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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR7746TRPBF

Name: IRFR7746TRPBF
Brand: Infineon Technologies
SKU: IRFR7746TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR7746TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR7746TRPBF.pdf

Description:: MOSFET N-CH 75V 56A DPAK

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Product details

Overview

IRFR7746TRPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 56A (package-limited), N-channel D-Pak power MOSFET optimized for high-efficiency switching in half-bridge and synchronous rectifier topologies. It features 9.5 mΩ typical R_DS(on) at V_GS = 10 V, 11.2 mΩ max, 116 mJ single-pulse avalanche energy, and enhanced body diode dV/dt capability up to 8.1 V/ns - deployed in BLDC motor drives and resonant-mode DC/DC converters.

For engineers reviewing the IRFR7746TRPBF datasheet, IRFR7746TRPBF pinout, IRFR7746TRPBF application, or IRFR7746TRPBF equivalent, key selection criteria include its 75V V_DSS, 56A package-limited continuous current, 1.52 °C/W R_θJC, robust 230A pulsed drain rating, and validated performance in OR-ing and redundant power switch configurations.

Technical Context

This N-channel enhancement-mode MOSFET uses planar HEXFET® technology with optimized gate oxide and source bonding for improved dynamic ruggedness. Its fully characterized SOA includes thermally limited avalanche (E_AS = 116 mJ) and validated dI/dt capability (up to 570 A/µs) under unclamped inductive switching.

The device delivers low gate charge (Q_g = 59 nC typ.) and fast switching (t_r = 30 ns, t_f = 21 ns) with C_iss = 3107 pF and C_oss = 257 pF at V_DS = 25 V - enabling high-frequency operation in hard-switched and ZVS/ZCS topologies without compromising dv/dt immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; supports 48V bus systems with 50% safety margin.
R_DS(on) max	11.2 mΩ at V_GS = 10 V, T_J = 25°C - Enables <1.2 W conduction loss at 35 A, critical for thermal management in compact motor drives.
I_D (package)	56 A continuous at T_C = 25°C - Determined by leadframe and bond-wire limits; defines real-world PCB-mount current capacity.
E_AS	116 mJ single-pulse avalanche energy - Validates reliable operation during inductive turn-off transients in half-bridge leg shoot-through events.
Q_g	59 nC typical total gate charge - Reduces driver power demand and enables use of low-cost gate drivers in 100–500 kHz SMPS designs.
dV/dt rating	8.1 V/ns body diode recovery - Prevents false turn-on in high-dv/dt environments like synchronous rectification in LLC converters.
R_θJC	1.52 °C/W junction-to-case - Supports direct heatsink mounting for >90 W dissipation with ≤150°C junction rise above 25°C case temperature.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; optimized for automated reflow assembly on FR-4 PCBs with recommended AN-994 footprint.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal, connected to exposed copper pad	Primary heat path to PCB heatsink; must be soldered to ≥1"² copper area for rated power dissipation.
Source (S)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin-source sensing in precision current monitoring circuits.
Gate (G)	Control electrode for channel modulation	High-impedance input requiring <2.7 Ω series resistance to damp ringing; sensitive to ESD (±20 V rating).

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	8.1 V/ns at T_J = 175°C - Eliminates need for external snubbers in synchronous rectifier applications.
Fully characterized avalanche SOA	116 mJ single-pulse, 160 mJ with 1 mH inductance - Enables robust design without derating for inductive load transients.
Low Q_gd/Q_g ratio	18 nC / 59 nC = 0.305 - Improves Miller immunity and reduces risk of spurious turn-on during high-speed switching.
Lead-free, RoHS-compliant construction	Meets JEDEC J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without pre-bake.
Thermally rugged R_θJC	1.52 °C/W - Allows direct thermal coupling to heatsinks, enabling >99 W operation with 75°C temperature rise.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge control of 24–48V DC motors in power tools and automotive accessories.

IC Role / Device Role / Timing Role: Low-side switching element in PWM-controlled half-bridge legs; handles bidirectional current reversal during commutation.

Use Value: 9.5 mΩ R_DS(on) minimizes I²R losses at 30–50 A peak, extending battery runtime and reducing heatsink size.

Use Scenario: Three-phase inverter stage in 48V e-bike or scooter controllers operating at 15–25 kHz PWM frequency.

