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Infineon Technologies IRFR5505TRL
- Part No.:
- IRFR5505TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR5505TRL.pdf
- Description:
- MOSFET P-CH 55V 18A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,569
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Product details
Overview
IRFR5505TRL from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -55 V VDS, 0.11 Ω RDS(on) at VGS = -10 V, and -18 A continuous drain current at TC = 25°C. It features fully avalanche-rated ruggedness, fast switching (tr = 28 ns), and low gate charge (Qg = 32 nC), enabling use in high-efficiency DC-DC converters and load-switching circuits.
For engineers reviewing the IRFR5505TRL datasheet, IRFR5505TRL pinout, IRFR5505TRL application, or IRFR5505TRL equivalent, key selection criteria include verified P-channel logic-level compatibility, junction-to-case thermal resistance of 2.2°C/W, body diode reverse recovery time (trr = 51–77 ns), and SOA-limited operation up to -28 V and -9.6 A in pulse conditions.
Technical Context
This device employs fifth-generation HEXFET processing to achieve ultra-low on-resistance per die area while maintaining robust avalanche energy handling (EAS = 150 mJ). Its P-channel topology enables high-side switching without level-shifting circuitry in low-voltage systems.
The D-Pak package supports PCB-mount vapor-phase and infrared reflow, with thermal performance validated under 1"² FR-4 board conditions (RθJA = 50°C/W). Internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) are characterized to support accurate switching loss modeling in synchronous buck or OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -55 V - Maximum blocking voltage in high-side switch configurations |
| RDS(on) | 0.11 Ω @ VGS = -10 V - Enables <1.1 W conduction loss at -10 A continuous load |
| ID (continuous) | -18 A @ TC = 25°C - Supports high-current load switching on thermally enhanced PCBs |
| Qg | 32 nC - Determines gate drive power requirement and switching speed in PWM control |
| tr/tf | 28 ns / 16 ns - Limits switching transition losses in 100–500 kHz power stages |
| EAS | 150 mJ - Confirmed single-pulse avalanche capability for inductive load turn-off protection |
| trr | 51–77 ns - Critical for minimizing body-diode conduction loss in synchronous rectification |
Pinout & Package
IRFR5505TRL uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (common with Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives negative VGS to turn on; threshold range -2.0 to -4.0 V ensures compatibility with 3.3 V/5 V logic drivers |
| 2 & 4 (Drain) | Main current path (high-side) | Internally connected to exposed copper pad; must be routed to high-voltage node and thermally coupled to PCB copper pour |
| 3 (Source) | Reference terminal | Connects to system ground or load return; defines VGS reference and carries full load current |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.11 Ω reduces I²R losses by >30% vs. comparable -55 V P-channel MOSFETs in 12 V bus applications |
| Fully avalanche rated | 150 mJ EAS eliminates need for external snubbers in inductive load switching (e.g., solenoid drivers) |
| Fast body diode | trr = 51–77 ns and Qrr = 110–160 nC minimize cross-conduction loss in synchronous buck topologies |
| Surface-mount D-Pak | TO-252AA footprint enables automated assembly and 57 W power dissipation with proper PCB copper area |
Applications
| Power Supply Load Switch | Industrial Motor Control |
|---|---|
Use Scenario: Hot-swap insertion of 12 V peripheral modules in programmable logic controllers. IC Role / Device Role: High-side P-channel load switch controlling power delivery to downstream circuitry. Use Value: Low RDS(on) limits inrush voltage drop; avalanche rating withstands back-EMF during sudden disconnect. | Use Scenario: Directional braking in 24 V brushed DC motors using H-bridge half-bridge configuration. IC Role / Device Role: Upper-leg P-channel switch enabling regenerative braking via body diode conduction. Use Value: Fast trr and low Qrr reduce heat generation during frequent PWM commutation cycles. |
| Automotive Body Control | Telecom DC-DC Converter |
