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Infineon Technologies IRFR6215TRL
- Part No.:
- IRFR6215TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR6215TRL.pdf
- Description:
- MOSFET P-CH 150V 13A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,156
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Product details
Overview
IRFR6215TRL from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-252AA (D-Pak) surface-mount package, rated for -150V VDS, 0.295Ω RDS(on) at VGS = -10V and -6.6A, and fully avalanche-rated with 310mJ single-pulse EAS. It serves as a high-voltage, medium-current switching element in DC-DC converters, motor control H-bridge high-side switches, and industrial power supplies.
For engineers reviewing the IRFR6215TRL datasheet, IRFR6215TRL pinout, IRFR6215TRL application, or IRFR6215TRL equivalent, key selection criteria include its negative threshold voltage (-2.0 to -4.0V), low gate charge (66nC total), fast switching (tr = 36ns, tf = 37ns), rugged unclamped inductive switching capability, and thermal resistance of 1.4°C/W junction-to-case.
Technical Context
This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its fifth-generation HEXFET process delivers optimized on-resistance vs. die size and supports stable operation up to TJ = +175°C with guaranteed avalanche performance under inductive load conditions.
The integrated body diode exhibits VSD = -1.6V at -6.6A and TJ = 25°C, with trr = 160–240ns and Qrr = 1.2–1.7µC under specified di/dt and temperature conditions - enabling use in synchronous rectification and freewheeling paths where controlled reverse recovery is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -150V - Maximum drain-source blocking voltage; defines upper limit for high-side switch placement in ≤150V bus systems. |
| RDS(on) | 0.295Ω @ VGS = -10V, ID = -6.6A - Determines conduction loss (Pcond ≈ I² × R) in steady-state power stages. |
| Qg | 66nC - Total gate charge; directly impacts driver power requirement and switching speed when driven by fixed-VGS sources. |
| EAS | 310mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients without external snubbers. |
| RθJC | 1.4°C/W - Junction-to-case thermal resistance; sets minimum heatsink interface requirement for 110W continuous dissipation at TC = 25°C. |
| tr/tf | 36ns/37ns - Rise/fall times at VDD = -75V, ID = -6.6A, RG = 6.8Ω; constrains minimum practical PWM frequency and EMI profile. |
Pinout & Package
IRFR6215TRL uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package supports vapor-phase, infrared, and wave soldering per AN-994 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives negative voltage relative to source to turn on; threshold range -2.0V to -4.0V ensures compatibility with standard logic-level drivers. |
| 2 (Drain) | High-side power output | Connected to exposed metal tab; electrically and thermally tied to PCB copper pour for heat dissipation and current return path. |
| 3 (Source) | Reference node | Serves as common return for gate drive and load current; defines local ground reference for gate control circuitry. |
| 4 (Drain) | Redundant drain connection | Second drain terminal improves current sharing and reduces package inductance; must be connected to same net as Pin 2. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche-rated | 310mJ single-pulse EAS allows safe operation under unclamped inductive switching without external protection components. |
| Low RDS(on) at high VDS | 0.295Ω at -150V rating enables efficient medium-power switching where N-channel alternatives require level-shifting circuitry. |
| Fast switching with low Qg | 66nC total gate charge and 36ns rise time support >100kHz PWM in hard-switched topologies with minimal driver overhead. |
| High-temperature operation | Rated for continuous operation up to +175°C junction temperature, supporting compact designs in thermally constrained industrial enclosures. |
Applications
| Industrial Motor Control | DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Driving brushed DC motors in PLC-controlled factory automation systems with bidirectional H-bridge topology. IC Role / Device Role / Timing Role: P-channel high-side switch enabling simplified gate drive and elimination of bootstrap circuitry in half-bridge configurations. Use Value: Avalanche rating absorbs inductive kickback during PWM commutation; RDS(on) limits conduction loss at 13A peak currents. | Use Scenario: Step-down (buck) converter in 48V input telecom power supply delivering regulated 12V/5A output. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250kHz with controlled dv/dt (5.0V/ns) to minimize EMI. Use Value: Low Qg and fast tr/tf reduce switching losses; TO-252 thermal performance sustains 110W dissipation with minimal heatsinking. |
| Overvoltage Protection Circuit | Hot-Swap Controller Backplane Switch |
