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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR7746PBF

Name: IRFR7746PBF
Brand: Infineon Technologies
SKU: IRFR7746PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR7746PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR7746PBF.pdf

Description:: MOSFET N-CH 75V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR7746PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 56A D-Pak N-channel enhancement-mode Power MOSFET optimized for high-efficiency switching in motor drives and DC/DC converters. It delivers 9.5 mΩ typical R_DS(on) at V_GS = 10 V, supports 230 A pulsed drain current, and features enhanced body diode dV/dt capability up to 8.1 V/ns - enabling robust synchronous rectification in half-bridge topologies.

For engineers reviewing the IRFR7746PBF datasheet, IRFR7746PBF pinout, IRFR7746PBF application, or IRFR7746PBF equivalent, key selection criteria include its 1.52 °C/W junction-to-case thermal resistance, avalanche-rated 116 mJ single-pulse energy, and validated performance in BLDC motor gate drive stages with fast 30 ns rise time and 21 ns fall time.

Technical Context

This MOSFET employs a trench-gated HEXFET® structure with optimized cell pitch and source bonding to achieve silicon-limited 59 A continuous current and package-limited 56 A rating. Its gate threshold voltage (2.1–3.7 V) and low 1.6 Ω gate resistance support direct microcontroller-level drive without external buffers.

Dynamic characteristics are fully characterized: 59 nC typical total gate charge, 18 nC gate-to-drain charge, and 3107 pF input capacitance at V_GS = 0 V enable precise timing control in resonant LLC and phase-shifted full-bridge converters operating up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Withstands 75 V drain-source blocking voltage before avalanche onset; suitable for 48 V bus systems with 20 % margin.
R_DS(on) typ.	9.5 mΩ at V_GS = 10 V, I_D = 35 A - Delivers ≤3.5 W conduction loss at 56 A, enabling compact thermal design.
I_D (Package)	56 A continuous - Determined by D-Pak leadframe and solder joint thermal limits; requires ≥1"² FR-4 PCB copper area.
E_AS	116 mJ single-pulse - Enables unclamped inductive switching in motor phase-legs without snubbers.
Q_g typ.	59 nC - Matches standard 3.3 V/5 V logic drivers; enables <1 µs turn-on with 60 mA gate current.
dV/dt rating	8.1 V/ns body diode recovery - Prevents false turn-on during high-speed commutation in BLDC inverters.
R_θJC	1.52 °C/W - Allows 65 °C temperature rise at 99 W dissipation; mandates direct heatsink mounting via tab.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad on bottom side for thermal conduction and mechanical anchoring. Three-terminal surface-mount configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V for full enhancement; max ±20 V rating prevents ESD damage.
D	Drain	Main high-side power terminal; electrically connected to exposed metal tab; must be isolated from heatsink unless referenced to same potential.
S	Source	Power return path and reference for gate drive; bonded to 56 A source leads; ties to low-side switch source in half-bridge.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	8.1 V/ns at T_J = 175 °C - Eliminates need for external anti-parallel diodes in OR-ing and synchronous rectifier designs.
Fully characterized avalanche SOA	116 mJ single-pulse, 160 mJ thermally limited - Permits reliable operation under inductive load dump without derating.
Low Q_gd/Q_g ratio	18/59 nC = 0.305 - Reduces Miller-induced shoot-through risk in high-frequency bridge configurations.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020D reflow profile - Supports lead-free assembly at peak 260 °C for 10 s without parameter shift.
Thermally optimized D-Pak	1.52 °C/W R_θJC - Enables 99 W power dissipation with minimal heatsink volume in space-constrained motor controllers.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge driver for 24–48 V cordless power tools with PWM frequency >20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 56 A peak.

Use Value: 9.5 mΩ R_DS(on) reduces I²R losses by 32 % vs. legacy 14 mΩ MOSFETs, extending battery runtime by 8–12 %.

Use Scenario: Upper-leg switch in three-phase 48 V BLDC inverter for e-bike controller.

IC Role / Device Role / Timing Role: High-side power switch with integrated body diode conducting freewheeling current during dead-time.

Use Value: 8.1 V/ns dV/dt rating prevents parasitic turn-on during high dv/dt commutation, eliminating gate resistor tuning.

