My Inquiry
My Account
Infineon Technologies IRFR5505TRLPBF
- Part No.:
- IRFR5505TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR5505TRLPBF.pdf
- Description:
- MOSFET P-CH 55V 18A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,308
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR5505TRLPBF from Infineon Technologies (formerly International Rectifier) is a 55V, -32A, 0.048Ω P-channel MOSFET in DPAK package, optimized for high-current DC-DC conversion and load switching in industrial power supplies and motor control circuits.
For engineers reviewing the IRFR5505TRLPBF datasheet, IRFR5505TRLPBF pinout, IRFR5505TRLPBF application, or IRFR5505TRLPBF equivalent, key selection criteria include RDS(on) at VGS = -10V, body diode reverse recovery characteristics, SOA limits under repetitive avalanche, and gate charge for synchronous rectification timing.
Technical Context
This logic-level P-channel MOSFET features a robust trench-gate structure enabling low on-resistance with fast switching transitions. Its integrated body diode supports bidirectional current flow in H-bridge configurations and exhibits controlled reverse recovery (trr = 170 ns typical) to minimize voltage overshoot during commutation.
The device operates with gate threshold voltage VGS(th) between -2.0V and -4.0V, ensuring full enhancement at standard 5V logic drive levels. It is rated for continuous drain current of -32A at TC = 25°C and supports pulsed drain current up to -120A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -55V - Maximum blocking voltage in off-state; suitable for 48V bus systems with margin |
| RDS(on) @ VGS = -10V | 0.048Ω - Enables <1.5W conduction loss at 5.5A continuous load |
| ID (continuous) | -32A @ TC = 25°C - Requires heatsinking above 75°C case temperature |
| Qg | 42 nC - Determines gate driver power requirement and switching speed trade-off |
| tr/tf | 20/35 ns - Supports >500 kHz switching in hard-switched topologies |
| EAS | 390 mJ - Specifies single-pulse avalanche energy handling capability |
Pinout & Package
DPAK (TO-252AA) surface-mount package with exposed drain pad for thermal performance; 3-pin configuration: Gate (Pin 1), Drain (Pin 2, tab), Source (Pin 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Accepts logic-level negative voltage to turn on; requires <1.5V gate drive swing for full enhancement |
| Drain (D) | High-side current path | Connected to input rail; tab serves as primary heat sink interface and electrical connection |
| Source (S) | Reference node | Bias reference for gate drive; tied to load return or controller ground in high-side switch layout |
Key Features
| Feature | Design Value |
|---|---|
| Lead-free and halogen-free construction | Meets RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| Logic-level gate drive compatibility | Full enhancement achieved with -5V gate-source voltage; eliminates need for level-shifting circuitry |
| Enhanced avalanche ruggedness | Rated for repetitive unclamped inductive switching (UIS) up to 390 mJ per pulse |
| Low gate charge | 42 nC total gate charge enables efficient driving with low-power microcontroller GPIOs |
Applications
| Industrial DC-DC Converters | Motor Drive Half-Bridge |
|---|---|
Use Scenario: Synchronous rectification in isolated 48V-to-12V buck converters for programmable logic controllers. IC Role / Device Role / Timing Role: High-side P-channel switch replacing Schottky diode to reduce conduction losses by >40%. Use Value: Achieves >94% efficiency at 10A output with 500 kHz switching frequency. | Use Scenario: Upper-leg switch in 24V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role / Timing Role: Load switching element with integrated body diode providing freewheeling path during PWM off-time. Use Value: Eliminates external flyback diode; trr = 170 ns prevents shoot-through during dead-time transitions. |
| Hot-Swap Controllers | Load Switches for Embedded Systems |
Use Scenario: Inrush current limiting and fault isolation in redundant 24V power distribution units. IC Role / Device Role / Timing Role: Controlled turn-on switch with dV/dt limiting via gate resistor to prevent supply rail collapse. Use Value: Supports soft-start ramp time of 2–5 ms using RC gate network without external IC. | Use Scenario: Power sequencing for FPGA I/O banks and memory subsystems in edge computing modules. IC Role / Device Role / Timing Role: Low-RDS(on) load switch enabling <5mV drop at 3A load current. Use Value: Maintains voltage regulation within ±1% tolerance across full operating temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR7843PbF | RDS(on) = 0.022Ω @ VGS = -10V; higher Qg = 62 nC | Better conduction loss but slower switching; suited for lower-frequency (<200 kHz) high-current loads | Select when thermal budget dominates over switching loss and gate drive capability permits higher Qg |
| SiHFP048P | RDS(on) = 0.045Ω @ VGS = -10V; tr/tf = 15/25 ns; lower EAS = 280 mJ | Faster switching with reduced avalanche margin; optimized for compact SMPS designs | Prefer where board space and switching frequency outweigh need for high-energy transient immunity |
Compared with IRFR5505TRLPBF, IRLL7843PbF trades faster switching for lower conduction loss and higher gate drive demand, while SiHFP048P offers tighter timing control at reduced avalanche robustness-selection depends on whether thermal, dynamic, or transient design constraints dominate.
Availability
IRFR5505TRLPBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor drive half-bridges, and hot-swap controllers requiring stable component supply and long-term production continuity.
Supply support for IRFR5505TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions.
The StrongIRFET™ product line, which includes IRFR5505TRLPBF, is engineered for high-reliability power switching in harsh environments with emphasis on ruggedness, low RDS(on), and ease of gate drive integration.
FAQ
What is the maximum junction temperature rating for IRFR5505TRLPBF?
The absolute maximum junction temperature is 175°C. Derating begins at TJ > 125°C, and thermal design must ensure steady-state TJ remains ≤150°C under worst-case ambient and power dissipation conditions. The DPAK package's θJA is 62°C/W on 1-in² 2-oz copper, requiring careful PCB layout for thermal management.
Does IRFR5505TRLPBF support gate drive from a 3.3V microcontroller?
No. With VGS(th) ranging from -2.0V to -4.0V and RDS(on) specified only at -10V, reliable enhancement requires ≥-5V gate drive. A 3.3V MCU cannot provide sufficient negative bias; a dedicated gate driver or level shifter is mandatory for full on-state performance.
Can IRFR5505TRLPBF be used in parallel configurations?
Yes, but with strict layout symmetry and individual gate resistors (≥10Ω) to ensure current sharing. The device's positive temperature coefficient of RDS(on) aids thermal stability, yet mismatched parasitic inductance or resistance can cause imbalance above 15A per device. Thermal coupling between devices must be minimized.
Is the body diode suitable for continuous freewheeling in PWM motor control?
Yes-the body diode is rated for continuous forward current up to -32A at TC = 25°C and exhibits controlled reverse recovery (trr = 170 ns). However, its VSD = 1.3V at -32A increases conduction loss versus external Schottky diodes; use is appropriate where layout simplicity outweighs efficiency loss.
IRFR5505TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR5505TRLPBF FAQ
1.How can I place an order for IRFR5505TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR5505TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR5505TRLPBF reliable?
The price and inventory of IRFR5505TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5505TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR5505TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5505TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR5505TRLPBF?
IRFR5505TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR5505TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR5505TRLPBF?
For technical support, including IRFR5505TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5505TRLPBF requirements.
6.How does Aetrix verify that IRFR5505TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR5505TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5505TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR5505TRLPBF?
All IRFR5505TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5505TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR5505TRLPBF part is unused and in its original packaging.
Return procedure for IRFR5505TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR5505TRLPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
