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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR812PBF

Name: IRFR812PBF
Brand: Infineon Technologies
SKU: IRFR812PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR812PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR812PBF.pdf

Description:: MOSFET N-CH 500V 3.6A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR812PBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 500 V V_DS, 1.85 Ω R_DS(on) at V_GS = 10 V, 3.6 A continuous drain current at 25°C, and 75 ns typical reverse recovery time. It integrates a fast-recovery body diode and supports unclamped inductive switching up to 700 mJ single-pulse avalanche energy.

For engineers reviewing the IRFR812PBF datasheet, IRFR812PBF pinout, IRFR812PBF application, or IRFR812PBF equivalent, key selection criteria include breakdown voltage margin for 400 V bus designs, R_DS(on)-limited conduction loss in low-duty-cycle SMPS, body diode recovery performance in flyback snubberless topologies, and thermal resistance (R_θJC = 1.8 °C/W) for PCB-mounted heatsinking.

Technical Context

This device operates as a high-voltage, medium-current switching element in hard-switched DC-DC converters and AC-DC front-end stages. Its 500 V V_(BR)DSS rating with +0.37 V/°C temperature coefficient ensures stable blocking under line surges; R_DS(on) of 1.85 Ω at 10 V gate drive enables efficient operation with standard logic-level gate drivers.

The integrated body diode exhibits 1.2 V forward drop at 3.6 A and 75 ns reverse recovery time at 25°C, supporting quasi-resonant and discontinuous conduction mode (DCM) flyback designs without external diode replacement. Avalanche ruggedness (E_AS = 700 mJ) allows reliable operation under inductive load switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V nominal DC bus with 25% surge margin in industrial power supplies.
R_DS(on)	1.85 Ω typ. @ V_GS = 10 V - Limits conduction loss to ≤24 W at 3.6 A, enabling compact thermal design.
I_D cont.	3.6 A @ T_C = 25°C - Sustains full-load current in 20–30 W offline SMPS with adequate PCB copper area.
t_rr	75 ns typ. @ T_J = 25°C - Reduces switching loss and EMI in 65–100 kHz flyback converters.
Q_g	20 nC - Matches standard 1-A peak gate drivers; enables <100 ns turn-on delay with 17 Ω gate resistor.
E_AS	700 mJ - Withstands single-pulse inductive energy from 93 mH choke at 1.8 A without failure.
R_θJC	1.8 °C/W - Delivers 78 W power dissipation capability when mounted on 1"² FR-4 PCB with thermal pad.

Pinout & Package

IRFR812PBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current, high-voltage switching with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to exposed copper pad; must be soldered to large PCB copper pour for thermal management and low-inductance return path.
Source	Reference node for gate drive and current sensing	Provides low-impedance return for load current and gate driver loop; critical for minimizing shoot-through risk in half-bridge configurations.
Gate	Control input for channel conduction	High-impedance MOS control terminal requiring <100 nA leakage; sensitive to ESD and ringing-requires local RC snubber if driven by long traces.

Key Features

Feature	Design Value
Lead-free (Pb-free) construction	Complies with RoHS Directive 2011/65/EU; qualified to consumer-level lead-free reflow profile (peak 260°C).
Fast-recovery body diode	75 ns t_rr and 135 nC Q_rr enable snubberless operation in DCM flyback converters up to 100 kHz.
Avalanche-rated	Guaranteed single-pulse E_AS = 700 mJ eliminates need for external clamping in relay-driving or solenoid-control circuits.
Low gate charge	20 nC total gate charge reduces driver power consumption and enables use of cost-effective 1-A gate drivers.

Applications

Industrial AC-DC Adapters

LED Driver Flyback Stages

Use Scenario: 24 V/1.5 A offline adapter for PLC I/O modules operating from 85–264 VAC input.

IC Role / Device Role / Timing Role: Primary-side switch in DCM flyback topology; handles 65 kHz switching with zero-voltage switching assist from body diode.

Use Value: 1.85 Ω R_DS(on) limits conduction loss to 10 W at full load, enabling natural-convection cooling on 2-layer PCB.

Use Scenario: Constant-current LED driver for streetlight retrofit (48 V/700 mA output).

IC Role / Device Role / Timing Role: Main switching FET in primary-side regulated flyback; body diode conducts during demagnetization phase.

Use Value: 75 ns t_rr prevents diode-induced voltage spikes >600 V, eliminating need for TVS clamp across drain-source.

