Infineon Technologies IRFR7540TRLPBF

Overview

IRFR7540TRLPBF from Infineon Technologies (formerly International Rectifier) is a 60V N-channel D-Pak power MOSFET optimized for high-current switching in motor drives and DC/DC converters. It delivers 4.0 mΩ typical R_DS(on) at V_GS = 10 V, supports 90 A continuous drain current (package-limited), and features enhanced body diode dV/dt capability up to 11 V/ns - enabling robust operation in BLDC motor half-bridge and synchronous rectifier topologies.

For engineers reviewing the IRFR7540TRLPBF datasheet, IRFR7540TRLPBF pinout, IRFR7540TRLPBF application, or IRFR7540TRLPBF equivalent, key selection criteria include its 1.05 °C/W junction-to-case thermal resistance, 86 nC total gate charge, avalanche energy rating of 160 mJ (single-pulse), and RoHS-compliant lead-free construction - all critical for thermally constrained, high-reliability power stage designs.

Technical Context

This MOSFET employs a trench-gated HEXFET® structure with optimized cell pitch and source bonding to achieve low on-resistance while maintaining high avalanche ruggedness. Its gate threshold voltage (2.1–3.7 V) ensures stable turn-on across temperature, and the fully characterized C_iss (4360 pF), C_oss (410 pF), and C_rss (260 pF) support accurate switching loss modeling in hard-switched and resonant topologies.

The device integrates a fast, soft-recovery body diode with t_rr = 34 ns (T_J = 25°C) and Q_rr = 36 nC, enabling efficient freewheeling in bridge configurations without external Schottky supplementation. Its SOA is validated up to 100 µs pulse width at 66 A, supporting unclamped inductive switching per JEDEC JESD24-11.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for low-inductance, high-current PCB mounting and thermal conduction. Standard 3-pin configuration: Drain (tab + Pin 2), Source (Pin 1), Gate (Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PbF, IRFR7540TRLPBF delivers 12% lower conduction loss and 12.5% higher current rating in identical D-Pak layout; versus STL220N6F7, it offers superior thermal performance (1.05 vs. 2.5 °C/W R_θJC) and surface-mount scalability but lacks through-hole mechanical retention.

Availability

IRFR7540TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for IRFR7540TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap power semiconductors.

This device belongs to the StrongIRFET™ HEXFET® family, engineered specifically for high-efficiency, high-reliability power conversion in motor drives, server PSUs, and renewable energy systems where ruggedness and low conduction loss are critical.

FAQ

What is the maximum allowable junction temperature for IRFR7540TRLPBF?

The absolute maximum operating junction temperature is +175°C, as specified in the Absolute Maximum Ratings table. Continuous operation at this temperature requires strict thermal design - including minimum 100 mm² exposed copper area under the drain tab and ≤1.05 °C/W total thermal resistance from junction to ambient - to avoid exceeding TJmax under 90 A load.

Does IRFR7540TRLPBF support gate drive at 5 V logic level?

No - the gate threshold voltage range is 2.1–3.7 V, but R_DS(on) is not guaranteed below V_GS = 6 V. At V_GS = 5 V, R_DS(on) rises to ~5.2 mΩ (typ.), increasing conduction loss by 30%. Full 4.0 mΩ performance requires ≥10 V gate drive, making it incompatible with 5 V-only microcontrollers without level-shifting.

Can IRFR7540TRLPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized to 2.5× at 175°C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance (<5% variation), symmetrical PCB layout, and shared source inductance <10 nH. Derate total current by 15% for 2-device parallel operation per AN-1140 guidelines.

Is the body diode suitable for continuous reverse conduction in synchronous rectification?

Yes - the body diode is rated for 110 A continuous source current (IS) and exhibits soft, low-Q_rr recovery (36 nC). However, sustained reverse conduction above 66 A requires active gate control (e.g., adaptive dead-time adjustment) to prevent thermal runaway, as forward voltage increases to 1.2 V at 66 A and T_J = 25°C.