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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR7446PBF

Name: IRFR7446PBF
Brand: Infineon Technologies
SKU: IRFR7446PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR7446PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR7446PBF.pdf

Description:: MOSFET N-CH 40V 56A TO252

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR7446PBF from Infineon Technologies is a 40 V, 56 A (package-limited), 3.0 mΩ typ. N-channel DPAK MOSFET optimized for high-efficiency synchronous rectification and half-bridge switching in DC/DC converters and BLDC motor drives. It features enhanced body diode dV/dt and dI/dt capability, 1.3 V typical body diode forward voltage, and 20 ns reverse recovery time at 56 A.

For engineers reviewing the IRFR7446PBF datasheet, IRFR7446PBF pinout, IRFR7446PBF application, or IRFR7446PBF equivalent, key selection criteria include its 3.9 mΩ max R_DS(on) at 10 V_GS, 170 S forward transconductance, 65 nC total gate charge, and robust unclamped inductive avalanche rating of 98 mJ at T_J = 25°C.

Technical Context

This HEXFET Power MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted source metallization to achieve low on-resistance while maintaining high avalanche ruggedness. Its internal gate resistance is 1.5 Ω, and it supports fast switching with 9.8 ns turn-on delay and 20 ns fall time under standard test conditions (V_DD = 20 V, I_D = 56 A).

The device integrates an intrinsic integral reverse p–n junction body diode rated for 120 A continuous source current and 480 A pulsed current. Its C_{oss eff}(TR) of 680 pF and C_iss of 3150 pF are fully characterized across 0–32 V_DS, enabling accurate loss modeling in resonant and hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-to-source blocking voltage before avalanche onset; enables use in 24 V and 36 V bus systems with margin.
R_DS(on) typ.	3.0 mΩ @ V_GS = 10 V, T_J = 25°C - Delivers <1.8 W conduction loss at 56 A, critical for thermal management in compact converters.
I_D (Package)	56 A @ T_C = 25°C - Limited by bond wire current capacity; defines maximum continuous output in PCB-mounted DPAK applications.
Q_g	65 nC max - Determines gate drive power requirement and influences switching speed in PWM control loops.
E_AS	98 mJ (single-pulse, T_J = 25°C) - Specifies energy-handling capability during unclamped inductive switching events without failure.
V_SD	0.9 V typ. @ I_S = 56 A - Low body diode forward drop reduces freewheeling losses in synchronous rectifier and OR-ing configurations.
trr	20 ns @ I_F = 56 A, dI/dt = 100 A/μs - Fast reverse recovery minimizes commutation loss and EMI in bridge-leg transitions.

Pinout & Package

IRFR7446PBF is housed in a surface-mount DPAK (TO-252AA) package with exposed drain pad for thermal enhancement. The three terminals are arranged in G–D–S order (left-to-right when viewing component side-up with marking facing outward).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 2.2–10 V logic-level gate drive; 1.5 Ω internal resistance shapes gate waveform rise/fall and dampens ringing.
D (Drain)	High-side power terminal	Connected to PCB copper pour for heat dissipation; electrically tied to backside metal tab; carries full load current path.
S (Source)	Reference and return node	Serves as local ground reference for gate drive; internal source inductance (L_S) impacts di/dt-induced voltage spikes during switching.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	4.8 V/ns - Enables reliable operation in high-dV/dt environments such as resonant LLC and phase-shifted full-bridge converters.
Full SOA characterization	Includes 100 μs to DC safe operating area curves up to 175°C - Allows precise derating for continuous linear-mode operation.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 moisture sensitivity level 1 - Supports lead-free reflow without popcorn cracking or delamination.
Low C_{oss eff}(ER)	570 pF - Reduces turn-off energy loss in hard-switched topologies where output capacitance discharge dominates switching loss.
Thermally rugged construction	R_θJC = 1.52 °C/W - Enables >50 W power dissipation with modest heatsinking when mounted on 1"² FR-4 PCB per AN-994 footprint.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24 V DC brushed motors in power tools and automotive accessories.

IC Role / Device Role / Timing Role: Low-side switch in dual-N configuration; handles bidirectional current up to 56 A peak with minimal conduction loss.

Use Value: 3.0 mΩ R_DS(on) reduces I²R heating by >35% vs. legacy 4.5 mΩ alternatives, extending battery runtime and motor life.

Use Scenario: Six-step commutation in 3-phase BLDC inverters for e-bikes and HVAC blowers.

