Infineon Technologies IRFR7546PBF

Overview

IRFR7546PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 56A (package-limited), N-channel D-Pak power MOSFET optimized for high-efficiency switching in motor drives and DC/DC converters. It delivers 6.6 mΩ typical R_DS(on) at V_GS = 10 V, supports 280 A pulsed drain current, and features enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification and half-bridge operation in battery-powered BLDC inverters.

For engineers reviewing the IRFR7546PBF datasheet, IRFR7546PBF pinout, IRFR7546PBF application, or IRFR7546PBF equivalent, key selection criteria include its 1.52 °C/W junction-to-case thermal resistance, 120 mJ single-pulse avalanche energy rating, 26 ns reverse recovery time at 25°C, and validated performance in resonant-mode power supplies and OR-ing circuits requiring fast, rugged switching.

Technical Context

This HEXFET® device uses planar stripe cell technology to achieve low on-resistance with high avalanche ruggedness. Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 5 V logic-level drivers, while the 180 pF Crss and 3020 pF Ciss support high-frequency PWM control up to several hundred kHz.

The integrated body diode exhibits 1.2 V forward voltage at 43 A and 12 V/ns peak recovery dv/dt at 175°C, making it suitable for hard-switched topologies where diode commutation stress is critical. Thermal design is anchored by a D-Pak package with direct die-to-tab thermal path and defined PCB-mounting footprint per AN-994.

Key Specifications

Pinout & Package

The IRFR7546PBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in a single-row configuration with standardized land pattern per AN-994.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL110N6F7 and IXTP56N10P, the IRFR7546PBF uniquely balances D-Pak manufacturability, 60 V/56 A capability, and 120 mJ avalanche robustness-making it optimal for cost-sensitive, high-volume motor drive and OR-ing designs where footprint compatibility and thermal reliability are prioritized over raw current density or voltage headroom.

Availability

IRFR7546PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter phase legs, and OR-ing power switches requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IRFR7546PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with deep expertise in silicon-based power devices.

The IRFR7546PBF belongs to Infineon's StrongIRFET™ family-engineered specifically for high-reliability, high-current switching in industrial motor control, uninterruptible power supplies, and telecom infrastructure where avalanche endurance and body diode robustness are mission-critical.

FAQ

What is the maximum continuous drain current for IRFR7546PBF at 100°C case temperature?

The IRFR7546PBF supports 50 A continuous drain current at T_C = 100°C under V_GS = 10 V bias, as specified in the Absolute Maximum Ratings table. This reflects silicon-limited conduction capability after thermal derating, distinct from the 56 A package-limited rating at 25°C. Operation above this current risks exceeding T_Jmax = 175°C even with adequate heatsinking.

Can IRFR7546PBF be driven directly by a 3.3 V microcontroller GPIO?

No-its gate threshold voltage ranges from 2.1 V to 3.7 V, and full enhancement requires ≥10 V V_GS to achieve rated 6.6 mΩ R_DS(on). At 3.3 V, R_DS(on) exceeds 50 mΩ, causing excessive conduction loss and thermal runaway. A level-shifting gate driver (e.g., TC4427 or MIC4423) is mandatory for logic-level control.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the drain pad is internally connected to the MOSFET's drain terminal and must be soldered to a PCB copper area designated as the high-side power rail or system ground depending on circuit topology. Electrical isolation is not provided; thermal and electrical connectivity are co-designed per AN-994 footprint guidelines.

Does IRFR7546PBF require external gate resistors for stability?

Yes-a series gate resistor (typically 2.7–10 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance and PCB trace inductance. The datasheet specifies switching times (e.g., 36 ns t_d(off)) using R_G = 2.7 Ω; omitting it risks shoot-through, electromagnetic interference, and gate oxide overstress during fast transitions.