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Infineon Technologies IRFR6215TRRPBF

Name: IRFR6215TRRPBF
Brand: Infineon Technologies
SKU: IRFR6215TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR6215TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR6215TRRPBF.pdf

Description:: MOSFET P-CH 150V 13A DPAK

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Product details

Overview

IRFR6215TRRPBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) surface-mount package, rated for -150 V V_BRDSS, 0.295 Ω R_DS(on) at V_GS = -10 V and I_D = -6.6 A, with -13 A continuous drain current at T_C = 25°C. It serves as a high-voltage, medium-current switching element in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRFR6215TRRPBF datasheet, IRFR6215TRRPBF pinout, IRFR6215TRRPBF application, or IRFR6215TRRPBF equivalent, key selection criteria include verified avalanche rating (E_AS = 310 mJ), fast switching (t_r = 36 ns, t_f = 37 ns), body diode recovery (t_rr = 160–240 ns), and thermal resistance (R_θJC = 1.4 °C/W).

Technical Context

This device employs fifth-generation HEXFET process technology to achieve low on-resistance per silicon area while maintaining rugged unclamped inductive switching capability. Its P-channel topology enables high-side switching without level-shifting circuitry in buck regulators and load-switch applications.

The integrated body diode supports synchronous rectification and freewheeling paths, with specified reverse recovery charge (Q_rr = 1.2–1.7 µC) and peak diode recovery dv/dt rating of 5.0 V/ns under defined test conditions (I_SD ≤ -6.6 A, di/dt ≤ -620 A/µs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	-150 V - Withstands up to -150 V drain-to-source voltage before breakdown, enabling use in 100 V-class bus systems with margin.
R_DS(on)	0.295 Ω @ V_GS = -10 V, I_D = -6.6 A - Low conduction loss at nominal operating point; increases to 0.58 Ω at 150°C junction temperature.
I_D (continuous)	-13 A @ T_C = 25°C - Supports sustained 13 A load current with adequate heatsinking at case temperature ≤25°C.
E_AS	310 mJ - Fully rated for single-pulse avalanche energy, allowing reliable operation during inductive turn-off transients without external snubbers.
t_r/t_f	36 ns / 37 ns - Fast switching transitions reduce switching losses in PWM frequencies up to ~500 kHz.
Q_g	66 nC - Total gate charge determines required driver strength; compatible with standard gate drivers delivering ≥1 A peak current.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance enables direct thermal interface to heatsink or PCB copper pour for thermal management.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Standard footprint per Infineon application note AN-994; compatible with vapor-phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives negative gate drive relative to source; threshold voltage -2.0 to -4.0 V ensures stable turn-on with standard logic-level drivers.
D (Drain)	High-side power path	Connected to exposed metal tab; carries full load current and requires thermal anchoring to PCB copper or heatsink.
S (Source)	Reference node	Common return for gate drive and load; internal source inductance (L_S = 7.5 nH) impacts high-speed switching behavior.

Key Features

Feature	Design Value
P-channel configuration	Enables high-side switching without bootstrap circuitry or level shifters in buck and load-switch topologies.
Fully avalanche-rated	Guarantees robustness against inductive kickback in motor drives and relay drivers without external protection.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; marked with "P" in assembly line position per Infineon lot code convention.
Fast body diode	Reverse recovery time (t_rr) of 160–240 ns and Q_rr of 1.2–1.7 µC support efficient freewheeling in synchronous rectifier designs.
Surface-mount D-Pak	Optimized for automated assembly and thermal performance; 1.4 °C/W R_θJC allows >100 W dissipation with proper heatsinking.

Applications

Industrial Motor Control

DC-DC Buck Converters

Use Scenario: Half-bridge high-side switch in 24–48 V brushed DC motor drivers for factory automation.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery; operates in hard-switched PWM mode at 20–100 kHz.

Use Value: Eliminates need for floating gate driver; avalanche rating absorbs back-EMF spikes during abrupt current interruption.

Use Scenario: High-side switch in non-synchronous buck regulator powering FPGA I/O rails from 12 V input.

