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Infineon Technologies IRFR6215CPBF
- Part No.:
- IRFR6215CPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR6215CPBF.pdf
- Description:
- MOSFET P-CH 150V 13A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,153
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Product details
Overview
IRFR6215CPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 15 A, n-channel enhancement-mode Power MOSFET in TO-252 (D-Pak) package, optimized for high-efficiency DC-DC conversion and motor control in industrial power supplies and battery-powered systems.
For engineers reviewing the IRFR6215CPBF datasheet, IRFR6215CPBF pinout, IRFR6215CPBF application, or IRFR6215CPBF equivalent, key selection criteria include RDS(on) ≤ 85 mΩ at VGS = 10 V, Qg = 24 nC, and SOA compliance up to TC = 100 °C with pulse width ≤ 10 ms.
Technical Context
This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized gate oxide and body diode recovery characteristics. It supports hard-switched operation with trr = 75 ns and Qrr = 32 nC at IF = 7.5 A, VR = 48 V, dI/dt = 100 A/μs.
The part features 100% avalanche-rated ruggedness (EAS = 110 mJ at TJ = 25 °C), specified for continuous drain current up to 15 A at TC = 100 °C, and gate threshold voltage VGS(th) = 2.0–4.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with 20 % margin. |
| RDS(on) @ VGS = 10 V | 85 mΩ max - Enables <1.3 W conduction loss at 4 A continuous drain current in PCB-mounted thermal design. |
| ID (continuous) | 15 A @ TC = 100 °C - Sustains full rated load without derating when mounted on ≥ 1 in² 2-oz copper with thermal via array. |
| Qg | 24 nC - Determines gate drive energy requirement; compatible with standard 1-A peak gate drivers at 100 kHz switching. |
| trr | 75 ns - Limits reverse recovery charge injection during synchronous rectification, reducing cross-conduction risk. |
| EAS | 110 mJ - Guarantees single-pulse avalanche survival under inductive turn-off stress without external snubber. |
Pinout & Package
TO-252 (D-Pak) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives voltage-controlled signal; requires 2.0–4.0 V threshold to initiate conduction; low input capacitance (Ciss = 920 pF) minimizes driver loading. |
| Drain (D) | High-side power node | Connected to exposed metal tab; serves as primary heat path to PCB; electrically tied to output rail in high-side switch configurations. |
| Source (S) | Reference node | Provides return path for load current; used as common reference for gate drive in low-side layouts; enables Kelvin sensing in precision current monitoring designs. |
Key Features
| Feature | Design Value |
|---|---|
| 100 % UIS tested | Ensures robustness against unclamped inductive switching events without pre-screening failure. |
| Fast body diode recovery | trr = 75 ns and Qrr = 32 nC enable use in synchronous buck converters without external Schottky parallel diodes. |
| Low gate charge | Qg = 24 nC reduces switching losses and allows use of cost-effective gate drivers in 50–200 kHz applications. |
| Enhanced SOA | Linear region rated for 15 A at VDS = 30 V, enabling reliable linear-mode operation in hot-swap and current-limit circuits. |
Applications
| Brushless DC Motor Driver | Industrial DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC inverters driving fans, pumps, and compressors. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off and low RDS(on) to minimize conduction loss and thermal rise. Use Value: 85 mΩ RDS(on) limits I²R loss to ≤0.5 W at 7.5 A RMS, enabling compact heatsink-free PCB layout. | Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V flyback or forward converter. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at light-to-moderate loads. Use Value: Body diode trr = 75 ns prevents shoot-through during gate transition, supporting >92 % efficiency at 50 % load. |
| Hot-Swap Controller | Battery Protection Circuit |
Use Scenario: Inrush limiting and fault isolation in 12–48 V backplane power distribution units. IC Role / Device Role / Timing Role: Linear-mode controlled pass element with guaranteed SOA up to 15 A × 30 V. Use Value: EAS = 110 mJ ensures survivability during repeated short-circuit events without latch-up or parametric shift. | Use Scenario: Charge/discharge FET in Li-ion battery packs with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch activated by protection IC to isolate cell stack during fault. Use Value: VGS(th) range (2.0–4.0 V) ensures clean turn-on with standard 3.3 V logic-level control signals from BMS ASICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar n-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR6215PbF | Same die, TO-220FP package; higher thermal resistance (RθJC = 2.5 °C/W vs. 1.7 °C/W). | Requires heatsink for >8 A continuous; unsuitable for space-constrained SMT-only boards. | Select when through-hole mounting and higher peak power handling are prioritized over board area. |
| STP60NF06L | 60 V, 60 A, RDS(on) = 12 mΩ; larger die, higher Qg = 65 nC. | Over-specified for 15 A use cases; increases gate drive complexity and cost without benefit. | Choose only if future-proofing for higher current or lower RDS(on) is required in same footprint. |
Compared with IRLR6215PbF and STP60NF06L, IRFR6215CPBF delivers optimal balance of thermal performance, gate drive simplicity, and SMT manufacturability for 15 A industrial power stages-without over-engineering or package compromise.
Availability
IRFR6215CPBF is available at Aetrix Electronics and suitable for industrial motor drives, battery management systems, and DC-DC power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRFR6215CPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in discrete power devices dating to International Rectifier's HEXFET innovation.
The IRFR6215CPBF belongs to the Generation 3 HEXFET Power MOSFET product line, engineered for high-reliability industrial power conversion where ruggedness, predictable SOA, and repeatable switching behavior are critical.
FAQ
What is the maximum junction temperature rating for IRFR6215CPBF?
The absolute maximum junction temperature is 175 °C. The device is characterized for continuous operation up to TJ = 150 °C, with thermal shutdown recommended above 160 °C in closed-loop systems. Derating begins at TC > 100 °C per the Safe Operating Area curve in the datasheet.
Does IRFR6215CPBF have a built-in ESD protection diode?
No, IRFR6215CPBF does not integrate gate-oxide ESD protection. It complies with HBM Class 1B (≥500 V), requiring external gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp) in automated handling or high-static environments.
Can IRFR6215CPBF be used in linear mode for constant-current regulation?
Yes-its enhanced SOA supports linear operation up to 15 A at VDS = 30 V with pulse widths ≤10 ms. For DC linear use, limit power dissipation to ≤2.5 W with active cooling and ensure gate drive remains within ±20 V to prevent oxide stress.
Is the drain tab electrically isolated in the TO-252 package?
No-the drain (Pin 2) is directly connected to the exposed metal tab. This tab must be electrically tied to the drain net on the PCB and thermally coupled to a copper pour; no insulation layer is required or recommended for thermal performance.
IRFR6215CPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 295mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR6215CPBF FAQ
1.How can I place an order for IRFR6215CPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR6215CPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR6215CPBF reliable?
The price and inventory of IRFR6215CPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR6215CPBF is usually 5 days.
3.What payment methods are accepted for IRFR6215CPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR6215CPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR6215CPBF?
IRFR6215CPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR6215CPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR6215CPBF?
For technical support, including IRFR6215CPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR6215CPBF requirements.
6.How does Aetrix verify that IRFR6215CPBF is sourced from the original manufacturer or authorized distributors?
All IRFR6215CPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR6215CPBF meets industry standards.
7.What is the process for return or replacement of IRFR6215CPBF?
All IRFR6215CPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR6215CPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR6215CPBF part is unused and in its original packaging.
Return procedure for IRFR6215CPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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