IC Role / Device Role / Timing Role: High-side and low-side switch in each leg; operates at 10–20 kHz PWM with fast 20 ns trr to minimize dead-time loss.

Use Value: 170 S transconductance ensures stable gate drive under varying load, reducing shoot-through risk during transient overload.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switching in isolated 48 V → 12 V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Replaces Schottky diode in forward topology; body diode conducts during dead time, then channel conducts during active period.

Use Value: 0.9 V V_SD and 3.0 mΩ R_DS(on) cut rectifier losses by ~60% versus 0.55 V Schottky, improving efficiency from 92% to 95.3% at full load.

Use Scenario: Redundant 24 V power supply combining in industrial PLC backplanes and medical equipment.

IC Role / Device Role / Timing Role: Unidirectional power path controller; blocks reverse current while passing forward current with minimal voltage drop.

Use Value: 120 A continuous source rating and 480 A pulsed capability support hot-swap insertion without latch-up or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N4F7AG	R_DS(on) = 3.2 mΩ (typ), Q_g = 72 nC, V_DSS = 40 V, DFN5x6 package	Lower R_θJA (35 °C/W vs. 110 °C/W) but no exposed drain pad; requires different layout and thermal interface.	Prefer for space-constrained designs needing higher power density; avoid if existing DPAK footprint must be retained.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 3.3 mΩ (typ), Q_g = 58 nC, V_DSS = 40 V, SO-8FL package	SO-8FL offers lower profile but 30% lower I_D (42 A) and no avalanche rating published.	Choose for ultra-low-height assemblies where avalanche robustness is secondary; verify SOA compliance in inductive loads.

Compared with STL110N4F7AG and NTMFS4C09NT1G, IRFR7446PBF delivers superior avalanche energy rating (98 mJ vs. unspecified), proven DPAK thermal reliability on FR-4, and industry-standard pinout compatibility-making it preferred for industrial motor drives and redundant power where ruggedness and layout continuity are critical.

Availability

IRFR7446PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFR7446PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with over 30 years of MOSFET innovation.

IRFR7446PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in motor control, power conversion, and industrial automation where reliability under repetitive stress is mandatory.

FAQ

What is the maximum continuous drain current for IRFR7446PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 84 A (silicon-limited), but the package-limited rating remains 56 A regardless of case temperature. This reflects the bond wire current limit, not junction thermal constraint. Derating curves in Figure 2 confirm that 56 A is the practical upper bound for sustained operation on standard PCB layouts.

Does IRFR7446PBF support logic-level gate drive?

Yes-its gate threshold voltage (V_GS(th)) ranges from 2.2 V to 3.9 V, and it delivers 56 A drain current at V_GS = 6.0 V per Figure 5. However, full R_DS(on) specification (3.0 mΩ typ.) requires V_GS ≥ 10 V. For robust switching in noisy environments, 10 V drive is recommended to ensure complete enhancement and minimize Miller-induced turn-on risk.

How is the body diode recovery performance validated?

Body diode recovery is characterized per JEDEC standards using unclamped inductive switching (UIS) tests: trr = 20 ns, Q_rr = 13 nC, and I_RRM = 1.8 A at T_J = 25°C with dI/dt = 100 A/μs and V_R = 34 V. These values are measured directly on production lots and documented in Figures 9, 17–19 of the official datasheet.

Can IRFR7446PBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 6) ensures inherent current sharing stability. However, layout symmetry is critical: matched gate trace inductance (<0.5 nH difference), identical source routing, and shared thermal mass are required. Application Note AN-1140 specifies minimum spacing (≥3 mm) and copper balancing techniques to prevent thermal runaway.

IRFR7446PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 56A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 98W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR7446PBF FAQ

1.How can I place an order for IRFR7446PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR7446PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR7446PBF reliable?

The price and inventory of IRFR7446PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR7446PBF is usually 5 days.

3.What payment methods are accepted for IRFR7446PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR7446PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR7446PBF?

IRFR7446PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR7446PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR7446PBF?

For technical support, including IRFR7446PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR7446PBF requirements.

6.How does Aetrix verify that IRFR7446PBF is sourced from the original manufacturer or authorized distributors?

All IRFR7446PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR7446PBF meets industry standards.

7.What is the process for return or replacement of IRFR7446PBF?

All IRFR7446PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR7446PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR7446PBF part is unused and in its original packaging.

Return procedure for IRFR7446PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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