Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFR5505TRR

Part No.:
IRFR5505TRR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR5505TRR.pdf
Description:
MOSFET P-CH 55V 18A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,759

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR5505TRR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -55 V VDS, 0.11 Ω RDS(on) at VGS = -10 V, and -18 A continuous drain current at TC = 25°C. It features fully avalanche-rated ruggedness, fast switching (tr = 28 ns), and low gate charge (Qg = 32 nC), enabling efficient high-side load switching in DC-DC converters and motor control circuits.

For engineers reviewing the IRFR5505TRR datasheet, IRFR5505TRR pinout, IRFR5505TRR application, or IRFR5505TRR equivalent, key selection criteria include verified P-channel logic-level compatibility, junction-to-case thermal resistance of 2.2°C/W, body diode reverse recovery time (trr = 51–77 ns), and SOA-limited operation under unclamped inductive switching conditions.

Technical Context

This MOSFET employs fifth-generation HEXFET process technology to achieve ultra-low on-resistance per die area while maintaining robust avalanche energy rating (EAS = 150 mJ). Its P-channel topology enables high-side switching without level-shifting circuitry in 12 V and 24 V industrial power rails.

The device integrates a co-packaged body diode with VSD = -1.6 V at IS = -9.6 A and exhibits controlled dv/dt capability (-5.0 V/ns peak diode recovery), supporting reliable commutation in synchronous rectification and H-bridge configurations where shoot-through prevention is critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-55 V - Maximum blocking voltage for high-side switch in 48 V nominal systems with 20% margin
RDS(on)0.11 Ω @ VGS = -10 V - Enables ≤1.0 W conduction loss at -9.6 A, suitable for thermally constrained PCB layouts
ID (continuous)-18 A @ TC = 25°C - Supports high-current loads such as solenoid drivers and BLDC phase switches
Qg32 nC - Low gate drive power requirement; compatible with standard 5 V microcontroller GPIOs via buffer
tr/tf28 ns / 16 ns - Fast edge rates reduce switching losses in PWM frequencies up to 500 kHz
EAS150 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external snubbers
RθJC2.2 °C/W - Enables direct heatsinking to copper pour or external metal slug for >40 W dissipation

Pinout & Package

IRFR5505TRR uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The package supports vapor-phase, infrared, and wave soldering per AN-994 guidelines.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives negative VGS to turn on; requires ≥-10 V for full RDS(on) specification
2 (Drain)High-side power outputInternally connected to exposed metal tab; must be routed to high-voltage rail and heatsink
3 (Source)Reference nodeConnects to system ground or load return; defines VGS reference for gate drive
4 (Drain)Redundant drain connectionParallel path to Pin 2; improves current sharing and thermal spreading across PCB copper

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.11 Ω reduces I²R losses by >35% vs. legacy P-channel MOSFETs at same current density
Fully avalanche rated150 mJ single-pulse EAS allows safe operation in unclamped inductive switching without derating
Fast body diodetrr = 51–77 ns and Qrr = 110–160 nC minimize cross-conduction losses in synchronous rectifiers
Surface-mount D-PakTO-252AA footprint enables automated assembly and 57 W power dissipation with proper PCB copper area
Logic-compatible gateVGS(th) = -2.0 to -4.0 V ensures turn-on with standard -5 V or -12 V control signals

Applications

Industrial Motor ControlAutomotive Body Electronics

Use Scenario: Driving brushed DC motors in HVAC actuators and seat positioners using half-bridge topology.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor voltage polarity and direction.

Use Value: Low RDS(on) minimizes heat generation in sealed enclosures; avalanche rating prevents failure during motor stall events.

Use Scenario: Load switching for LED headlamp modules and interior lighting with overvoltage protection.

IC Role / Device Role / Timing Role: High-side power switch enabling precise PWM dimming and short-circuit shutdown.

Use Value: Fast tr/tf supports 1–20 kHz dimming without audible noise; integrated body diode handles inductive kickback from LED drivers.

Telecom DC-DC ConvertersPower Tool Battery Management

Use Scenario: Synchronous rectification in isolated 48 V to 12 V buck converters for base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve efficiency.

Use Value: Low Qg and fast trr reduce gate drive loss and reverse recovery loss, increasing converter efficiency by 2–3% at full load.