IC Role / Device Role / Timing Role: Main switching element controlling duty cycle; body diode conducts during low-side interval.

Use Value: Low R_DS(on) reduces conduction loss; fast t_r/t_f minimizes dead-time losses and improves efficiency above 90% at 5 A output.

Hot-Swap Load Switches

Power OR-ing Circuits

Use Scenario: Inrush-limited hot-swap module protecting 48 V telecom backplane from capacitive loading.

IC Role / Device Role / Timing Role: Controlled series pass element with gate slew-rate limiting; configured as linear regulator during startup.

Use Value: -150 V rating provides margin against line transients; R_DS(on) stability over temperature ensures predictable current limiting.

Use Scenario: Redundant 28 V power supply OR-ing diode replacement in avionics subsystems.

IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diode; body diode blocks reverse current until gate is driven.

Use Value: V_SD = -1.6 V at -6.6 A reduces forward drop by >50% vs. discrete diode; Q_rr enables clean reverse recovery during supply switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR6215PbF	Same die, identical specs, tube packaging instead of tape-and-reel; no functional difference.	No change in circuit design or layout; differs only in logistics and assembly compatibility.	Select when manual or semi-automated placement is used; avoids reel-handling requirements.
STP12PF06	Higher R_DS(on) (0.55 Ω), lower V_BRDSS (-60 V), TO-220 package; not avalanche-rated.	Limited to ≤48 V systems; unsuitable for unclamped inductive loads without external clamping.	Acceptable only in low-voltage, low-energy applications where cost outweighs ruggedness and thermal performance.

Compared with IRFR6215PbF, the tape-and-reel variant offers superior SMT line compatibility, while STP12PF06 trades voltage rating, avalanche capability, and thermal performance for lower unit cost in non-demanding 48 V environments.

Availability

IRFR6215TRRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC buck converters, hot-swap load switches, and power OR-ing circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFR6215TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, designed for high-efficiency, high-reliability power switching in industrial, telecom, and computing infrastructure applications.

FAQ

Is IRFR6215TRRPBF pin-compatible with IRFR6215PbF?

Yes - both share identical D-Pak (TO-252AA) pinout (G-D-S), same die, and identical electrical specifications. The only difference is packaging: TRRPBF denotes tape-and-reel (3000 pcs), while PbF indicates tube (75 pcs). No layout or schematic changes are needed when substituting.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies optimal switching performance at V_GS = -10 V. Driving below -4.0 V risks incomplete turn-on due to threshold variation; exceeding -20 V risks gate oxide damage. A -12 V gate drive is commonly used to ensure margin across temperature and process variation.

Can this MOSFET replace an N-channel device in a high-side configuration?

Yes - its P-channel architecture eliminates the need for high-side gate drivers or bootstrap capacitors. However, it requires inverted logic (low = ON) and exhibits higher R_DS(on) than equivalently rated N-channel devices. Use only where simplicity of drive circuitry outweighs conduction loss penalties.

Does IRFR6215TRRPBF require a heatsink in typical applications?

At 13 A continuous current and 0.295 Ω R_DS(on), conduction loss exceeds 50 W - far exceeding the 110 W maximum power dissipation rating. Even with R_θJC = 1.4 °C/W, a heatsink is mandatory for sustained operation. For <1 A average current, PCB copper pour may suffice per AN-994 layout guidelines.

IRFR6215TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR6215TRRPBF FAQ

1.How can I place an order for IRFR6215TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR6215TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR6215TRRPBF reliable?

The price and inventory of IRFR6215TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR6215TRRPBF is usually 5 days.

3.What payment methods are accepted for IRFR6215TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR6215TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR6215TRRPBF?

IRFR6215TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR6215TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR6215TRRPBF?

For technical support, including IRFR6215TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR6215TRRPBF requirements.

6.How does Aetrix verify that IRFR6215TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR6215TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR6215TRRPBF meets industry standards.

7.What is the process for return or replacement of IRFR6215TRRPBF?

All IRFR6215TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR6215TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR6215TRRPBF part is unused and in its original packaging.

Return procedure for IRFR6215TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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