DC Motor Control (24–48 V)

Power Factor Correction (PFC) Hold-up Stage

Use Scenario: H-bridge half-bridge leg for brushed DC motor in automated gate operator (24 V, 3 A peak).

IC Role / Device Role / Timing Role: Low-side switch with synchronous body diode freewheeling; gate driven by isolated 10 V logic signal.

Use Value: 1.2 V V_SD at 3.6 A reduces freewheeling loss by 40% vs. discrete Schottky, improving efficiency at 25% duty cycle.

Use Scenario: Hold-up switch in active PFC stage for medical power supply (390 V DC bus, 200 ms hold-up).

IC Role / Device Role / Timing Role: High-side switch controlling bulk capacitor discharge path during AC dropout.

Use Value: 500 V V_DS rating exceeds 390 V bus with margin for ripple and transients; avalanche rating absorbs energy during sudden load dump.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NB50FP	500 V, 1.4 Ω R_DS(on), TO-220FP package, no specified t_rr	Higher conduction efficiency but lacks documented body diode recovery specs; unsuitable for snubberless flyback.	Select only when thermal mass from TO-220FP enables lower junction temperature at same I_D.
FQP5N50C	500 V, 2.2 Ω R_DS(on), TO-220 package, 100 ns t_rr	Higher R_DS(on) increases conduction loss; slower body diode requires external snubber in DCM operation.	Prefer where board space permits TO-220 mounting and gate drive strength supports higher Q_g (25 nC).

Compared with STP5NB50FP and FQP5N50C, IRFR812PBF uniquely balances low R_DS(on), fast body diode recovery, and surface-mount D-Pak packaging-making it optimal for space-constrained, high-frequency flyback and hold-up switch designs where thermal and EMI constraints rule out through-hole alternatives.

Availability

IRFR812PBF is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver flyback stages, DC motor control circuits, and PFC hold-up switch applications requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR812PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFR812PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-voltage, medium-current switching in offline power conversion, motor drives, and industrial control systems.

FAQ

What is the maximum safe operating temperature for IRFR812PBF?

The IRFR812PBF has a maximum junction temperature (T_J) of +150°C and a storage temperature range of −55°C to +150°C. When mounted on a 1"² FR-4 PCB, its R_θJA is 7.8°C/W, limiting ambient temperature to ≤75°C at full 3.6 A load to maintain T_J ≤ 150°C. Derating begins at 0.63 W/°C above 25°C case temperature.

Can IRFR812PBF be used with 5 V logic-level gate drive?

No-IRFR812PBF has a gate threshold voltage (V_GS(th)) of 3.0–5.0 V and requires ≥10 V gate-to-source voltage for full enhancement. At 5 V, R_DS(on) rises significantly (>5 Ω), increasing conduction loss beyond acceptable limits. A dedicated gate driver or level-shifter is required for 3.3 V/5 V MCU interfaces.

Is the body diode in IRFR812PBF suitable for continuous conduction mode (CCM) operation?

The body diode is optimized for fast recovery (75 ns) and low Q_rr (135 nC), making it suitable for discontinuous conduction mode (DCM) and boundary conduction mode (BCM) flyback topologies. In CCM, reverse recovery losses increase significantly; external Schottky or SiC diodes are recommended for sustained CCM operation above 50 kHz.

Does IRFR812PBF have avalanche energy rating under repetitive conditions?

No-only single-pulse avalanche energy (E_AS) is specified (700 mJ). Repetitive avalanche capability (E_AR) is not characterized or guaranteed in the datasheet. For circuits subject to repeated inductive switching stress, derating or external protection (e.g., RCD clamp) is required to avoid cumulative junction damage.

IRFR812PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR812PBF FAQ

1.How can I place an order for IRFR812PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR812PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR812PBF reliable?

The price and inventory of IRFR812PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR812PBF is usually 5 days.

3.What payment methods are accepted for IRFR812PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR812PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR812PBF?

IRFR812PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR812PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR812PBF?

For technical support, including IRFR812PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR812PBF requirements.

6.How does Aetrix verify that IRFR812PBF is sourced from the original manufacturer or authorized distributors?

All IRFR812PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR812PBF meets industry standards.

7.What is the process for return or replacement of IRFR812PBF?

All IRFR812PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR812PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR812PBF part is unused and in its original packaging.

Return procedure for IRFR812PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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