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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR6215TR

Name: IRFR6215TR
Brand: Infineon Technologies
SKU: IRFR6215TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR6215TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR6215TR.pdf

Description:: MOSFET P-CH 150V 13A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR6215TR from Infineon Technologies (formerly International Rectifier) is a P-channel surface-mount HEXFET® Power MOSFET with -150V V_BRDSS, 0.295Ω R_DS(on) at -10V V_GS, and -13A continuous drain current at T_C = 25°C. It operates from -55°C to +175°C and is fully avalanche rated for robust unclamped inductive switching in DC-DC converters, motor control H-bridges, and load switch applications.

For engineers reviewing the IRFR6215TR datasheet, IRFR6215TR pinout, IRFR6215TR application, or IRFR6215TR equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0V), low gate charge (66nC total), fast switching (t_r = 36ns, t_f = 37ns), and D-PAK (TO-252AA) thermal performance (R_θJC = 1.4°C/W).

Technical Context

This P-channel MOSFET uses fifth-generation HEXFET processing to minimize on-resistance per die area while maintaining rugged avalanche capability (E_AS = 310mJ). Its body diode exhibits V_SD = -1.6V at -6.6A and t_rr = 160–240ns, enabling efficient synchronous rectification and reverse recovery in bidirectional power paths.

The device is optimized for surface-mount assembly using vapor-phase or infrared reflow. Its D-PAK package provides low-inductance source/drain leads (L_S = 7.5nH, L_D = 4.5nH) and supports up to 110W power dissipation at T_C = 25°C with linear derating of 0.71W/°C above that temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	-150V - Withstands 150V reverse drain-source voltage before breakdown, suitable for 100V bus systems with margin.
R_DS(on)	0.295Ω @ V_GS = -10V, I_D = -6.6A - Low conduction loss enables <1W dissipation at 5A, critical for thermally constrained PCBs.
Q_g	66nC - Total gate charge determines driver strength requirement; compatible with standard logic-level gate drivers.
t_r/t_f	36ns/37ns - Fast edge rates reduce switching losses in high-frequency (>100kHz) SMPS designs.
E_AS	310mJ - Single-pulse avalanche energy rating ensures reliability during transient overvoltage events in inductive loads.
R_θJC	1.4°C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper pour or external clip.
V_GS(th)	-2.0 to -4.0V - Negative threshold allows direct interface with 3.3V/5V microcontroller GPIO without level-shifting.

Pinout & Package

IRFR6215TR is housed in a TO-252AA (D-PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.7 × 6.35 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	High-impedance input requiring <100nA leakage; driven by logic-level voltage to modulate channel conductivity.
2 - Drain	Main current output terminal	Internally connected to exposed metal tab; must be routed to high-current net and thermally coupled to PCB copper.
3 - Source	Main current return path	Reference node for gate drive; connects to system ground or floating rail depending on topology (e.g., high-side switch).
4 - Drain (Tab)	Secondary drain connection	Electrically and thermally identical to Pin 2; soldered directly to PCB thermal pad for optimal heat transfer and low-inductance path.

Key Features

Feature	Design Value
Fully avalanche rated	310mJ single-pulse E_AS enables reliable operation under unclamped inductive switching without external snubbers.
Low R_DS(on) at logic-level drive	0.295Ω at V_GS = -10V reduces conduction loss in battery-powered and energy-efficient systems.
Fast switching with low Q_g	66nC total gate charge and 36ns rise time support >500kHz PWM frequencies with minimal driver overhead.
High-temperature operation	Junction range of -55°C to +175°C supports under-hood automotive, industrial motor drives, and enclosed power supplies.
Optimized D-PAK layout	Low internal source/drain inductance (L_S = 7.5nH, L_D = 4.5nH) minimizes voltage overshoot during hard switching.

Applications

Motor Control H-Bridge

Industrial Load Switch

Use Scenario: Bidirectional 24–48V DC motor control in automated valves and robotic actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch in half-bridge configuration, commutated at 20kHz with dead-time control.

Use Value: Avalanche rating absorbs back-EMF spikes; low R_DS(on) limits heat buildup during stall conditions.

Use Scenario: Remote-controlled 12–48V DC load enable/disable in PLC I/O modules and power distribution units.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, controlled by isolated 3.3V microcontroller outputs.