Use Scenario: Controlled power sequencing for LED headlight modules in 12 V automotive systems. IC Role / Device Role: Inrush-limited high-side switch with integrated overtemperature protection. Use Value: RθJC = 2.2°C/W allows direct thermal coupling to chassis; -55°C to +150°C TJ range meets AEC-Q101 stress requirements. | Use Scenario: Synchronous rectification stage in isolated 48 V to 12 V telecom power supply. IC Role / Device Role: Secondary-side P-channel MOSFET replacing Schottky diode in forward converter output stage. Use Value: 0.11 Ω RDS(on) cuts conduction loss by ~65% vs. 40 V Schottky, improving efficiency at 20 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR9343PbF | RDS(on) = 0.027 Ω @ VGS = -4.5 V; lower voltage rating (-30 V); smaller D-Pak variant | Better suited for 3.3 V logic-driven 5–12 V systems; insufficient for 24 V+ bus isolation | Select when gate drive is limited to ≤ -4.5 V and VDS stress remains < -25 V |
| DMG6968UVT-7 | RDS(on) = 0.035 Ω @ VGS = -4.5 V; -30 V rating; 1.2 mm height TSOP-6 package | Space-constrained designs requiring ultra-low profile; lacks avalanche rating and thermal mass for >5 A continuous loads | Choose for compact consumer electronics where board space outweighs ruggedness requirements |
Compared with IRFR5505TRL, IRFL9343PbF offers significantly lower on-resistance at logic-level drive but sacrifices voltage margin and avalanche robustness, while DMG6968UVT-7 prioritizes miniaturization over thermal handling and transient survivability-making IRFR5505TRL optimal for industrial 24–48 V systems demanding reliability under load dump or inductive kick.
Availability
IRFR5505TRL is available at Aetrix Electronics and suitable for power supply load switching, industrial motor control, automotive body electronics, and telecom DC-DC converter designs requiring stable component supply across extended production lifecycles.
Supply support for IRFR5505TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.
The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in industrial, automotive, and computing applications-emphasizing ruggedness, low conduction loss, and fast switching in surface-mount packages.
FAQ
What is the maximum safe operating voltage for IRFR5505TRL in continuous DC operation?
The absolute maximum VDS is -55 V, but continuous operation should remain below -44 V to maintain margin against transients and temperature-induced drift. Derating is required above TJ = 25°C; at 100°C junction temperature, the recommended max VDS drops to -38 V per SOA curve limitations in Figure 8.
Can IRFR5505TRL be driven directly by a 3.3 V microcontroller GPIO?
No-its gate threshold voltage range is -2.0 V to -4.0 V, and RDS(on) is specified only at VGS = -10 V. At -3.3 V, the device operates in weak inversion with RDS(on) > 1.2 Ω, causing excessive heating. A dedicated gate driver or level shifter is required for reliable switching.
How does the body diode performance impact synchronous rectifier design?
The body diode has VSD = -1.6 V at -9.6 A and trr = 51–77 ns, resulting in measurable conduction and recovery losses. In synchronous rectification, this necessitates precise timing control to avoid shoot-through, and the Qrr = 110–160 nC contributes directly to switching loss during dead-time transitions.
Is IRFR5505TRL RoHS-compliant and halogen-free?
Yes-IRFR5505TRL is manufactured per RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The "PbF" suffix in alternate part numbers (e.g., IRFR5505PbF) explicitly denotes lead-free finish; the TRL tape-and-reel variant complies with the same environmental specifications.
IRFR5505TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR5505TRL FAQ
1.How can I place an order for IRFR5505TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR5505TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR5505TRL reliable?
The price and inventory of IRFR5505TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5505TRL is usually 5 days.
3.What payment methods are accepted for IRFR5505TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5505TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR5505TRL?
IRFR5505TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR5505TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR5505TRL?
For technical support, including IRFR5505TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5505TRL requirements.
6.How does Aetrix verify that IRFR5505TRL is sourced from the original manufacturer or authorized distributors?
All IRFR5505TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5505TRL meets industry standards.
7.What is the process for return or replacement of IRFR5505TRL?
All IRFR5505TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5505TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR5505TRL part is unused and in its original packaging.
Return procedure for IRFR5505TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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