Use Scenario: Reverse-polarity and overvoltage protection in 24V industrial sensor node power inputs. IC Role / Device Role / Timing Role: Series pass element controlled by external comparator and gate driver to disconnect load during fault events. Use Value: -150V VDS provides 3× margin over 24V nominal; low leakage (<25µA) prevents false triggering during standby. | Use Scenario: Inrush current limiting and fault isolation in modular server backplane power distribution units. IC Role / Device Role / Timing Role: Main power switch activated after soft-start sequencing; handles repeated hot-plug events with controlled turn-on. Use Value: Body diode forward voltage (-1.6V) enables bidirectional current flow during insertion; avalanche robustness survives repeated 44A pulsed faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR6216PBF | VDS = -150V, RDS(on) = 0.22Ω @ -10V, Qg = 78nC - lower on-resistance but higher gate charge. | Better conduction efficiency at <10A, but requires stronger gate driver for same switching speed. | Select when minimizing I²R loss dominates over driver complexity and switching loss. |
| STP14PF55 | VDS = -55V, RDS(on) = 0.12Ω @ -10V, Qg = 45nC - lower voltage rating, lower RDS(on), lower Qg. | Not suitable for ≥100V bus applications; limited to 48V systems with tighter thermal budgets. | Choose only for cost-sensitive 24–48V designs where -150V rating is unnecessary. |
Compared with IRFR6216PBF and STP14PF55, IRFR6215TRL offers the optimal balance of high-voltage capability, moderate RDS(on), and manageable gate drive demand - making it uniquely suited for 100–150V industrial switching where both avalanche safety and thermal efficiency matter.
Availability
IRFR6215TRL is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter high-side switching, and overvoltage protection circuits requiring stable component supply across multi-year production cycles.
Supply support for IRFR6215TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to develop, manufacture, and support its HEXFET® Power MOSFET portfolio with emphasis on reliability, ruggedness, and application-specific optimization.
The HEXFET® product line targets high-efficiency power conversion in industrial, automotive, and computing applications, with fifth-generation devices like IRFR6215TRL engineered specifically for robust unclamped inductive switching and high-temperature operation.
FAQ
Is IRFR6215TRL suitable for synchronous rectification in buck converters?
Yes - its body diode has VSD = -1.6V at -6.6A and TJ = 25°C, with reverse recovery time trr = 160–240ns and Qrr = 1.2–1.7µC. These parameters enable effective synchronous rectification at ≤300kHz, provided gate drive timing avoids shoot-through and accounts for diode conduction delay.
What is the maximum continuous drain current at 100°C case temperature?
The datasheet specifies -9.0A continuous drain current at TC = 100°C and VGS = -10V. This derating reflects thermal limits of the TO-252AA package; actual usable current depends on PCB copper area, ambient temperature, and airflow - with 1.4°C/W RθJC indicating ~77°C rise per 55W dissipated.
Does IRFR6215TRL require a gate resistor for stability?
A gate resistor (typically 6.8Ω–22Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet's switching time test uses RG = 6.8Ω, and dv/dt testing confirms stable operation up to 5.0V/ns - confirming suitability for hard-switched topologies with proper layout.
Can IRFR6215TRL replace an N-channel MOSFET in high-side configuration without level shifting?
Yes - as a P-channel device, IRFR6215TRL simplifies high-side switching by allowing gate drive referenced directly to the source (i.e., no bootstrap capacitor or high-side driver IC required). However, its RDS(on) is higher than comparable N-channel parts, so conduction loss must be evaluated against system efficiency targets.
IRFR6215TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 295mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR6215TRL FAQ
1.How can I place an order for IRFR6215TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR6215TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR6215TRL reliable?
The price and inventory of IRFR6215TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR6215TRL is usually 5 days.
3.What payment methods are accepted for IRFR6215TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR6215TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR6215TRL?
IRFR6215TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR6215TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR6215TRL?
For technical support, including IRFR6215TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR6215TRL requirements.
6.How does Aetrix verify that IRFR6215TRL is sourced from the original manufacturer or authorized distributors?
All IRFR6215TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR6215TRL meets industry standards.
7.What is the process for return or replacement of IRFR6215TRL?
All IRFR6215TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR6215TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR6215TRL part is unused and in its original packaging.
Return procedure for IRFR6215TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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