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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR7540PBF

Name: IRFR7540PBF
Brand: Infineon Technologies
SKU: IRFR7540PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR7540PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR7540PBF.pdf

Description:: MOSFET N-CH 60V 90A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR7540PBF from Infineon Technologies is a 60 V, 4.0 mΩ (typ), D-Pak packaged N-channel enhancement-mode Power MOSFET optimized for high-current switching in motor drives and DC/DC converters. It delivers 90 A continuous drain current (package-limited) at 25°C case temperature, supports synchronous rectification and half-bridge topologies, and features enhanced body diode dV/dt capability up to 11 V/ns at 175°C.

For engineers reviewing the IRFR7540PBF datasheet, IRFR7540PBF pinout, IRFR7540PBF application, or IRFR7540PBF equivalent, key selection criteria include R_DS(on) at 6 V gate drive, avalanche energy rating (273 mJ), diode reverse recovery charge (36 nC), and thermal resistance (R_θJC = 1.05 °C/W).

Technical Context

This HEXFET® device uses trench-gate silicon technology with optimized cell pitch and source bonding to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (2.1–3.7 V) enables direct logic-level drive compatibility with 5 V and 3.3 V controllers.

The MOSFET integrates a fast, soft-recovery body diode characterized for 66 A reverse recovery current (I_RRM = 1.9 A) and 34 ns trr at 25°C. Dynamic parameters-including Q_g = 86 nC (typ), Q_gd = 27 nC (typ), and C_oss = 410 pF (typ)-are fully specified for resonant and hard-switching converter design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with margin.
R_DS(on) (typ)	4.0 mΩ @ V_GS = 10 V, I_D = 66 A - Enables <1 W conduction loss at 50 A, critical for high-efficiency motor inverters.
I_D (package-limited)	90 A @ T_C = 25°C - Determined by leadframe thermal capacity; requires PCB copper area ≥1"² for full rating.
E_AS (repetitive)	273 mJ - Energy absorbed during single unclamped inductive switching event; validated at L = 1 mH, I_AS = 23 A.
Q_rr	36 nC @ T_J = 25°C - Low stored charge reduces switching losses in synchronous rectifier operation.
dv/dt (diode)	11 V/ns @ T_J = 175°C - High diode recovery ruggedness prevents false turn-on in high-dV/dt bridge configurations.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing; measured at ~90°C junction temp.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; surface-mount footprint compatible with IPC-7351B standard.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Internally connected to exposed metal pad; must be soldered to large copper pour for thermal management and low-inductance return path.
Gate (G)	Control input for channel modulation	High-impedance MOS gate requiring <2.4 Ω series resistance to damp ringing; sensitive to ESD (±20 V max rating).
Source (S)	Reference node for gate drive and current sensing	Common return for load current and gate driver ground; layout must minimize inductance to avoid shoot-through risk in half-bridge.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	11 V/ns at 175°C - Prevents parasitic turn-on during high-speed bridge commutation without external snubbers.
Fully characterized avalanche SOA	273 mJ repetitive energy rating - Enables reliable operation in unclamped inductive loads like BLDC phase legs.
Low gate charge asymmetry	Q_gd/Q_g = 31% - Reduces Miller-induced delay and improves controllability in high-frequency PWM applications.
Lead-free, RoHS-compliant construction	Meets JEDEC J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without baking requirement.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge control of 24–48 V DC motors in power tools and automotive accessories.

IC Role / Device Role / Timing Role: Low-side switch in dual half-bridge configuration; handles bidirectional current up to 90 A peak.

Use Value: 4.0 mΩ R_DS(on) minimizes I²R heating during stall conditions; 110 A silicon limit supports short-term surge demands.

Use Scenario: Three-phase inverter stage driving permanent magnet BLDC motors in e-bikes and HVAC blowers.

IC Role / Device Role / Timing Role: Upper- and lower-leg switch in 60 V-class inverter; operates at 10–20 kHz PWM frequency.

