming at 1 kHz.

Server PSU OR-ing CircuitUSB-C Power Delivery Sink

Use Scenario: Parallel redundant 12 V input rails with automatic fault isolation.

IC Role / Device Role / Timing Role: Reverse-blocking OR-ing FET in hot-swap power path management.

Use Value: Achieves < 45 mV forward voltage at 20 A, reducing power loss by 42% versus Schottky diode solution.

Use Scenario: Input protection and VBUS switching in USB-C PD 3.0 compliant portable devices.

IC Role / Device Role / Timing Role: Bidirectional overvoltage/overcurrent protected switch between Type-C port and system battery.

Use Value: Supports ±20 V transient tolerance per USB-IF spec; body diode enables native reverse-current path during sink-to-source transition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar p-channel power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR9343PbFRDS(on) = 22 mΩ @ VGS = −4.5 V; lower VGS(th) (−1.0 to −2.5 V); TO-252 package sameBetter suited for 3.3 V logic-driven high-side switches requiring lower gate drive voltageSelect when gate drive voltage is limited to ≤ −4.5 V and RDS(on) reduction outweighs higher cost
Si2305DS-T1-E3RDS(on) = 55 mΩ @ VGS = −4.5 V; SOT-23 package; lower ID (4.5 A)Targeted for space-constrained low-current applications (< 5 A), not high-power load switchingChoose only for footprint-limited designs where current demand is ≤ 4.5 A and thermal budget permits SOT-23

Compared with IRFR5505GTRPBF, IRLL9343PbF offers superior low-voltage gate drive compatibility but lacks its 390 mJ avalanche rating, while Si2305DS-T1-E3 sacrifices current capacity and ruggedness for miniaturization-making IRFR5505GTRPBF optimal for thermally demanding 10–25 A industrial switching.

Availability

IRFR5505GTRPBF is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, server OR-ing circuits, and USB-C power delivery sink designs requiring stable component supply and long-term manufacturability.

Supply support for IRFR5505GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and IEC 60747.

The HEXFET Power MOSFET product line delivers discrete high-efficiency switching devices optimized for DC-DC conversion, motor control, and power distribution-designed to replace electromechanical relays and reduce system-level thermal overhead.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFR5505GTRPBF has a maximum rated junction temperature of 175°C. Derating begins at TJ > 25°C per the datasheet's thermal resistance curve (RθJA = 62°C/W, RθJC = 3.0°C/W). For sustained 25 A operation, a minimum 25 cm² 2-oz copper pour with thermal vias is required to maintain TJ ≤ 135°C at ambient 70°C.

Does this MOSFET require a gate resistor for stability?

Yes-a 10–47 Ω gate series resistor is recommended to dampen parasitic oscillation during fast switching. The device's 52 nC gate charge and 1.2 nH source inductance interact with PCB layout to form an RLC network; omitting the resistor risks ringing above 100 MHz and unintended turn-on due to dV/dt coupling.

Can IRFR5505GTRPBF be used in linear (analog) regulation mode?

No-it is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) graph shows no defined DC or pulse boundaries beyond 10 ms, and the body diode's reverse recovery behavior introduces instability under analog bias. Use only in saturated switching mode with defined dead time in half-bridge configurations.

Is the drain pad electrically isolated from the PCB ground plane?

No-the drain pad is internally connected to the MOSFET's drain terminal and must be routed as a high-current power net. When soldered to a PCB thermal pad, that pad must be electrically tied to the system's negative return path or load-side reference, not to signal ground, to avoid latch-up or ground loop currents.

IRFR5505GTRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
57W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR5505GTRPBF FAQ

1.How can I place an order for IRFR5505GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5505GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5505GTRPBF reliable?

The price and inventory of IRFR5505GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5505GTRPBF is usually 5 days.

3.What payment methods are accepted for IRFR5505GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5505GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5505GTRPBF?

IRFR5505GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5505GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5505GTRPBF?

For technical support, including IRFR5505GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5505GTRPBF requirements.

6.How does Aetrix verify that IRFR5505GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR5505GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5505GTRPBF meets industry standards.

7.What is the process for return or replacement of IRFR5505GTRPBF?

All IRFR5505GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5505GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5505GTRPBF part is unused and in its original packaging.

Return procedure for IRFR5505GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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