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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR5505PBF

Name: IRFR5505PBF
Brand: Infineon Technologies
SKU: IRFR5505PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR5505PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR5505PBF.pdf

Description:: MOSFET P-CH 55V 18A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR5505PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in DPAK package, rated for -55 V V_DSS, -14 A I_D (T_C = 25°C), R_DS(on) ≤ 0.052 Ω at V_GS = -10 V, and featuring integrated body diode with t_rr = 120 ns. It is used in DC-DC converter synchronous rectification and load switching in industrial power supplies.

For engineers reviewing the IRFR5505PBF datasheet, IRFR5505PBF pinout, IRFR5505PBF application, or IRFR5505PBF equivalent, key selection criteria include verified R_DS(on) at -10 V, body diode reverse recovery time under 150 ns, SOA compliance at 25°C and 100°C, and DPAK thermal resistance (R_θJC = 2.5°C/W).

Technical Context

This MOSFET operates in enhancement mode with threshold voltage V_GS(th) = -2.0 to -4.0 V and exhibits specified safe operating area up to 100°C case temperature. Its gate charge Q_g = 27 nC and input capacitance C_iss = 1200 pF support efficient switching in 100–500 kHz hard-switched topologies.

The device integrates a fast-recovery body diode with forward voltage V_SD = -1.7 V at I_S = -14 A and reverse recovery charge Q_rr = 95 nC, enabling use in freewheeling paths without external diode supplementation in non-isolated buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-55 V - Maximum drain-source blocking voltage in off-state; defines usable bus voltage headroom in negative-rail applications.
I_D (T_C = 25°C)	-14 A - Continuous drain current rating at heatsink-mounted case temperature; sets maximum steady-state conduction capability.
R_DS(on)	≤ 0.052 Ω @ V_GS = -10 V - On-resistance directly determines I²R conduction loss in high-current low-side switches.
t_rr	120 ns - Body diode reverse recovery time; critical for minimizing switching loss and EMI in synchronous rectifiers.
Q_g	27 nC - Total gate charge; determines required driver peak current and influences turn-on/turn-off timing control.
R_θJC	2.5°C/W - Junction-to-case thermal resistance; enables thermal design of heatsink interface for 10 W+ continuous dissipation.

Pinout & Package

IRFR5505PBF is housed in a surface-mount DPAK (TO-252AA) package with standard three-terminal configuration: Gate, Drain, Source. The drain is internally connected to the exposed metal pad for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≥\|4 V\| to ensure full enhancement.
Drain (D)	High-side current entry point	Connected to negative rail or load return path; electrically tied to thermal pad for heat transfer.
Source (S)	Reference node / current exit	Serves as circuit common for gate drive reference and current return; defines V_GS measurement point.

Key Features

Feature	Design Value
Lead-free and halogen-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; eliminates hazardous substances in assembly and end-of-life handling.
Fast body diode recovery	t_rr = 120 ns and Q_rr = 95 nC enable clean commutation in synchronous buck output stages without snubbers.
Low gate charge	Q_g = 27 nC reduces driver power loss and allows use with low-current gate drivers in space-constrained designs.
Enhanced SOA at elevated temperature	Rated for 100°C T_C operation with defined linear region limits; supports reliable operation in sealed enclosures.

Applications

Industrial DC-DC Converters

Automotive Body Control Modules

Use Scenario: 12 V input to 3.3 V/5 V point-of-load conversion in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in non-isolated buck regulator; replaces Schottky diode to reduce conduction loss.

Use Value: Achieves >92% efficiency at 8 A load due to R_DS(on) ≤ 0.052 Ω and eliminates forward voltage drop penalty of discrete diodes.

Use Scenario: Power distribution to door lock actuators and interior lighting in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: High-side load switch controlled by microcontroller GPIO with active-low logic interface.

Use Value: Enables precise current limiting via external sense resistor and supports diagnostic reporting through V_DS monitoring during fault conditions.