Synchronous Rectifier

DC/DC Converter Switch

Use Scenario: Secondary-side switch in 48 V → 12 V isolated LLC resonant converter for telecom power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward voltage drop and conduction loss.

Use Value: Body diode V_SD = 1.2 V at 35 A enables >3 % efficiency gain over 45 V Schottky at full load.

Use Scenario: Primary-side switch in 36–72 V input, 12 V output non-isolated buck converter for industrial PLC I/O module.

IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz with 59 nC gate charge enabling low-loss ZVS transitions.

Use Value: 3107 pF C_iss and 257 pF C_oss support stable operation with 2.7 Ω gate resistor, minimizing EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N7F3AG	75 V, 130 A, 5.5 mΩ R_DS(on), TO-263 package - lower R_DS(on) but larger footprint and higher Q_g (110 nC).	Requires larger PCB area and stronger gate driver; better suited for high-current, low-frequency (<100 kHz) applications.	Select when thermal budget allows larger heatsink and gate drive can deliver >100 mA peak current.
IXTP75N075T	75 V, 75 A, 7.5 mΩ R_DS(on), TO-220 package - through-hole, higher R_θJA (40 °C/W), no RoHS exemption for lead finish.	Not surface-mount compatible; unsuitable for automated assembly; limited to prototyping or low-volume industrial controls.	Choose only for manual assembly environments where D-Pak reflow is unavailable and thermal mass of TO-220 is acceptable.

Compared with STL130N7F3AG and IXTP75N075T, IRFR7746PBF offers optimal balance of D-Pak manufacturability, 59 nC gate charge for 3.3 V MCU compatibility, and 116 mJ avalanche ruggedness - making it preferred for high-volume, space-constrained motor drive modules requiring zero-snubber reliability.

Availability

IRFR7746PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive-grade production cycles and industrial OEM programs.

Supply support for IRFR7746PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This device belongs to the StrongIRFET™ family - engineered specifically for high-reliability, high-current switching in motor control, power conversion, and industrial automation systems demanding rugged avalanche performance and tight parametric consistency.

FAQ

What is the maximum allowable gate-to-source voltage for IRFR7746PBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond this range risks irreversible gate oxide breakdown. For reliable 3.3 V MCU interfacing, a 10 V gate drive is recommended to ensure full enhancement while maintaining 100 % margin against transients. Gate resistors above 10 Ω are advised to dampen ringing during fast switching.

Can IRFR7746PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (53 mV/°C V_BR drift) ensures inherent current sharing. Parallel operation requires matched layout: identical trace lengths, symmetrical gate routing, and shared source Kelvin connection. Derate total current by 15 % to account for thermal coupling between D-Pak units on the same copper plane.

Does IRFR7746PBF require a gate driver IC in 200 kHz DC/DC applications?

A dedicated gate driver is strongly recommended. With 59 nC Q_g, driving directly from a 3.3 V MCU GPIO (typically 20 mA sink/source) would result in >3 µs turn-on delay - causing excessive switching loss. A dual-channel driver like IRS2007PbF provides 2 A peak current, reducing t_on to 30 ns and enabling efficient 200 kHz operation.

Is the exposed drain pad electrically isolated in the D-Pak package?

No - the exposed drain pad is internally connected to the drain terminal and must be electrically isolated from the heatsink using a thermally conductive but electrically insulating pad (e.g., Bergquist Sil-Pad 2000). Failure to isolate causes short-circuit to ground in high-side configurations and violates safety isolation requirements per IEC 62368-1.

IRFR7746PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 11.2mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3107 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 99W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR7746PBF FAQ

1.How can I place an order for IRFR7746PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR7746PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR7746PBF reliable?

The price and inventory of IRFR7746PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR7746PBF is usually 5 days.

3.What payment methods are accepted for IRFR7746PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR7746PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR7746PBF?

IRFR7746PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR7746PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR7746PBF?

For technical support, including IRFR7746PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR7746PBF requirements.

6.How does Aetrix verify that IRFR7746PBF is sourced from the original manufacturer or authorized distributors?

All IRFR7746PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR7746PBF meets industry standards.

7.What is the process for return or replacement of IRFR7746PBF?

All IRFR7746PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR7746PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR7746PBF part is unused and in its original packaging.

Return procedure for IRFR7746PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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