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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR7740PBF

Name: IRFR7740PBF
Brand: Infineon Technologies
SKU: IRFR7740PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR7740PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR7740PBF.pdf

Description:: MOSFET N-CH 75V 87A DPAK

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Product details

Overview

IRFR7740PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 87A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 6.0 mΩ typical R_DS(on) at V_GS = 10 V, supports 330 A pulsed drain current, and features enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification in half-bridge topologies.

For engineers reviewing the IRFR7740PBF datasheet, IRFR7740PBF pinout, IRFR7740PBF application, or IRFR7740PBF equivalent, key selection criteria include its 75 V V_DS, 6.0 mΩ R_DS(on), 87 A continuous drain rating at T_C = 25°C, avalanche energy rating of 160 mJ (single-pulse), and suitability for brushed/BLDC motor control and OR-ing power switches.

Technical Context

This HEXFET® device employs planar stripe cell structure with optimized gate oxide and trench-assisted charge coupling to achieve low R_DS(on) while maintaining strong avalanche ruggedness (E_AS = 160 mJ). Its dynamic parameters-Q_g = 84 nC typ., Q_gd = 26 nC, and C_iss = 4430 pF-support fast, controlled switching in hard-switched and resonant-mode topologies up to 100 kHz.

The integrated body diode exhibits t_rr = 35 ns at T_J = 25°C and dv/dt immunity up to 12 V/ns at T_J = 175°C, enabling reliable operation in synchronous rectifier and bidirectional power flow applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage before avalanche onset; enables use in 48 V bus systems with 20% margin.
R_DS(on) typ.	6.0 mΩ at V_GS = 10 V, I_D = 52 A - Delivers ≤3.2 W conduction loss at 87 A, reducing heatsink requirements.
I_D cont.	87 A at T_C = 25°C - Supports high-current motor phase legs and primary-side switches in 500–1000 W DC/DC stages.
E_AS	160 mJ single-pulse - Withstands unclamped inductive switching events in half-bridge configurations without failure.
Q_g	84 nC typ. - Enables efficient gate drive with standard 1–2 A peak drivers; reduces switching loss in PWM frequencies ≤100 kHz.
t_rr	35 ns at T_J = 25°C - Minimizes reverse recovery losses during commutation in synchronous buck and LLC secondary-side rectification.
R_θJC	1.05 °C/W - Allows direct thermal interface to PCB copper or heatsink; supports >100 W continuous dissipation with modest cooling.

Pinout & Package

D-Pak (TO-252) package with exposed drain pad for low-inductance, high-current routing and thermal conduction. Standard 3-pin surface-mount configuration with Gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires ≥10 V for full enhancement; gate resistance R_G = 2.2 Ω typ. limits ringing during fast switching.
D	Drain	Main high-side current path; electrically connected to exposed metal tab; must be routed with low-inductance layout for EMI control.
S	Source	Reference node for gate drive and current sensing; ties to power ground plane; body diode anode is internally connected here.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	12 V/ns at T_J = 175°C - Prevents false turn-on during high-slew-rate commutation in bridge circuits.
Fully characterized avalanche SOA	160 mJ single-pulse, 242 mJ thermally limited - Enables design confidence in unclamped inductive switching without snubbers.
Low gate charge with optimized Q_gd/Q_g ratio	Q_gd = 26 nC / Q_g = 84 nC → 31% - Improves Miller immunity and reduces risk of shoot-through in half-bridge layouts.
RoHS-compliant lead-free construction	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without baking or special handling.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge driver for 24–48 V DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side and high-side switch in dual-phase PWM-controlled bridge; handles 87 A peak stall current.

Use Value: 6.0 mΩ R_DS(on) minimizes I²R heating during high-duty-cycle operation, extending tool runtime and reducing thermal derating.

Use Scenario: Phase-leg switch in 3-phase BLDC inverter for e-bike controllers and HVAC blowers.

IC Role / Device Role / Timing Role: High-current, low-loss switching element in each half-bridge leg; operates at 16–20 kHz PWM frequency.

Use Value: 35 ns reverse recovery time and 12 V/ns diode dv/dt rating suppress shoot-through risk and reduce dead-time penalties.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in isolated 48 V→12 V LLC resonant converter for telecom PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Body diode forward voltage V_SD ≤1.2 V at 52 A enables >97% efficiency at full load, outperforming 40 V Schottky alternatives.

Use Scenario: Redundant 48 V input OR-ing circuit in server power distribution units.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass transistor controlling power path from multiple hot-swap supplies.

Use Value: 7.2 mΩ max R_DS(on) limits voltage drop to <120 mV at 16 A, ensuring tight output regulation and minimal power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N75F7	75 V, 110 A, R_DS(on) = 5.0 mΩ typ., DFN5x6 package, no exposed drain tab	Higher current rating but lower thermal conductivity due to DFN package; unsuitable for high-T_C environments without forced air	Select when board space is constrained and peak current exceeds 87 A, but ensure thermal vias compensate for missing tab.
IXTP75N075T	75 V, 75 A, R_DS(on) = 7.5 mΩ typ., TO-220 package, higher R_θJA (62 °C/W)	Larger footprint and inferior thermal performance; better suited for low-frequency, high-voltage linear regulation	Prefer only when through-hole mounting is required or when gate drive voltage tolerance >12 V is needed (V_GS(th) = 2.0–4.0 V).

Compared with STL110N75F7 and IXTP75N075T, IRFR7740PBF offers the best balance of low R_DS(on), proven avalanche ruggedness, and D-Pak thermal reliability-making it optimal for high-reliability motor drive and OR-ing designs where thermal management and transient robustness are critical.

Availability

IRFR7740PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and redundant OR-ing power switches requiring stable component supply across industrial and embedded production programs.

Supply support for IRFR7740PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the StrongIRFET™ family of high-ruggedness HEXFET® MOSFETs, engineered specifically for demanding motor control, power conversion, and fault-tolerant power switching applications.

FAQ

What is the maximum gate-to-source voltage rating for IRFR7740PBF?

The absolute maximum V_GS rating is ±20 V. Operation above +20 V risks irreversible gate oxide breakdown, while negative gate voltage beyond –20 V may cause parasitic JFET turn-on or threshold shift. Recommended gate drive is 10–15 V for full enhancement with margin against overshoot.

Can IRFR7740PBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature) ensures inherent current sharing. Layout symmetry, matched gate drive impedance, and shared source inductance are essential to avoid imbalance; derate total current by 15% for 2-device parallel operation.

Does IRFR7740PBF require a gate resistor for stability?

A gate resistor (typically 2.2–10 Ω) is mandatory to dampen gate-drain resonance caused by Q_gd and stray inductance. Without it, ringing can exceed V_GS ratings or induce false turn-on. The datasheet specifies R_G = 2.2 Ω as internal gate resistance, but external series resistance remains necessary for layout-dependent control.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the body diode is fully rated for continuous source current up to 87 A (same as I_D) and pulsed current up to 330 A. Its 35 ns t_rr and 12 V/ns dv/dt capability allow reliable operation at 100 kHz switching frequencies without external diode supplementation in properly designed layouts.

IRFR7740PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 126 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR7740PBF FAQ

1.How can I place an order for IRFR7740PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR7740PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR7740PBF reliable?

The price and inventory of IRFR7740PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR7740PBF is usually 5 days.

3.What payment methods are accepted for IRFR7740PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR7740PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR7740PBF?

IRFR7740PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR7740PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR7740PBF?

For technical support, including IRFR7740PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR7740PBF requirements.

6.How does Aetrix verify that IRFR7740PBF is sourced from the original manufacturer or authorized distributors?

All IRFR7740PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR7740PBF meets industry standards.

7.What is the process for return or replacement of IRFR7740PBF?

All IRFR7740PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR7740PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR7740PBF part is unused and in its original packaging.

Return procedure for IRFR7740PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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