Use Value: 36 nC Q_rr and soft diode recovery reduce cross-conduction losses and EMI during commutation.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in isolated 48 V → 12 V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement for Schottky diode; driven synchronously with primary-side controller timing.

Use Value: 1.2 V V_SD forward drop at 66 A cuts conduction loss by >50% vs. 40 V Schottky; low C_oss (410 pF) limits capacitive switching loss.

Use Scenario: Redundant 48 V power supply OR-ing in industrial PLC backplanes and data center racks.

IC Role / Device Role / Timing Role: Unidirectional power path switch; conducts only when upstream voltage exceeds downstream by >50 mV.

Use Value: 1.05 °C/W R_θJC allows parallel operation with thermal derating; avalanche rating protects against hot-swap transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N6F7	R_DS(on) = 3.8 mΩ @ 10 V but higher Q_g = 105 nC; TO-263 package with larger footprint.	Better conduction loss but slower switching; less suitable for >100 kHz resonant converters.	Prefer for thermally constrained 48 V battery systems where gate drive strength exceeds 2 A peak.
IXTP110N065T	R_DS(on) = 4.5 mΩ @ 10 V; higher V_GS(th) (3.0–4.5 V); TO-220 package with higher R_θJA.	Limited to lower-frequency (<50 kHz) applications due to slower trr (55 ns) and no dV/dt rating.	Select when through-hole mounting and legacy board compatibility outweigh efficiency goals.

Compared with STL110N6F7 and IXTP110N065T, IRFR7540PBF offers superior diode ruggedness (11 V/ns), lower gate charge (86 nC), and surface-mount D-Pak packaging-making it optimal for compact, high-reliability motor and power conversion designs requiring fast, clean switching.

Availability

IRFR7540PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across industrial and automotive production programs.

Supply support for IRFR7540PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.

This device belongs to the StrongIRFET™ family of high-current HEXFET® MOSFETs, engineered specifically for demanding switching applications in motor control, power supplies, and redundant power architectures.

FAQ

What is the maximum safe operating temperature for IRFR7540PBF?

The device supports continuous operation from –55°C to +175°C junction temperature. Derating begins above 25°C case temperature at 0.95 W/°C, and thermal shutdown occurs if T_J exceeds 175°C. PCB copper area and heatsinking must maintain T_J ≤ 150°C under full 90 A load.

Can IRFR7540PBF be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage range is 2.1–3.7 V, and R_DS(on) is not guaranteed below V_GS = 4.5 V. At 3.3 V, typical R_DS(on) exceeds 12 mΩ, causing excessive conduction loss. A dedicated gate driver (e.g., IRS2007) or level-shifting buffer is required for reliable 10 V gate drive.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 1.2 V at 66 A and t_rr = 34 ns-higher forward drop than 45 V Schottky diodes (~0.55 V) but significantly softer recovery and higher dV/dt immunity (11 V/ns). This makes it preferable in noisy bridge environments where Schottky ringing causes EMI or false triggering.

Is IRFR7540PBF suitable for paralleling multiple devices?

Yes-its positive R_DS(on) temperature coefficient (48 mV/°C) ensures inherent current sharing. However, matched gate drive loop inductance and symmetrical PCB layout are mandatory. Thermal coupling via shared heatsink or copper plane is recommended to maintain ΔT_J < 10°C between units.

IRFR7540PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR7540PBF FAQ

1.How can I place an order for IRFR7540PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR7540PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR7540PBF reliable?

The price and inventory of IRFR7540PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR7540PBF is usually 5 days.

3.What payment methods are accepted for IRFR7540PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR7540PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR7540PBF?

IRFR7540PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR7540PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR7540PBF?

For technical support, including IRFR7540PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR7540PBF requirements.

6.How does Aetrix verify that IRFR7540PBF is sourced from the original manufacturer or authorized distributors?

All IRFR7540PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR7540PBF meets industry standards.

7.What is the process for return or replacement of IRFR7540PBF?

All IRFR7540PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR7540PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR7540PBF part is unused and in its original packaging.

Return procedure for IRFR7540PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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