Telecom Power Supplies

Motor Drive Half-Bridge Legs

Use Scenario: Secondary-side rectification in 48 V telecom rectifier modules delivering 12 V/20 A output.

IC Role / Device Role / Timing Role: Synchronous rectifier paired with N-channel high-side switch in isolated forward converter topology.

Use Value: Reduces thermal stress on secondary winding and improves power density by lowering conduction loss by 40% vs. 40 V Schottky.

Use Scenario: Low-side switch in brushed DC motor H-bridge driving 24 V, 5 A fans in HVAC systems.

IC Role / Device Role / Timing Role: PWM-controlled current path with integrated body diode providing freewheeling during off-time.

Use Value: Eliminates need for external flyback diode; t_rr = 120 ns prevents shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7843PbF	V_DSS = -40 V, R_DS(on) = 0.022 Ω @ -10 V, Q_g = 22 nC	Lower voltage rating; better suited for 24 V systems with tighter R_DS(on) tolerance	Select when bus voltage ≤ 32 V and lower conduction loss is prioritized over 55 V margin.
STP16PF55	V_DSS = -55 V, R_DS(on) = 0.065 Ω @ -10 V, t_rr = 180 ns	Higher R_DS(on) and slower body diode; higher conduction and switching loss	Acceptable where cost sensitivity outweighs efficiency targets and layout allows larger heatsink.

Compared with IRFR5505PBF, IRLL7843PbF offers lower on-resistance but reduced voltage margin, while STP16PF55 trades higher conduction loss and longer reverse recovery for broader availability and legacy design continuity.

Availability

IRFR5505PBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and telecom power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRFR5505PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The StrongIRFET™ product line, which includes IRFR5505PBF, is engineered for high-efficiency power switching in industrial and automotive applications where ruggedness, thermal stability, and fast body diode recovery are essential.

FAQ

What is the maximum allowable gate-source voltage for IRFR5505PBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±12 V risks permanent gate oxide damage. For reliable enhancement, V_GS must be ≤ –4.0 V (typical threshold upper limit); –10 V is recommended to ensure full channel saturation and minimize R_DS(on) variation across temperature and unit spread.

Does IRFR5505PBF require a gate resistor in typical switching applications?

Yes - a series gate resistor (typically 5–22 Ω) is required to dampen ringing caused by gate-drain capacitance (Miller effect) and control dV/dt during switching transitions. Without it, parasitic oscillation can cause false turn-on, increased EMI, and localized heating at the gate terminal.

Can IRFR5505PBF be used in parallel configurations?

Yes, but only with matched devices and individual source resistors (0.05–0.1 Ω) to balance current sharing. Thermal coupling between paralleled units must be uniform, and gate drive signals must be identical in rise/fall time and propagation delay to avoid dynamic imbalance during switching transients.

Is the exposed drain pad on the DPAK package electrically connected to the drain terminal?

Yes - the copper pad on the underside of the DPAK package is internally bonded to the drain metallization. It must be soldered to a PCB copper pour tied to the drain net for both thermal performance and electrical integrity; floating or grounded pads will compromise SOA and cause premature failure under surge conditions.

IRFR5505PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR5505PBF FAQ

1.How can I place an order for IRFR5505PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5505PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5505PBF reliable?

The price and inventory of IRFR5505PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5505PBF is usually 5 days.

3.What payment methods are accepted for IRFR5505PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5505PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5505PBF?

IRFR5505PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5505PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5505PBF?

For technical support, including IRFR5505PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5505PBF requirements.

6.How does Aetrix verify that IRFR5505PBF is sourced from the original manufacturer or authorized distributors?

All IRFR5505PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5505PBF meets industry standards.

7.What is the process for return or replacement of IRFR5505PBF?

All IRFR5505PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5505PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5505PBF part is unused and in its original packaging.

Return procedure for IRFR5505PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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