Use Scenario: High-side main FET in 18–60 V cordless power tool battery packs with electronic fuse functionality.

IC Role / Device Role / Timing Role: Primary protection switch isolating battery cells during overcurrent or short-circuit faults.

Use Value: 2.2°C/W RθJC allows direct thermal coupling to metal housing, enabling sustained 15 A fault current interruption without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9540NPBFHigher RDS(on) (0.2 Ω), TO-220 package, slower switching (tr = 60 ns)Requires heatsink; unsuitable for high-frequency SMPS or space-constrained PCBsPreferred for cost-sensitive through-hole designs with ample thermal margin
DMG2305UVT-7Lower voltage rating (-20 V), smaller SOT-23 package, lower Qg (11 nC)Limited to 5–12 V logic-level systems; not rated for unclamped inductive switchingOptimal for portable electronics with tight gate drive power budgets and low-voltage rails

Compared with IRF9540NPBF and DMG2305UVT-7, IRFR5505TRR uniquely balances -55 V rating, 0.11 Ω on-resistance, surface-mount D-Pak thermal performance, and full avalanche ruggedness-making it the only option qualified for 24–48 V industrial motor drives requiring both efficiency and fault tolerance.

Availability

IRFR5505TRR is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, telecom DC-DC converters, and power tool battery management requiring stable component supply and long-term production continuity.

Supply support for IRFR5505TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability power conversion in industrial, automotive, and telecom infrastructure-emphasizing ruggedness, low conduction loss, and fast switching in surface-mount packages.

FAQ

What is the maximum safe operating temperature for IRFR5505TRR?

The IRFR5505TRR has a specified junction temperature range of -55°C to +150°C. Its maximum continuous case temperature is 150°C, validated by SOA curves in the datasheet. Derating begins above 25°C at 0.45 W/°C, and thermal design must maintain TJ ≤ 150°C under worst-case ambient and power dissipation conditions.

Can IRFR5505TRR be driven directly from a 3.3 V microcontroller GPIO?

No-IRFR5505TRR requires VGS ≤ -10 V for guaranteed RDS(on) = 0.11 Ω. At VGS = -3.3 V, RDS(on) exceeds 0.5 Ω, causing excessive conduction loss. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required for logic-level control.

Does IRFR5505TRR include an integrated ESD protection diode?

No-IRFR5505TRR does not integrate ESD protection. Its gate oxide is rated for ±20 V absolute maximum VGS, but real-world handling requires external TVS clamping or series resistance to prevent electrostatic damage during PCB assembly or field operation.

Is the body diode in IRFR5505TRR suitable for reverse polarity protection?

Yes-the intrinsic body diode conducts from source to drain (S→D) when VSD > 0, making it usable for reverse polarity protection in low-voltage DC inputs. However, its VSD = -1.6 V at -9.6 A introduces ~1.5 W forward loss, so it is best applied in low-current (<2 A) or intermittent-fault scenarios.

IRFR5505TRR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
57W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRFR5505TRR FAQ

1.How can I place an order for IRFR5505TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR5505TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR5505TRR reliable?

The price and inventory of IRFR5505TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR5505TRR is usually 5 days.

3.What payment methods are accepted for IRFR5505TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR5505TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR5505TRR?

IRFR5505TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR5505TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR5505TRR?

For technical support, including IRFR5505TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR5505TRR requirements.

6.How does Aetrix verify that IRFR5505TRR is sourced from the original manufacturer or authorized distributors?

All IRFR5505TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR5505TRR meets industry standards.

7.What is the process for return or replacement of IRFR5505TRR?

All IRFR5505TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR5505TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR5505TRR part is unused and in its original packaging.

Return procedure for IRFR5505TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR5505TRR Tags

  • IRFR5505TRR
  • IRFR5505TRR PDF
  • IRFR5505TRR Datasheet
  • IRFR5505TRR Specifications
  • IRFR5505TRR Images
  • Infineon Technologies
  • Infineon Technologies IRFR5505TRR
  • Buy IRFR5505TRR
  • IRFR5505TRR Price
  • IRFR5505TRR Distributor
  • IRFR5505TRR Supplier
  • IRFR5505TRR Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER