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Infineon Technologies IRFR7740TRPBF

Part No.:
IRFR7740TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR7740TRPBF.pdf
Description:
MOSFET N-CH 75V 87A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,617

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Product details

Overview

IRFR7740TRPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 87A N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, featuring 6.0 mΩ typical RDS(on) at VGS = 10 V, 140 W power dissipation, and optimized for high-current synchronous rectification and half-bridge motor drive circuits.

For engineers reviewing the IRFR7740TRPBF datasheet, IRFR7740TRPBF pinout, IRFR7740TRPBF application, or IRFR7740TRPBF equivalent, this device is selected for brushed/BLDC motor drives, OR-ing switches, and resonant-mode DC/DC converters where low conduction loss, robust avalanche capability (242 mJ), and fast body diode recovery (trr = 35 ns @ 25°C) are critical.

Technical Context

This MOSFET employs planar HEXFET® technology with fully characterized avalanche SOA and enhanced body diode dV/dt (12 V/ns) and dI/dt capability. Its gate threshold voltage (2.1–3.7 V) enables reliable 5 V logic-level drive while maintaining noise immunity.

Dynamic parameters include 84 nC total gate charge, 26 nC gate-to-drain charge, and 4430 pF input capacitance - supporting efficient switching in hard-switched topologies up to several hundred kHz, with thermal resistance RθJC = 1.05 °C/W enabling high-power density PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS75 V - Maximum blocking voltage for use in 48 V bus systems and 60 V transient-tolerant designs
RDS(on) typ.6.0 mΩ @ VGS = 10 V, ID = 52 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements
ID continuous87 A @ TC = 25°C - Supports high-current motor phase legs and synchronous rectifiers without parallel devices
EAS242 mJ - Single-pulse avalanche energy rating allows unclamped inductive switching in bridge configurations
trr35 ns @ TJ = 25°C - Fast body diode recovery minimizes commutation loss and ringing in synchronous rectification
Qg84 nC - Gate drive energy requirement compatible with standard gate drivers (e.g., IR2110, UCC27531) at ≤500 kHz
RθJC1.05 °C/W - Junction-to-case thermal resistance supports >100 W dissipation with moderate heatsinking

Pinout & Package

D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount, single-ended lead configuration.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)Main current path output / high-side switch nodeConnected to exposed copper pad - must be soldered to large PCB copper area for thermal management and low-inductance return path
Source (S)Power ground reference / current returnLow-impedance source terminal; ties directly to power ground plane to minimize switching loop inductance
Gate (G)Control input for channel modulationHigh-impedance CMOS-compatible input requiring <100 nA leakage; sensitive to ESD and layout-induced ringing

Key Features

FeatureDesign Value
Enhanced body diode dV/dt capability12 V/ns at TJ = 175°C - Prevents false turn-on during high-speed commutation in half-bridge configurations
Fully characterized avalanche SOA242 mJ single-pulse energy limit - Enables reliable operation in unclamped inductive switching without external snubbers
Lead-free, RoHS-compliant constructionMeets IPC-J-STD-020 moisture sensitivity level 1 - Suitable for standard reflow profiles without baking
Improved dynamic dV/dt ruggednessTested per JEDEC JESD22-A114 - Ensures stable gate bias under rapid drain voltage transients up to 50 V/ns

Applications

Brushed Motor DriveBLDC Motor Phase Leg

Use Scenario: H-bridge driver for cordless power tools operating from 36 V Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled armature current path with 20 kHz switching frequency.

Use Value: 6.0 mΩ RDS(on) limits I²R loss to <1.0 W at 45 A peak, enabling compact thermal design without forced air cooling.

Use Scenario: Upper-leg switch in three-phase BLDC inverter for e-bike controller with 48 V nominal bus.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacement in active freewheeling mode.

Use Value: 35 ns reverse recovery time reduces shoot-through risk and eliminates need for external anti-parallel Schottky diodes.

Synchronous RectifierOR-ing Power Switch

Use Scenario: Secondary-side switch in isolated 48 V → 12 V LLC resonant converter for telecom power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in center-tapped secondary winding.

Use Value: 140 W power rating and 1.05 °C/W RθJC allow >95% efficiency at full load with minimal temperature rise on 2 oz copper.

Use Scenario: Redundant 48 V DC input selector in industrial PLC backplane with dual hot-swap supplies.

IC Role / Device Role / Timing Role: Low-loss OR-ing switch controlling power path selection based on supply health monitoring.

Use Value: 7.2 mΩ max RDS(on) ensures <3.5 mV drop at 50 A, minimizing voltage mismatch between parallel sources.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL110N7F775 V, 110 A, 5.3 mΩ RDS(on), TO-252 package, higher Qg (110 nC)Higher current rating but slower switching due to larger gate chargePreferred when peak current exceeds 87 A and thermal headroom permits higher drive loss
IXTP75N07575 V, 75 A, 7.5 mΩ RDS(on), TO-220 package, lower avalanche energy (120 mJ)Through-hole mounting; reduced avalanche margin and higher RDS(on)Selected only when board space constraints prohibit surface-mount D-Pak or when legacy through-hole assembly is required

Compared with STL110N7F7 and IXTP75N075, IRFR7740TRPBF offers optimal balance of low RDS(on), proven avalanche robustness, and D-Pak thermal performance - making it preferred for high-reliability motor control and synchronous rectification where PCB real estate and thermal management are constrained.

Availability

IRFR7740TRPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across automotive aftermarket, industrial automation, and telecom power systems.

Supply support for IRFR7740TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This device belongs to the StrongIRFET™ family - engineered specifically for high-efficiency, high-reliability power conversion in motor drives, DC/DC converters, and redundant power architectures where ruggedness and low conduction loss are essential.

FAQ

What is the maximum gate-source voltage rating for IRFR7740TRPBF?

The absolute maximum VGS rating is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive range is 5 V to 15 V for logic-level compatibility and safe margin - 10 V provides full enhancement while 5.5 V yields ~11 mΩ RDS(on), sufficient for many 5 V microcontroller-driven applications.

Does IRFR7740TRPBF support 5 V logic-level gate drive?

Yes - its gate threshold voltage (VGS(th)) ranges from 2.1 V to 3.7 V, and RDS(on) is specified down to 6.0 mΩ at VGS = 10 V. At VGS = 5 V, RDS(on) rises to ~11 mΩ, enabling functional switching at reduced current levels (≤35 A) without external level-shifting circuitry.

How is the drain pad electrically and thermally connected in the D-Pak package?

The exposed drain pad occupies the central region of the D-Pak bottom surface and is electrically tied to the Drain terminal. It must be soldered to a large, thermally optimized PCB copper pour (minimum 200 mm², 2 oz copper) to achieve the rated RθJC = 1.05 °C/W and prevent thermal runaway under sustained 87 A conduction.

Is IRFR7740TRPBF suitable for synchronous rectification in a 48 V to 12 V LLC converter?

Yes - its 75 V VDSS, 35 ns trr, and 6.0 mΩ RDS(on) meet key requirements for secondary-side synchronous rectification in 48 V input LLC converters. The device's low Qgd/Qg ratio (26/84 nC) also supports clean zero-voltage switching transitions and minimizes body diode conduction time.

IRFR7740TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
87A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
7.2mOhm @ 52A, 10V
Vgs(th) (Max) @ Id:
3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
126 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4430 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
140W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IRFR7740TRPBF FAQ

1.How can I place an order for IRFR7740TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR7740TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR7740TRPBF reliable?

The price and inventory of IRFR7740TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR7740TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR7740TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR7740TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR7740TRPBF?

IRFR7740TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR7740TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR7740TRPBF?

For technical support, including IRFR7740TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR7740TRPBF requirements.

6.How does Aetrix verify that IRFR7740TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR7740TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR7740TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR7740TRPBF?

All IRFR7740TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR7740TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR7740TRPBF part is unused and in its original packaging.

Return procedure for IRFR7740TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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