IC Role / Device Role / Timing Role: High- and low-side switching device in each phase leg; synchronized with gate drivers for precise 120° commutation.

Use Value: 30 ns rise time and 21 ns fall time enable clean edge transitions, reducing switching losses and EMI generation.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 75W–200W LLC resonant DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement for Schottky diodes; driven synchronously with primary-side switching waveform.

Use Value: 8.1 V/ns body diode dV/dt rating prevents false turn-on during rapid V_DS transitions, ensuring reliable zero-voltage switching.

Use Scenario: Redundant 48V input OR-ing circuit in industrial PLC power supplies with dual hot-swap inputs.

IC Role / Device Role / Timing Role: Unidirectional power path controller; conducts only when V_IN exceeds output rail by >100 mV.

Use Value: 11.2 mΩ R_DS(on) limits forward drop to <630 mV at 56 A, reducing power loss versus discrete diode solutions by >65%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N75F7	75 V V_DSS, 110 A (package), 5.5 mΩ R_DS(on) - lower R_DS(on) but larger D²Pak package and higher Q_g (110 nC).	Requires larger PCB area and stronger gate driver; better suited for high-current, low-frequency (<100 kHz) applications.	Select when conduction loss dominates and thermal mass allows larger footprint; avoid if layout space or driver strength is constrained.
IXTP75N075	75 V V_DSS, 75 A (case), 7.5 mΩ R_DS(on) - TO-220 package, higher R_θJA (62 °C/W), no tape-and-reel option.	Through-hole mounting only; unsuitable for automated SMT lines or high-density layouts.	Choose for prototyping or low-volume through-hole assemblies where manual soldering is acceptable and thermal interface is less critical.

Compared with STL110N75F7 and IXTP75N075, IRFR7746TRPBF offers optimal balance of low-profile D-Pak packaging, moderate gate charge, and proven avalanche ruggedness - making it preferred for space-constrained, high-reliability SMT motor and power supply designs.

Availability

IRFR7746TRPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial and embedded production programs.

Supply support for IRFR7746TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation via its acquisition of International Rectifier.

This device belongs to the StrongIRFET™ family - engineered specifically for high-ruggedness, high-efficiency switching in motor control and power conversion systems demanding reliable avalanche performance and fast dynamic response.

FAQ

What is the maximum continuous drain current for IRFR7746TRPBF at 100°C case temperature?

The maximum continuous drain current is 42 A at T_C = 100°C and V_GS = 10 V, based on silicon-limited conduction and thermal derating per the linear derating factor of 0.66 W/°C. This reflects actual thermal boundary conditions rather than package limits, which govern the 56 A rating at 25°C.

Does IRFR7746TRPBF support gate drive voltages below 10 V?

Yes - R_DS(on) is specified at both V_GS = 10 V (9.5 mΩ typ.) and V_GS = 6.0 V (11.2 mΩ max), confirming usable conduction down to 6 V. However, gate threshold voltage ranges from 2.1 V to 3.7 V, so logic-level drivers must ensure ≥4.5 V to guarantee full enhancement across temperature.

Can IRFR7746TRPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (normalized R_DS(on) increases with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to prevent thermal runaway; maximum pulsed current remains 230 A per device.

Is the body diode suitable for reverse recovery in high-frequency applications?

Yes - the body diode exhibits t_rr = 27 ns at T_J = 25°C and Q_rr = 26 nC, with dV/dt immunity up to 8.1 V/ns at 175°C. These values are fully characterized and validated for synchronous rectification in resonant converters operating up to 500 kHz, provided gate timing avoids cross-conduction.

IRFR7746TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 11.2mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3107 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 99W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IRFR7746TRPBF FAQ

1.How can I place an order for IRFR7746TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR7746TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR7746TRPBF reliable?

The price and inventory of IRFR7746TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR7746TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR7746TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR7746TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR7746TRPBF?

IRFR7746TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR7746TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR7746TRPBF?

For technical support, including IRFR7746TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR7746TRPBF requirements.

6.How does Aetrix verify that IRFR7746TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR7746TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR7746TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR7746TRPBF?

All IRFR7746TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR7746TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR7746TRPBF part is unused and in its original packaging.

Return procedure for IRFR7746TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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