Infineon Technologies IRFR6215PBF

Overview

IRFR6215PBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) surface-mount package, rated for -150 V V(BR)DSS, 0.295 Ω RDS(on) at VGS = -10 V and ID = -6.6 A, with -13 A continuous drain current at TC = 25°C. It delivers fast switching (tr = 36 ns, tf = 37 ns), full avalanche rating (EAS = 310 mJ), and operates up to +175°C junction temperature - deployed in high-reliability DC-DC converter synchronous rectification and industrial motor control H-bridge low-side switches.

For engineers reviewing the IRFR6215PBF datasheet, IRFR6215PBF pinout, IRFR6215PBF application, or IRFR6215PBF equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility, -150 V blocking capability under repetitive avalanche stress, thermal performance on FR-4 PCBs (RθJA = 50 °C/W), and D-Pak footprint suitability for automated SMT assembly in power supply and motor driver designs.

Technical Context

This device employs Infineon's fifth-generation HEXFET process to achieve low RDS(on) per die area while maintaining rugged unclamped inductive switching robustness. Its body diode exhibits trr = 160–240 ns and Qrr = 1.2–1.7 µC at IF = -6.6 A, supporting efficient synchronous rectification in buck converters without external Schottky diodes.

The MOSFET features tightly controlled VGS(th) (-2.0 to -4.0 V), gfs = 3.6 S at VDS = -50 V, and gate charge parameters (Qg = 66 nC, Qgd = 35 nC) optimized for gate-drive loss minimization in 100–500 kHz switching applications. Thermal design is enabled by RθJC = 1.4 °C/W and validated SOA curves up to 10 ms pulse width at TJ = 175°C.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal conduction; standard footprint compatible with IPC-7351B DPAK-3 land pattern. Leads are gull-wing, coplanar, and RoHS-compliant (Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRFR6215PBF, IRFR6215TRLPBF offers identical performance in tape-and-reel form for volume SMT, while STP12PF06 trades -150 V ruggedness for lower conduction loss in sub-48 V applications - making IRFR6215PBF the sole choice for 100+ V DC systems requiring field-proven avalanche reliability.

Availability

IRFR6215PBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRFR6215PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion - engineered for demanding applications including motor control, server PSUs, and automotive subsystems where thermal robustness and avalanche tolerance are critical.

FAQ

Is IRFR6215PBF suitable for high-frequency switching above 1 MHz?

No. While its tr/tf values (36/37 ns) support operation up to ~500 kHz, total gate charge (Qg = 66 nC) and output capacitance (Coss = 220 pF) cause excessive switching losses above 1 MHz. For >1 MHz designs, consider Infineon's OptiMOS™ P-channel series with lower Qg and Coss.

Can IRFR6215PBF be used in linear regulator applications?

Yes, but with strict thermal limits. Its RDS(on) variation over temperature (Fig. 4) and SOA curve (Fig. 8) permit linear operation only below 110 W dissipation and with active heatsinking. Continuous linear use requires junction temperature monitoring and derating to ≤80°C for long-term reliability.

What is the maximum recommended PCB copper area for thermal performance?

For RθJA = 50 °C/W, the datasheet specifies a 1" × 1" (25.4 mm × 25.4 mm) FR-4 PCB with 2 oz copper. Increasing copper area beyond this yields diminishing returns; adding internal ground planes or thermal vias beneath the drain pad improves RθJA by ≤15%, but does not replace mechanical heatsinking for >5 W continuous dissipation.

Does IRFR6215PBF require a gate resistor for stability?

Yes. A 6.8 Ω gate resistor is specified in the datasheet for switching time measurements (td(off) = 53 ns). This value damps gate oscillation and controls dv/dt-induced shoot-through in bridge configurations. Lower values increase switching speed but risk ringing; higher values slow turn-off and raise switching losses disproportionately.