Use Value: -4.0V V_GS(th) ensures full enhancement with 3.3V logic; TO-252 footprint simplifies PCB layout and thermal management.

DC-DC Synchronous Rectifier

Battery Protection Circuit

Use Scenario: Secondary-side synchronous rectification in isolated 12V–48V output flyback or forward converters.

IC Role / Device Role / Timing Role: P-channel rectifier replacing Schottky diode, driven by transformer-coupled or active gate control.

Use Value: V_SD = -1.6V and t_rr = 160ns reduce forward drop and recovery loss versus discrete diodes.

Use Scenario: Reverse-polarity and overcurrent protection in 12V/24V lead-acid and LiFePO₄ battery systems.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configuration for bidirectional blocking and fast fault shutdown.

Use Value: -150V V_BRDSS withstands load dump transients; 175°C max junction temperature supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR6217TR	R_DS(on) = 0.18Ω @ -10V (lower), ID = -17A (higher), same package and voltage rating	Better efficiency at >8A loads; higher gate charge (85nC) increases driver demand	Select when lower conduction loss is prioritized over gate drive simplicity and cost.
STP12PF06	R_DS(on) = 0.32Ω @ -10V, V_BRDSS = -60V (lower), TO-220 package (through-hole)	Not voltage-compatible for 100V+ systems; requires through-hole assembly and heatsink mounting	Choose only for legacy through-hole designs where -60V rating suffices and thermal mass outweighs surface-mount advantages.

Compared with IRFR6215TR, IRFR6217TR delivers lower R_DS(on) at the cost of higher Q_g and price, while STP12PF06 trades voltage rating and package format for broader availability in older designs-neither is a drop-in replacement without circuit review.

Availability

IRFR6215TR is available at Aetrix Electronics and suitable for motor control H-bridges, industrial load switches, DC-DC synchronous rectifiers, and battery protection circuits requiring stable component supply across extended production lifecycles.

Supply support for IRFR6215TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial, automotive, and computing applications-emphasizing ruggedness, thermal performance, and ease of integration in compact layouts.

FAQ

What is the maximum continuous drain current for IRFR6215TR at 100°C case temperature?

The maximum continuous drain current is -9.0A at T_C = 100°C and V_GS = -10V. This derating reflects thermal limitations of the TO-252AA package; actual usable current depends on PCB copper area, ambient temperature, and airflow. At 175°C junction temperature, the device remains within safe operating area up to 4A with proper heatsinking.

Can IRFR6215TR be used as a high-side switch with 3.3V logic control?

Yes-its gate threshold voltage range of -2.0V to -4.0V ensures full enhancement with 3.3V logic when referenced to source. However, because it is P-channel, the gate must be pulled *below* the source voltage to turn on; a dedicated high-side driver or level-shifter is required if the source is not at system ground. Direct 3.3V GPIO drive is viable only in low-side or source-grounded configurations.

Does IRFR6215TR include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic p-n junction body diode with V_SD = -1.6V at -6.6A and T_J = 25°C, reverse recovery time t_rr = 160–240ns, and Q_rr = 1.2–1.7µC. These values are measured with di/dt = 100A/µs and confirm suitability for synchronous rectification and freewheeling in buck or half-bridge topologies without external diode supplementation.

What is the recommended PCB footprint and soldering profile for IRFR6215TR's TO-252AA package?

The official IRF footprint (AN-994) specifies a 12mm² exposed drain pad with thermal vias to inner ground planes, 0.5mm solder mask defined pads, and gull-wing lead spacing matching JEDEC TO-252AA. Reflow profile must peak at 245°C for ≤60 seconds; wave soldering is not recommended due to thermal stress on the plastic body and internal wire bonds.

IRFR6215TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR6215TR FAQ

1.How can I place an order for IRFR6215TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR6215TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR6215TR reliable?

The price and inventory of IRFR6215TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR6215TR is usually 5 days.

3.What payment methods are accepted for IRFR6215TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR6215TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR6215TR?

IRFR6215TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR6215TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR6215TR?

For technical support, including IRFR6215TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR6215TR requirements.

6.How does Aetrix verify that IRFR6215TR is sourced from the original manufacturer or authorized distributors?

All IRFR6215TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR6215TR meets industry standards.

7.What is the process for return or replacement of IRFR6215TR?

All IRFR6215TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR6215TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR6215TR part is unused and in its original packaging.

Return procedure for IRFR6215TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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